18DBTYP Search Results

FET 2SK125

Abstract: FET 2SK109 2SK109 2SK105 2SK97 2SK104 2sk109a 2SK120 2SK107 2SK124
Contextual Info: - 32 - m. % tt ffl € ÌÉ m & f ;E Y * 1 Ä ^ fë $ P d/Pc h ft K 2S K 8 4 föT LF LN A 2SK85 NEC X-Band LN A/OSC 2 S K 8 7 H HÍZ1 LF LN A 2S K 8 9 B ÎL GaAs/SB m V* (V) *t* (V) * ft (W) (A) N D -5 5 G D O 10 b G 100m N D -1 0 G D O 100m D 500m N D

2SJ83

Abstract: 2SK238 2SJ82 2SK241 2SK240 2SK203 2SK220 2S119 2SK197 2SK198
Contextual Info: - 38 - * . 1 fr K ft f M € tí: € 2SK197 B ÍL B ÍL 2SK198 tñ“ F 2 SK196 H 2SK199 2SK201 NEC 2SK203 NEC 2SK208 m m m £ 4 -k % Vg s * X V* m (V) * (V) 800m 2m 120 0.2 -2 10 10m G 150m -lOn -0.5 2m 14m 10 -0.3 -4 10 LF A J N D -30 GDO 10m G 150m

2SK520

Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id

Contextual Info: \ 200 / 300 MHz Band Chip 0 deg. Splitter I Combiner V_ Model No. STH-24R-1 /- Equivalent Circuits \ Shape & Size < - 0 DO-^ - O V 1.5 Max. •c € '-0 > K—-M A (2 In (Sum port) LTV 05

Contextual Info: < Silicon RF Power MOS FET Discrete > RD02LUS2 RoHS Compliance, Silicon MOSFET Power Transistor 470MHz,2W OUTLINE DRAWING DESCRIPTION RD02LUS2 is a MOS FET type transistor specifically 4.4 +/-0.1 designed for VHF/UHF RF amplifiers applications. T YPE N AM E

TRANSISTOR J 5804

Contextual Info: ^.3 i-SX ;ii Microdevices Product Description SXL-208 Stanford M icrodevices’ SXL-208 am plifier is a high efficiency GaAs Heterojunction Bipolar Transistor HBT MMICs housed in low-cost surface-m ountable plastic package. These HBT M MICs are fabricated using

3SK129

Abstract: 3SK132 3SK141 3SK137 3SK131 3SK143 3SK136 SDG201 3SK133 3SK128
Contextual Info: - 178 - f §¡J £ it € m & m Ä 1 V* + h K V m* I* & * (V) P d/ P c h (A) ft t t S 4* $ 7> * m Ig s s (max) (A) Vg s (V) 3SK127 UHF RF/M1X MOS N DE 15 DS ±8 0 30m D 150m ±50n ±6 3SK12S UHF LN A MOS N DE 15 DS ±8 30m D 200m ±20n ±8 (Ta=25‘

3SK205

Abstract: 3SK241 3SK228 3SK201 3SK220 3SK235 3SK233 3SK203 3SK204 gaas mes
Contextual Info: - 182 - f M £ tí: £ m & m s * K 3SK197 B ÍL 3SK198 m X m Vg s * X 5* V 12 DSX ±10 35m D 150m ±100n ±8 ±6 V* (V) * 3: P d /P c h (A) % S fë i* * (W) Ig s s (max) (A) VHF TV Tuner MOS N DE UHF RF MOS N DE 13.5 DS ±8 30m D 200m ±50 ß Vg s (V)

3SK35

Abstract: 3SK48 3SK51 3SK40 3SK73 3sk74 3SK41 3SK45 3SK78 3SK59
Contextual Info: - 174 - f € sa s tt £ m & ft £ £ ± S fë P d /P c h K T j. 7 H % ft/ V * fr fr (V) (A) * m Ig s s (max) (A) Vg s (V) (min) (A) & tö tt f t (Ta=25<C ) Vpi VP2 (max) V g 2S (max) V g z s (max) (A) (V) (V) (V) (V) (min) (typ) V d s (S) (S) (V) Vg i s

2SK30

Abstract: 2sK30 fet 2SK19TM 2SK34 FET 2SK23A 2SK44SP 2sk43 3A 2SK30 2SK37 2SK33
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . * * (V) «• m të P d /P c h (A) * * (W) Ig s s (max) (A) Vg s (V) ^ te W (Ta=25°C) (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id

3SK97

Abstract: 3SK122 3SK121 3SK125 3SK101 3SK114 3SK87 3SK102 3SK112 3SK113
Contextual Info: - s tí: € ffl iÊ m iS V* II K V Vg s * tt* B ÍL UH F RF MOS N DE 15 DS ±8 B ÍL VHF RF M OS N DE 15 D S ±8 3SK85 B ÍL V H F RF MOS N DE 22 DS ±8 3SK87 NEC U H F RF MOS N DE 20 D S ±10 3SK88 NEC U H F RF MOS N DE 20 D S ±10 A-Sff. C h o p MOS

Contextual Info: 1.6GHz Band Chip 3 way Splitter I Combiner Model No. SLH-160T Equivalent Circuits Shape & Size r h<- 1-6 > r v w _ o- 2 in (Sum port) a @ Out-1 G) — O ® ^ 4 <D 1 € — O ® o> (D — O ® (D Out-2 OX Out-3 © © ( 3 ) None Connection y/ss/A

2SK192

Abstract: 2SK192 fet 2SK160A 2SK185 2sk180 2sk163 nec 2SK191 2sk163 nec 2sk163 2sk183
Contextual Info: - 36 - m f =e M £ 2SK160A tt NEC 2SK161 € ffl m m ftt & V* K V *:ft * LF/VHF A J N D -50 GDO FM/VHF RF J N D -18 GDO A 3: ft -50 0 (V) S fé i* (A) X P d/P c h Ig s s (max) ft (W) (A) Vg s (V) Sa M (min) (max) Vd s (A) (A) (V) 4# (Ta=25°C) 1* (min) (max) V d s

TX-429D

Abstract: SGM2006M ne gJ8 sgm2006 TM100-H TM101 TM200-H TM201-M 12GHz TM100
Contextual Info: - 164 - f M É¡ tt € m & m it ñ V*t* Ì % K SGH5003E 'i z - SGH5602E SGM2004M SGM2006M/P V * GaAsHEMT N D 5 DS LN A GaAsHEMT N D 5 DS UHF LN A GaAs/MES N D 12 DSX UHF LN A GaAs/MES N D 12 DSX * (V) -3. 5 0 98 aa. të I* MW LN A m V- 3È X (A) ft P d/P c h

sth-24

Abstract: 24R2
Contextual Info: 200 / 300 MHz Band Chip 0 deg. Splitter / Combiner Model No. STH-24R-H Equivalent Circuits . N Shape & Size 1.5 Max. l< 1-6 >l DO— • c % ^ (2 In (Sum port) o _ CM CO € (D - O H h - o@ (4) Out-1 (6) Out-2 o unit (mm) V J

2SK68A

Abstract: 2SK44 2SK34 2SK60 2sK30 fet FET 2SK23A 2sk43 2SK30 2SK68 2SK44SP
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m * * (A) ^ m P d /P c h . (V) «• të * * (W) Ig s s (max) (A) Vg s (V) (Ta=25°C) te W (min) (max) Vd s (V) (V) (V) (min) (max) V d s (V) (A) (A) Id (A) Q (min) (S) 1 I >>60 B -—' ü Vd s (V) Id

Contextual Info: y rm Model No. SLF-090EN Shape & Size Equivalent Circuits K > 2 In Sum port a 4 4 Out-1 (GSM) 53 m e ö _ /y Y ////A ^ 6 0ut-2(PCN) 1,3,5 Ground 6 v unit (mm) Specifications (Temporary) Insertion Loss Pass Band Frequency 0.7dB Max. f1 :880-960MHz f2 :1710-1880MHz

Contextual Info: 3001400 MHz Band Chip 0 deg. Splitter ICombiner Model No. STH-38R Equivalent Circuits Shape & Size -o@ DO— Q od j V Specifications Frequency Range(MHz) 320-400 Matching Capacitor 7pF Insertion Loss Isolation Return Loss 1dB Max. 12dB Min. 9.5dB Min.

Contextual Info: 1.6GHz Band Chip 3 way Splitter / Combiner Model No. SLH-160T Shape & Size Equivalent Circuits A D In (Sum port r v w @ Out-1 _ —0 (D Out-2 (D Out-3 ® (D None (D o- ^ Y Y \ _ — o(D La a ^ - —O Connection unit (mm) J V Specifications (Temporary)