10E4 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 10E416 MC100E416 Differential D and Q; VBB available 600 ps Max. Propagation Delay High Frequency Outputs 2 Stages of Gain Extended 100E VEE Range of -4.2V to -5.46V Internal 75k£i Input Pulldown Resistors The MC 10E416/100E416 is a 5-bit differential line receiving device. The 2.0 GHz

Contextual Info: _ _ 10E470 CY100E470 s i CYPRESS ^S W SEMICONDUCTOR . 4K x l E C L Features Functional Description • 4096 x 1—bit organization • High speed/low power tAA —5 ns T h e Cypress CY 10E470 an d CY 100E470 are E C L R A M s designed fo r scratch pad,

Contextual Info: g MOTOROLA Military 10E416 8-Bit Synchronous Binary Up Counter Product Preview MP0 ELECTRICALLY TESTED PER: 10E416 The 10E416 is a high-speed synchronous, presettable, cascadabie 8-bit binary counter. Architecture and operation are the same as the 10H416 in the MECL

35692

Contextual Info: Characteristics: 35693 • Brushes minimize static charge generation and remove electrostatic charges to ground when held by grounded personnel • Dissipative polypropylene black handles are able to remove charges to ground • Resistance of conductive fibers: 10E3 - 10E4 ohms

10E4 diode

Contextual Info: ｓ DIODE 10E4 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1:9 Differential ECL/PECL RAMBus Clock Buffer The 10E411 Is a low skew 1-to-9 differential driver, designed with clock distribution in mind. The M C 10E411's function and perform ance are sim ilar to the popular MC10E111, with the added feature of 1.2V output

Contextual Info: 10E40-230 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 10 Load Current Max. (A)400m P(D) Max. (W) Nom. Supp (V)230 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

FTMS 101B

Contextual Info: Conductive Shielding Grid Tape For applications requiring EMI shielding • Both surfaces low-tribocharging at 50% RH • 1.9 mil 0.0019" , (0.049 mm) total thickness acrylic based adhesive • Conductive grid layer 10E4 to 10E5 ohms at 50% RH • Adhesive copolymer resistivity 1 x 10E9 ohms

10E416

Contextual Info: ^ MOTOROLA Military 10E416 8-Bit Synchronous Binary Up Counter un inni) Product Preview ELECTRICALLY TESTED PER: 10E416 The 10E416 is a high-speed synchronous, presettable, cascadable 8-bit binary counter. Architecture and operation are the same as the 10H416 in the MECL

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quint Differential Line Receiver 10E416 M C100E416 The M C 10E416/100E416 is a 5-bi1 differential line receiving device. The 2.0G H z of bandwidth provided by the high frequency outputs makes the device ideal for buffering o f very high speed oscillators.

Contextual Info: 10E40 Linear ICs ac-to-dc Voltage Converter status Output Voltage Nominal V 10 Load Current Max. (A)400m P(D) Max. (W) Nom. Supp (V)115 Minimum Operating Temp (øC)-20 Maximum Operating Temp (øC)71 Package StyleModule Mounting StyleT Pinout Equivalence CodeN/A

03A25

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad Differential A N D /N A N D The M C 10E404/100E404 is a 4-bit differential AN D/NAN D device. The differential operation of the device makes it ideal for' pulse shaping applications w here duty cycle skew is critical. Special design techniques

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 4-Bit Parallel/Serial Converter M C 10E446 M C 100E446 The MC10E/100E446 is an integrated 4-bit parallel to serial data converter. The device is designed to operate for NRZ data rates of up to 1.3Gb/s. The chip generates a divide by 4 and a divide by 8 clock for both

10E2 diode

Abstract: 10E8 10e1
Contextual Info: SILICON RECTIFIER DIODE ia 1 0 E 1 — 10E8 /100 ~ 8 00 v FEATURES o o o ° o M iniature Size Low Forward Voltage Drop Low Reverse Leakage Current High Surge Capability 52mm Inside Tape Spacing Package Available MAXIMUM RATINGS ' " \ > Type 10E1 10E4 10E2

STM97

Abstract: flooring
Contextual Info: Electrical Properties: Property RTT Resistance: RTG Resistance: Test Method ESD-S7.1 ESD-S7.1 Specifications: Value 10E4 - 10E5 Ohms 10E4 - 10E5 Ohms Thickness: Color:* Texture:* Electrical Properties obtained by testing to industrial standards by an independent testing laboratory @ 10 Volts and 50% relative humidity

10E4 diode

Abstract: 10E4
Contextual Info: ｓ DIODE 10E4 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage

37680

Contextual Info: Description: This foam is suitable for protection of static sensitive devices and assemblies, and cushion packaging. It is non-sloughing, non-contaminating, and non-corrosive. The material will thermoform into simple shapes. Features: • Conductive crosslink polyethylene foam, RTT < 10E4 ohms

47016

Contextual Info: Conductive Shielding Grid Tape For applications requiring EMI shielding • Both surfaces non-tribocharging at 50% RH • 1.9 mil 0.049 mm total thickness acrylic based adhesive • Conductive grid layer 10E4 to 10E5 ohms at 50% RH • Adhesive copolymer resistivity 1 x 10E9 ohms

enec 5e4

Abstract: 10E4 GmBH, marquardt power switch
Contextual Info: SERIES 1881 - SINGLE-POLE ROUND ROCKER SWITCHES  Gold-plated contacts for low voltages  Appliance cut-out with 20 mm  Changeover switch  Painted variants Mechanical life endurance 10E4 Operating force 3N Inrush current capacitive 70 A Contact resistance (new condition)

10E4

Abstract: Ip 80 C 154
Contextual Info: SERIES 1881 - SINGLE-POLE ROUND ROCKER SWITCHES  Gold-plated contacts for low voltages  Appliance cut-out with 20 mm  Changeover switch  Painted variants Mechanical life endurance 10E4 Operating force 3N Inrush current capacitive 70 A Contact resistance (new condition)

flyback

Abstract: Average simulations of FLYBACK converters with SPICE3 UC3845 pspice model SEM-800 dixon flyback smps uc3845 UC3845 spice model SUBCKT XFMR 1 2 3 4. RP 1 2 1MEG voltage controlled pwm generator 0 to 100 pspice model uc3845 isolated smps Spice model xfmr
Contextual Info: Average simulations of FLYBACK converters with SPICE3 Christophe BASSO May 1996 Within the wide family of Switch Mode Power Supplies SMPS , the Flyback converter represents the preferred structure for use in small and medium power applications such as wall

FED-STD-101

Contextual Info: Features • • • • • • Made in America Item No. D SPECIFICATIONS Properties Electrostatic Decay Surface Resistance Surface Resistance, Low R.H. Cut-off High-Voltage Discharge Resistance Static Shielding Charged Device Model CDM Safety Corrosivity

18n5o

Abstract: BA2N15 SGX530 PowerVR SGX530 0x4803 Ps3 MOTHERBOARD CIRCUIT diagram DDR2-800 AM38x 15F4 17 inch lcd monitor
Contextual Info: AM3894 AM3892 www.ti.com SPRS681A – OCTOBER 2010 – REVISED MARCH 2011 AM389x Sitara ARM Microprocessors MPUs Check for Samples: AM3894, AM3892 1 Device Summary 1.1 Features • High-Performance Sitara ARM Microprocessors (MPUs) – ARM® Cortex™-A8 RISC MPU

EL 817 C108

Abstract: HDMI I2C
Contextual Info: AM3874, AM3872, AM3871 www.ti.com SPRS695A – SEPTEMBER 2011 – REVISED MARCH 2012 AM387x Sitara ARM Processors Check for Samples: AM3874, AM3872, AM3871 1 High-Performance System-on-Chip SoC 1.1 Features • High-Performance Sitara™ ARM® Processors