10E1 DIODE Search Results

10e1 diode

Abstract: 10E1 033G
Contextual Info: ｓ DIODE 10E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage

10e1 diode

Abstract: 10E1
Contextual Info: ｓ DIODE 10E1 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage

10E2 diode

Abstract: 10E8 10e1
Contextual Info: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /100 ~ 8 00 v FEATURES o o o ° o M iniature Size Low Forward Voltage Drop Low Reverse Leakage Current High Surge Capability 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS ' " \ > Type 10E1 10E4 10E2

Contextual Info: SILICON RECTIFIER DIODE 10E1~10E8 i a /100~800 v FEATURES O M iniature Size 27U06 Dia 2.3 .091) o Low Forw ard Voltage D rop o Low Reverse Leakage C urrent o H igh Surge Capability 0.9(.035) DIA 0.7(.027) 27(1.06) ° 52mm Inside Tape Spacing Package Available

cd74ac253

Contextual Info: Technical Data _ CD54/74AC253 CD54/74ACT253 Advance Information 10E1 I0 - II3 - 50 51 210 - Dual 4-Input Multiplexer, 3-State * «1- 5 112- 4 SEL/MUX -1V Type Features: Buffered inputs • Typical propagation delay: 6.3 ns @ Vcc = 5 V, f A = 25° C, CL = 50 pF

10e1 diode

Contextual Info: Type：10E1 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

10E1

Abstract: 10e1 diode
Contextual Info: Type：10E1 DIODE •OUTLINE DRAWING 構造 ：拡散型-整流用シリコンダイオード Construction: Diffusion Type Rectifier Diode 用途 ：一般整流用 Application: For General Use ■最大定格 / Maximum Ratings Rating くり返しピーク逆電圧

10E2

Abstract: 10E1 10E4 10E6 10E8 10E2 diode
Contextual Info: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /10 0 ~ 8 0 0 v « FEATURES ° Miniature Size o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability ° 52mm Inside Tape Spacing Package Available 2.7 .106 DIA 2.3{.091) 0.9(.035) DIA 0.7(.027)

10E2

Abstract: 10e1 diode 10E1 LOW FORWARD VOLTAGE DROP DIODE RECTIFIER 10E4 10E6 10E8 10E4-10E8 10E2 diode
Contextual Info: SILICON RECTIFIER DIODE ia/100~800 v ioei ~ ioe8 FEATURES o Miniature Size 2 7 U 0 6 D IA 2.3 .091) o Low Forward Voltage Drop o Low Reverse Leakage Current o High Surge Capability 0.9(.035) DIA 0.7(.027) ° 52mm Inside Tape Spacing Package Available 27( 1.06)

1N538

Abstract: 1n1085a AMERICAN MICROSEMICONDUCTOR 1N1079 1HV15K 1N1084 Thyr
Contextual Info: American Microsemiconductor manufacturers of Diodes, Transistors, Thyr. 1 of 2 Home Part Number: 1N538 Online Store 1N538 Diodes Silic o n Re c t ifier Transistors Integrated Circuits Optoelectronics

10 35L DIODE

Abstract: 10e1 diode 10E1 10E2 20E1 20E2 TC74VCX162827FT diode 10 35L
Contextual Info: TO SH IBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC T C 7 4 V C X 1 6 2 8 2 7 FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

10 35L DIODE

Abstract: 10e2 equivalent 10E1 10E2 20E1 20E2 TC74VCX16827FT 2a3391
Contextual Info: TO SH IBA _ TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74VCX16827FT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit

Contextual Info: Philips Semiconductors Product specification 20-bit buffer/line driver, non-inverting 3-State 74ABTH16827A FEATURES DESCRIPTION • Multiple Vqc and GND pins minimize switching noise The 74ABT16827A high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high

Contextual Info: TOSHIBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

10E1

Abstract: 10E2 20E1 20E2 TC74VCX162827FT 10e2 equivalent
Contextual Info: TOSHIBA TC74VCX162827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX162827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX162827FT is a high performance CMOS 20bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

motorola diode cross reference

Abstract: replacement UF5402 1m5819 IR 30D1 diode IR 30D1 10DF2 "cross reference" 1n4007 "direct replacement" diode RU4A IR 10D4 1n5818 "direct replacement"
Contextual Info: CROSS REFERENCE Schottky Barrier Diode -Single MOTOROLA IR 1N5817 SANKEN G I 1N5817 AK03 AK04 AK06 AK09 EK03 EK04 EK06 EK09 1N5818 1M5819 MBR150 MBR160 MBR190 MBR1100 MBR330 MBR340 MBR350 MBR360 MBR390 MBR3100 MBRS120LT3 MBRS130LT3 MBRS130T3 MBRS140T3 MBRS190T3

Contextual Info: TO SHIBA A D V A N CE INFORM ATION TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC Tf74UfY1KS77FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

Contextual Info: TOSHIBA TC74VCX16827FT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VCX16827FT LOW-VOLTAGE 20-BIT BUS BUFFER WITH 3.6 V TOLERANT INPUTS AND OUTPUTS The TC74VCX16827FT is a high performance CMOS 20-bit BUS BUFFER. Designed for use in 1.8, 2.5 or 3.3 Volt

FIT4 diode

Abstract: mosfet LT 438 2SK2250-01 2SK2250-01L
Contextual Info: 2SK2250-01L, S FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES • Features Outline Drawings • Hi'jh speed switching • Low on-resistance 2.3*0 2 • Nc secondary breakdown 0.5*0.! ri • Low driving power \± à • Hi jh voltage • V g ; = ± 30V Guarantee

Contextual Info: Philips Semiconductors Product specification 16-bit buffer/line driver 3-State 74ABTH16541 FEATURES DESCRIPTION • Power-up 3-State The 74ABT16541 high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high

H2A-7H

Abstract: 1a8h PU 54 111 X
Contextual Info: ù PERICOM Fast CMOS 3.3V 20-Bit Buffers Product Description: Product Features: • Compatible with LCX and LVT™ families of products • Supports 5V Tolerant Mixed Signal Mode Operation - Input can be 3V or 5V - Output can be 3V or connected to 5V bus

Contextual Info: High-Speed C M O S 3 .3 V 20-Bit Buffer with Output Resistor Q u a l it y S e m ic o n d u c t o r , I n c . QS74LCX162827 PRELIMINARY FEATURES/BENEFITS DESCRIPTION • • • • • • • • • • The QS74LCX162827 is a 20-bit buffer that is ideal

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module MHPM7B30A60B Integrated Power Stage for 3.0 hp Motor Drives This device is not recommended for new designs (This device is replaced by MHPM7A30E60DC3) This module integrates a 3 -p h a s e input rectifier bridge, 3 -phase

1y5 diode

Abstract: S3332
Contextual Info: Philip* Semiconductor« Product specification 18-bit buffer/line driver; non-inverting 3-State „J 74ABTH16825A FEATURES DESCRIPTION • Multiple Vco and GND pins minimize switching noise The74ABT16825A high-performance BiCMOS device combines low static and dynamic power dissipation with high speed and high