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TK110E65Z
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Toshiba Electronic Devices & Storage Corporation
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N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOSⅥ |
Datasheet
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TRS10E65H
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Toshiba Electronic Devices & Storage Corporation
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SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L |
Datasheet
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467-5110-E63
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Amphenol Communications Solutions
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VHDM-HSD™, Backplane connectors, Vertical Orientation, Press Fit Termination, 5 Row HSD, 10 positions, left, E-Key, 4.25mm (0.167in), Header. |
PDF
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492-5010-E63
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Amphenol Communications Solutions
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VHDM-HSD™, Backplane connectors, Vertical Orientation, Press Fit Termination, 6 Row HSD, 10 positions, right, E-Key, 4.25mm (0.167in), Header. |
PDF
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495-5010-E62
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Amphenol Communications Solutions
|
VHDM®, Backplane connectors, Vertical Orientation, Press Fit Termination, 8 Row VHDM, 10 positions, right, E-Key, 6.25mm (0.246in), Header. |
PDF
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