10E1 DIODE Search Results

10e1 diode

Abstract: 10E1 033G
Contextual Info: ｓ DIODE 10E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage

10e1 diode

Abstract: 10E1
Contextual Info: ｓ DIODE 10E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage

10E2 diode

Abstract: 10E8 10e1
Contextual Info: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /100 ~ 8 00 v FEATURES o o o ° o M iniature Size Low Forward Voltage Drop Low Reverse Leakage Current High Surge Capability 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS ' " \ > Type 10E1 10E4 10E2

Contextual Info: SILICON RECTIFIER DIODE 10E1~10E8 i a /100~800 v FEATURES O M iniature Size 27U06 Dia 2.3 .091) o Low Forw ard Voltage D rop o Low Reverse Leakage C urrent o H igh Surge Capability 0.9(.035) DIA 0.7(.027) 27(1.06) ° 52mm Inside Tape Spacing Package Available

cd74ac253

Contextual Info: Technical Data _ CD54/74AC253 CD54/74ACT253 Advance Information 10E1 I0 - II3 - 50 51 210 - Dual 4-Input Multiplexer, 3-State * «1- 5 112- 4 SEL/MUX -1V Type Features: Buffered inputs • Typical propagation delay: 6.3 ns @ Vcc = 5 V, f A = 25° C, CL = 50 pF

10e1 diode

Contextual Info: Type：10E1 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

10E2

Abstract: 10e1 diode 10E1 LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 10E4 10E6 10E8 10E4-10E8 10E2 diode
Contextual Info: SILICON RECTIFIER DIODE ia/100~800 v ioei ~ ioe8 FEATURES o Miniature Size 2 7 U 0 6 D IA 2.3 .091) o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability 0.9(.035) DIA 0.7(.027) ° 52mm Inside Tape Spacing Package Available 27( 1.06)

10 35L DIODE

Abstract: 10e2 equivalent 10E1 10E2 20E1 20E2 TC74VCX16827FT 2a3391
Contextual Info: TO SH IBA _ TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74VCX16827FT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit

Contextual Info: TOSHIBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

Contextual Info: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

10E1

Abstract: 10E2 20E1 20E2 TC74VCX162827FT 10e2 equivalent
Contextual Info: TOSHIBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

Contextual Info: TO SHIBA A D V A N CE INFORM ATION TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tf74UfY1KS77FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

Contextual Info: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

FIT4 diode

Abstract: mosfet LT 438 2SK2250-01 2SK2250-01L
Contextual Info: 2SK2250-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • Hi'jh speed switching • Low on-resistance 2.3*0 2 • Nc secondary breakdown 0.5*0.! ri • Low driving power \± à • Hi jh voltage • V g ; = ± 30V Guarantee

Contextual Info: High-Speed C M O S 3 .3 V 20-Bit Buffer with Output Resistor Q u a l it y S e m ic o n d u c t o r , I n c . QS74LCX162827 PRELIMINARY FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • The QS74LCX162827 is a 20-bit buffer that is ideal

Contextual Info: 3.3V CMOS 16-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS, 5 VOLTTOLERANT I/O DESCRIPTION: FEATURES: - IDT74LVC16541A Typical tsK o (Output Skew) < 250ps ESD > 2000V per M IL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 0.635m m pitch SSOP, 0.50mm pitch TSS O P

Contextual Info: 3.3V CMOS 16-BIT BUFFER/ DRIVER WITH 3-STATE OUT­ PUTS, 5 VOLT TOLERANT I/O, BUS-HOLD DESCRIPTION: FEATURES: - IDT74LVCH16541A This 16-bit buffer/driver is built using advanced dual metal CM O S technology. This high-speed, low power device is a noninverting 16-bit buffer composed of two 8-bit sections with

Contextual Info: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX1 6827FT LOW -VOLTAGE 20-BIT BUS BUFFER W ITH 3.6 V TOLERANT INPUTS A N D OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

Contextual Info: 3.3V CMOS 20-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD FE A T U R E S : - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) - 0.635mm pitch SSOP, 0.50mm pitch TSSOP,

IRIG B generator

Abstract: IRIG B TANS III GPS IRIG B time sync hardware IRIG-b irig b converter NASA36 IRIG am output circuit bc350VXI IRIG amplitude
Contextual Info: bc635VME/bc350VXI Time and Frequency Processor 8500-0019 User’s Guide Rev. D June 2000 This Page Intentionally Left Blank Declaration of Conformity Application of Council Directive s Standard(s) to which Conformity is Declared 89/336/EEC EN 50081-1, EN 50082-1

Contextual Info: 3.3V CMOS 20-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 0.635mm pitch SSOP, 0.50mm pitch TSSOP,

ASM400

Abstract: TSS400-S1 LT 542 seven segment display STR-Z 4567 TSS400 TIMER L555 TRANSISTOR 5101 FG 75-instruction DL12 X24C04
Contextual Info: TSS400ĆS1 Sensor Signal Processor User's Guide SLMU001 December 1993 IMPORTANT NOTICE Texas Instruments Incorporated TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to

Contextual Info: 3.3V CMOS 20-BIT BUFFER/DRIVER WITH 3-STATE OUTPUTS AND BUS-HOLD DESCRIPTION: FEATURES: - 0.5 MICRON CMOS Technology Typical tsK o (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF, R = 0) 0.635mm pitch SSOP, 0.50mm pitch TSSOP,

Contextual Info: High-Speed CMOS 3.3V 20-Bit Buffer with Output Resistor Q uality S emiconductor , I nc . QS74LCX162827 PRELIMINARY FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • The QS74LCX162827 is a 20-bit buffer that is ideal for driving address and data buses. The 3.3V LCXPIus