11P50 Search Results

Contextual Info: VDSS ID25 Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated Symbol IXTH 11P50 IXTT 11P50 Test Conditions RDS on Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient

Contextual Info: P re lim in a ry data Standard Power MOSFET IX T H IX T H P-Channel Enhancement Mode Avalanche Rated 10P50 11P50 Symbol Test Conditions V DSS T j = 25 °C to 150°C -500 V VDGR Tj = 25 °C to 150°C; RGS = 1 M£2 -500 V Vos V GSM Continuous +20 V Transient

11P50

Abstract: IXTH10P50
Contextual Info: Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS IXTH 10P50 IXTH 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25

11P50

Abstract: TO-247 transistor N 343 AD
Contextual Info: VDSS ID25 Standard Power MOSFET IXTH 11P50 IXTT 11P50 P-Channel Enhancement Mode Avalanche Rated RDS on Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient

Contextual Info: Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS IXTH 10P50 IXTH 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ -500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25

Contextual Info: Standard Power MOSFET VDSS P-Channel Enhancement Mode Avalanche Rated -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

11P50

Contextual Info: Standard Power MOSFET VDSS P-Channel Enhancement Mode Avalanche Rated -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

11P50

Abstract: 10p50 GS 247
Contextual Info: Standard Power MOSFET VDSS P-Channel Enhancement Mode Avalanche Rated -500 V -10 A 0.90 Ω -500 V -11 A 0.75 Ω IXTH/IXTT 10P50 IXTH/IXTT 11P50 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

switching pushpull

Abstract: IXTH10P50
Contextual Info: VDSS Standard Power MOSFET IXTH 10P50 IXTH 11P50 -500 V -500 V RDS on ID25 0.90 Ω -10 A 0.75 Ω -11 A P-Channel Enhancement Mode Avalanche Rated Preliminary data Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C -500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

240AA

Abstract: IXTH7P50 Complementary MOSFETs ixys vmk
Contextual Info: il û n MOSFET Modules N-Channel Enhancement Mode Type V oss max. os «nk 1* VMO VMK VMM C ityp. typ. V max. °«, max. *^hJ8 max. pF pF ns nC K/W 4200 135 600 160 0.8 9200 570 400 450 53000 340 600 2300 Package style ' D max. See outlines on page 35/36 Tc = 25-C

Irfp250 irfp460

Abstract: IXTA3N120 36P10 IRFP450 bridge n503 irfp460 complementary IXTH30N25 IXTH48N15 IXTH12N100Q 16p20
Contextual Info: OD Discrete Power MOSFETs G U Standard N-channel types V DSS min. V p W o n t DS on) TO-247 C“ "^C = 25°C 25°C A a As TO-204 (M) 150 (K) (R) TO-268 SOT-227B (N) ^ -W 60 0.024 IXTH60N10 67 0.025 IXTH67N10 75 75 0.020 0.020 IXTH75N10 48 TO-220 TO-252 (Y)

40n80

Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI
Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18

AVC fans

Abstract: A5007 DC1205SY transistors 13001 DP5-5025 TelTec TC5050B TEL-TEC, TC5050B AVC cooler
Contextual Info: AMD-K6 ® Processor Thermal Solution Design Application Note Publication # 21085 Rev: F Issue Date: May 1998 Amendment/0 This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the

Contextual Info: □ IXYS Preliminary data V DSS Standard Power MOSFET IXTH 7P50 IXTH 8P50 P-Channel Enhancement Mode Avalanche Rated Test Conditions V DSS Tj = 25°C to 150°C -500 V V DGR ^ = 25°C to 150°C; RGS = 1 M£i -500 V Continuous ±20 V Transient ±30 V < o />

IXTN 36N50 C

Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50
Contextual Info: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20

2.54 mm pitch BERG stick

Abstract: concept 2114s STANDARD 2.54 PITCH BERG STICK STANDARD 2.54 PITCH BERG STICK 4 pin connector 2 mm pitch BERG stick 1251SM-02 13002 and 13003 power transistor 50 pin 2x25, 2mm pitch berg connectors PIN 11375-1 OZ 9902
Contextual Info: ND3% BASE1 XXXX5115-0708-1-P 708 TSQ: 3001 CMS: CMS-USM TS host OP: NN COMP: 18-07-11 Hour: 16:45 TS:TS date TS time CONNECTORS & ACCESSORIES Find Datasheets Online SOCKETS – DIP/SIP AMP DIPLOMATE DUAL LEAF DL SIP SOCKETS (CONT.) SIP SOCKETS PHOSPHOR BRONZE WITH TIN PLATING

Contextual Info: IPIXYS v DSS Standard Power MOSFET IXTH10P50 11P50 -500 V -500 V p DS on ^D25 0.90 Q -10 A 0.75 Û -11 A P-Channel Enhancement Mode Avalanche Rated Preliminary data Symbol Test Conditions V„ss Tj =25°Cto150°C -500 V ^ -500 V V DOB Maximum Ratings

11n80

Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80
Contextual Info: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088

switching pushpull

Contextual Info: Standard Power MOSFET IXTH10P50 11P50 VDSS = -500 V lD25 =-10/-11 R d s ,o „ , = 0.90/0.75 Cl P-Channel Enhancement Mode Avalanche Rated Preliminary data Maximum Ratings Symbol Test Conditions ^DSS Tj = 25°C to 150°C -500 V v DGR T, = 25°C to 150°C; RGS = 1 Mi2

21N50

Abstract: 6N80 MOSFET 11N80 PAGE-42 K 15N60 6N80A IXTM21N50 IXTH7P50
Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channell Enhancement-Mode Type V DSS max. t jm = 150° c ► New IXTM 12N50A V 500 IXTM 21N50 IXTM 24N50 *025 □ DS<on C ies typ. C res typ. p PF PF K/W W LL 12 0.4 2800 70 600 120 0.7 180 5b 21 24 0.25 0.23 4200

8n80

Abstract: DS117-12A 36-18N 16go 20N60A 2QN60 62-16N07 DSA117-12 10N60A MCC95-12io1B
Contextual Info: Alphanumerical Index c CS 142-12 io8 CS 142-16 ¡08 CS 23-08 io2 CS 23-12 ¡02 CS 23-16 io2 3S 300-12 io3 2S 300-16 io3 CS 35-08 io4 CS 35-12 io4 CS 35-14 io4 CS 72-12 ¡08 CS 72-16 ¡08 CS 8-08 io2 CS 8-12 io2 CS 8-12 io2 CS1011 -18io1 CS1011-22io1 CS1011-25io1

MOSFET 11N80 Data sheet

Abstract: MOSFET 11N80 6N80 IXTN 36N50 C 11n80 ixys ixtn 79n20 ixys ixtn 36n50 6n90 12n100 IRFP 640
Contextual Info: Standard MOSFET T-Series MegaMOSTMFET Standard MOSFET T-Series Contents VDSS max TO-247 TO-220 IXTP TO-263 (IXTA) TO-264 miniBLOC (IXTN) ID(cont) TC = 25 °C A R DS(on) TC = 25 °C Ω 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250

Mosfet K 135 To3

Abstract: a 1712 mosfet 11P50 ixtm11p50
Contextual Info: IDE D 1 4t.at.Bat. o o o a a s i i I I X Y S CORP _T ~ -3 <?- 2 3 □ IXYS P-CHANNEL MOSFETS 11P50, 45 11P50, 45 MAXIMUM RATINGS IX T H 1 1 P 5 0 ' IX T H 1 1 P if5 Parameter Sym. IX T M 1 1 P 5 0 IX T M 1 1 P ^ 5 Drain-Source Voltage 1

cooler master fan

Abstract: 2410ML-04W-B60 DC1205SY dynaeon PGA socket 478 cooler clip DC1205 DC1205B 50102B AMD Thermal Design Guide HSC002P124
Contextual Info: AMD-K6 ® Processor Thermal Solution Design Application Note Publication # 21085 Rev: G Issue Date: August 1998 Amendment/0 This document contains information on a product under development at Advanced Micro Devices. The information is intended to help you evaluate this product. AMD reserves the