10E6 Search Results

10E6

Contextual Info: ｓ DIODE 10E6 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage

DIODE GOC 24

Abstract: DIODE GOC 15 PM7A 731 zener diode DIODE GOC 23 RECTIFIER DIODES Motorola
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information Hybrid Power Module M H PM 7A 10E60D C 3 Integrated Power Stage for 230 VAC Motor Drive Motorola Preferred Device Th is V e rsaP ow er module integrates a 3 -p h a se inverter, 3 -p h a se rectifier, brake, and temperature se n se in a single

10E8

Contextual Info: A. Material is .018" 0.46mm thick, red static dissipative vinyl. Surface resistance on both sides is 10E6 - 10E8 ohms, per ANSI/ESD S4.1 B. Two ground points, 10mm (.395") female sockets, riveted to material. C. Common point ground cord, with 1 megohm resistor, 15'

66200

Contextual Info: Color Dissipative Top Layer Description: Dual Layer mat is a .060" thick, 2-layer, dissipative dual layer rubber material. It is designed to provide a path to ground and eliminate static charge generation when used as Made in the United States of America a worksurface table mat, shelf liner, and cart liner. The surface resistance 1 x 10E6 < 1

D-3575

Abstract: FED-STD-101 10E8 1021BA D3575-91 D3575
Contextual Info: - Features - • Portable ESD worksurface that can also be used to transport populated, unsoldered circuit boards - • Static dissipative foam RTT 10E6 - 10E8 ohms laminated to Protektive Pak impregnated corrugated material for greater durability

12100

Abstract: NA 36 foam STM11
Contextual Info: Description: Desco’s conductive foam is a non-abrasive, open-cell closed cell in cross linked polyurethane foam compounded for permanent ESD Control Properties. The black conductive foam’s Rtt range of 10E3 to 10E6 allows it to be used with ESD susceptible products. Desco’s conductive foam is available in 3 designs:

10E8

Contextual Info: Description: 0.125" Desco’s Statfree J material is a 0.125" thick, dissipative cellular foam rubber. It is designed to provide a path to ground and eliminate static charge generation when used as a worksurface table mat, shelf liner, and cart liner. The surface resistance 10E6 - 10E8 ohms Rtt meets ANSI/

10E6

Contextual Info: ｓ DIODE 10E6 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Repetitive Peak Reverse Voltage

TLC2425

Abstract: TLE24251
Contextual Info: TLE2425, TLE2425Y PRECISION VIRTUAL GROUNDS SLOSD65B - MARCH 1991 - REVISED AUGUST 1995 Excellent Regulation Characteristics - Output Regulation -4 5 nV Typ at l0 = 0 to -1 0 mA +15 nV Typ at Iq - 0 to +10 mA - Input Regulation = 1.5 ¿iV/V Typ Low-lmpedance Output. . . 0.007512 Tÿp

Contextual Info: MBR0540T1G, NRVB0540T1G, MBR0540T3G, NRVB0540T3G Surface Mount Schottky Power Rectifier SOD−123 Power Surface Mount Package The Schottky Power Rectifier employs the Schottky Barrier principle with a barrier metal that produces optimal forward voltage drop−reverse current tradeoff. Ideally suited for low voltage, high

FED-STD-101

Contextual Info: Features • • • • • • Made in America Item No. D SPECIFICATIONS Properties Electrostatic Decay Surface Resistance Surface Resistance, Low R.H. Cut-off High-Voltage Discharge Resistance Static Shielding Charged Device Model CDM Safety Corrosivity

NRVBS2040LT3G

Abstract: 403A-0 MBRS2040LT3G
Contextual Info: MBRS2040LT3G, NRVBS2040LT3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package http://onsemi.com . . . employing the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation

RC14M30K

Abstract: RM20M12K UTS712D10P32 souriau 841 UTS7142G1P UTS0124P UTS78D4P32 UTS61412S AWG 24 multi strand copper wire UTS6JC147S
Contextual Info: UTS Series Dynamic IP68/69K • UV Resistant • UL/IEC Compliant Overview UTS Series Cable assembly . 14 2 contacts . 20 2 + ground contacts . 28

10E5-10E6

Abstract: FTMS-101C
Contextual Info: Manufacturer of ESD Static Control Products Part Number: 73774 SMOCK, STATSHIELD, JACKET, CUFFS, BLUE, 6XLARGE • RTG < 3.5 x 10E7 ohms meets required limit of ANSI/ESD S20.20-2007 Groundable Static Control Garment System tested per ANSI/ESD STM2.1 and ESD TR53

Contextual Info: MIC2210 Micrel MIC2210 Dual µCap LDO with Open-Drain Driver Final General Description Features The MIC2210 is a dual µCap low dropout regulator with an open-drain driver and power-on reset circuit. The first regulator is capable of sourcing 150mA, while the second regulator can source up to 300mA and includes a power-on reset

Contextual Info: MIC2213 Micrel MIC2213 Sequenced Portable Power Management IC Final General Description Features The MIC2213 is a dual µCap low dropout regulator with an open-drain driver and power-on reset circuit. The first regulator is capable of sourcing 150mA, while the second regulator can source up to 300mA. A power-on reset function

RC SERVO digital CIRCUIT

Abstract: SSI32H116 t418 32H569
Contextual Info: SSI 32H567 siiamMkm Servo Demodulator June, 1989 DESCRIPTION sponse and sync separatorthreshold. Its high perform­ ance analog/digital circuitry is capable of supporting servo frame rates of up to 500 KHz. The SSI 32H567 Servo Demodulator is a bipolar de­

DMP14

Abstract: NJM2777 NJM2777D NJM2777M NJM2777V SSOP14
Contextual Info: NJM2777 電子ボリューム付ヘッドホンアンプ •外形 ■概要 概要 NJM2777は電子ボリューム機能付ヘッドホンアンプICです。ボ リュームによる利得調整範囲は+20dBから-80dBで、ミュート機能 も内蔵しており、DC電圧で制御します。TV等のヘッドフォン出力

LP3883

Abstract: T05D national semiconductor Linear on smps 4.5V to 100V input regulator
Contextual Info: LP3883 3A Fast-Response Ultra Low Dropout Linear Regulators General Description Features The LP3883 is a high-current, fast-response regulator which can maintain output voltage regulation with minimum input to output voltage drop. Fabricated on a CMOS process, the

TLV2272

Abstract: 17PM K011 04V 709 operational amplifier MO-200 TLV2262 TLV2262A TLV2262AID TLV2262AIP TLV2262AIPWLE TLV2262ID
Contextual Info: TLV2262, TLV2262A, TLV2262Y Advanced LinCMOS RAIL-TO-RAIL DUAL OPERATIONAL AMPLIFIERS • • • • Output Swing Includes Both Supply Rails Low N oise. . . 12 nV/VHz Typ at f = 1 kHz Low Input Bias C urrent. . . 1 pA Typ

Contextual Info: TLE2425 PRECISION VIRTUAL GROUND SLOS065D – MARCH 1991 – REVISED APRIL 2002 D D D D 2.5-V Virtual Ground for 5-V/GND Analog Systems High Output-Current Capability Sink or Source . . . 20 mA Typ Micropower Operation . . . 170 µA Typ Excellent Regulation Characteristics

Transistor BC 1078

Abstract: TSS400-S1 LCD tlc 771 TSS400CFN-S1 abe 630 K-Line L line BC 557 PNP TRANSISTOR circuits D4071 digital pressure sensor conditional circuit 44-PIN
Contextual Info: TSS400-S1 uPOWER PROGRAMMABLE HIGH-PRECISION SENSOR SIGNAL PROCESSOR SLMS001 -D 407 1, JANUARY 1993 * Onboard Ratiometric Current Source Programmable From 0.15 mA x SV^d/V to 2.4 mA x (SVDD/V) Two Independent Crystal Controlled Timers (32.768 kHz) Internal MOS Oscillator Serves as System

Dow Corning DC 896

Abstract: iscsi sanyo ccb AA17 AB17 AC16 AD17 MPC8536E MPC8536EEC MPC8536AVT
Contextual Info: Freescale Semiconductor Data Sheet: Product Preview Document Number: MPC8536EEC Rev. 2, 09/2009 MPC8536E PowerQUICC III Integrated Processor Hardware Specifications • High-performance, 32-bit e500 core, scaling up to 1.5 GHz, that implements the Power Architecture™

09813

Contextual Info: 14234 Kit Includes items: 09813 and 09864 For Grounding ESD Mats Key: A. 10mm .395 in. male snap to attach to mat. B. Molded in black thermoplastic elastomer. C. Wire High flex strand copper, 20 gauge, with PVC insulation. 09813 - Wire insulation Color: Black