0.4 VA Search Results

105 12

Contextual Info: DUAL-IN-LINE SOCKETS Surface Mount, Gull Wing Open Frame Series 110.105 A B C 10 0.5 0.2 0.3 40 110-93-210-41-105 4 6 8 10 14 16 18 20 22 24 28 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0 1.1 1.2 1.4 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.4 0.4 0.4 0.4 0.4 0.4

Contextual Info: DUAL-IN-LINE SOCKETS Surface Mount, Gull Wing Open Frame Series 110.105 A B C 10 0.5 0.2 0.3 40 110-93-210-41-105 4 6 8 10 14 16 18 20 22 24 28 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0 1.1 1.2 1.4 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.4 0.4 0.4 0.4 0.4 0.4

SO-DIMM

Contextual Info: PC133/PC100 µSODIMM M463S0924DT1 8Mx64 SDRAM µSODIMM Revision 0.4 Sept. 2001 Rev. 0.4 Sept. 2001 M463S0924DT1 PC133/PC100 µSODIMM Revision History Revision 0.4 Sept.,2001 Rev. 0.4 Sept. 2001 PC133/PC100 µSODIMM M463S0924DT1 M463S0924CT1 SDRAM µ SODIMM

Contextual Info: DUAL-IN-LINE SOCKETS Surface Mount, Gull Wing Open Frame Series 110.105 A B C 10 0.5 0.2 0.3 40 110-XX-210-41-105000 4 6 8 10 14 16 18 20 22 24 28 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1.0 1.1 1.2 1.4 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.3 0.4 0.4 0.4 0.4 0.4

Contextual Info: 0.4 I F CLK - 4 MHz Va = +3'V or +5V DNL LSB 0.2 0.0 - 0.2 -0.4 64 128 192 OUTPUT CODE 256

Contextual Info: Ordering number : ENN6515 Diffused Junction Silicon Diode SVC224 SVC224 Varactor Diode for VCO Features • • Package Dimensions High capacitance ratio. Best suited for VCO use. unit : mm 1184 [SVC224] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 1 2 2.6 0.7

SVC224

Abstract: 1MHz VCO
Contextual Info: Ordering number : ENN6515 SVC224 Diffused Junction Silicon Diode SVC224 Varactor Diode for VCO Features • • Package Dimensions High capacitance ratio. Best suited for VCO use. unit : mm 1184 [SVC224] 2.2 1.8 3.0 4.0 15.0 0.6 0.4 0.5 0.4 0.4 2 2.6 1 : Anode

EDM240128D

Abstract: 45X127
Contextual Info: 1/128Duty, 1/12 Bias EDM240128D 240Dots x 128 Dots 1. 0 Assembly: SMT Backlight: Optional 2. 0 External Dimensions 45.5 0.45 0.4 0.45 0.4 64.0(V.A.) 16.0 MAX. 14.5 12.0 10.4 4- 3.0 P0.45X127+0.4=57.55 104.0 97.0 79.8 138.0 133.2 125.2 114.0(V.A.) P0.45X239+0.4=107.95

Contextual Info: 125RA Micro-Measurements General Purpose Strain Gages - Rectangular Rosette GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 120 ± 0.2% 350 ± 0.2% 120 ± 0.4% 350 ± 0.4% 120 ± 0.2% 120 ± 0.4% 350 ± 0.4%

MKP63 300

Abstract: mkp63
Contextual Info: MKP63 Code: C43 Y2§H, 300Vac Metallized polypropylene film Interference Suppression capacitor ( Class Y2,300Vac ) • Outline Drawing < > MKP63 300-Y2 104K 40/110/56/B H cTOus c P ± 0.4 w ± 0.4 H ± 0.4 T ± 0.4 ■ Features • • • • Metallized polypropylene structure

transistor 415

Abstract: GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 transistor sr 61
Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat 0.6 0.4 fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54mm 1.8 1.2 9.0 8.2 GEO06645 Chip position Approx. weight 0.2 g 5.9 5.5 0.6 0.4 4.0

GEX06308

Abstract: Q62703-Q517
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) 2.0 1.7 1.8 1.2 3.5 Chip position 4.0 3.6 ø3.1 ø2.9 29 27 4.5 4.0 Cathode 0.6 0.4 GEX06308 fex06308 2.54 mm spacing 3.1 2.5 0.7 0.8 0.4 0.4 Area not flat 0.6 0.4 SFH 487 P Approx. weight 0.3 g

GEO06643

Abstract: Q62702-P76
Contextual Info: Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 33 0.8 0.6 Silizium-Fotodiode Silicon Photodiode 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6 0.4 0 . 5˚ Photosensitive area 2.65 mm x 2.65 mm Approx. weight 0.1 g

Contextual Info: 125TM Micro-Measurements General Purpose Strain Gages - Tee Rosette GAGE PATTERN DATA GAGE DESIGNATION RESISTANCE OHMS OPTIONS AVAILABLE See Note 1, 3 See Note 2 See Note 3 120 ± 0.2% 120 ± 0.4% 350 ± 0.4% 120 ± 0.2% 120 ± 0.4% 350 ± 0.4% EA-XX-125TM-120

Contextual Info: 1/6 order number: J01002A1350 BNC Straight Plug Crimp G13 0.4/2.5 *) crimp/crimp Technical Attributes Z 75 Ω Cable group; cable G13 (0.4/2.5) *); G50 (0.45/2.0-3.4) 2.5C-2V 2YCY 0.4/2.5-3.8 HF 2172 NCX1 391300 0.53/2.45-3.6 0.4/2.5 TELASS 50 02Y(ST)CH 0.45/2.0-3.4

foto transistor

Abstract: phototransistor 600 nm GEX06710 Q62702-P1673 Q62702-P874
Contextual Info: SFH 310 SFH 310 FA 4.8 4.4 1.1 0.9 1.8 1.2 29.0 27.0 3.7 3.5 6.1 5.7 0.6 0.4 Chip position GEX06710 feof6653 Collector/ Cathode 3.4 3.1 ø2.9 ø2.7 2.7 2.1 0.7 0.4 0.8 0.4 2.54 mm spacing 0.6 0.4 Area not flat SFH 310 SFH 310 FA feo06653 Neu: NPN-Silizium-Fototransistor

CEBF630B

Abstract: CEFF630B CEIF630B CEPF630B CEBF630
Contextual Info: CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).

implementation of 3rd order iir filter

Abstract: code iir filter c code iir filter IIR Filter in c iir filter applications optimal IIR multiple notch filter design aCCELEROMETER APPLICATION CIRCUIT c code iir filter design m522
Contextual Info: ColdFire DSP Library Reference Manual, Rev 0.4 ColdFire® DSP Library Reference Manual, Rev 0.4 . 1 1. Introduction. 2

feo06643

Abstract: GEO06643 GEO06863 Q62702-P1602 Q62702-P73 S8050
Contextual Info: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 BPW 34 S feo06643 Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 0.6 0.4 0.8 0.6 0.6 0.4 0.35 0.2 0.5 0.3 0 . 5˚ 5.08 mm

IRFP 450 application

Abstract: IRFP P CHANNEL switching with IRFP450 schematic transistor irfp tr irfp450 IRFP453FI IRFP transistors irfp 150
Contextual Info: r Z Z SGS-THOMSON ^7#» M tM IIL iO T * ! IRFP 450/FI-451/FI IRFP 452/FI-453/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS IRFP450 IRFP450FI 500 V 500 V 0.4 0.4 IRFP451 IRFP451FI 450 V 450 V 0.4 0.4 IRFP452 IRFP452FI 500 V 500 V 0.5 0.5

2SC536E

Abstract: 2SC536E,F sanyo 2SC536e R1820 2SB808 2SA60 2SD1012 ITR08383 ITR08384 ITR08385
Contextual Info: Ordering number:ENN676D PNP/NPN Epitaxial Planar Silicon Transistors 2SB808/2SD1012 Low-Voltage Large-Current Amplifier Applications Package Dimensions unit:mm 2033A [2SB808/2SD1012] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 0.7 : 2SB808 3 1.3 1 : Emitter

Contextual Info: Ordering number:ENN6565 P-Channel Silicon MOSFET 5LP02SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2180 [5LP02SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 3

Contextual Info: Ordering number:ENN6554 P-Channel Silicon MOSFET 3LP02SP Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2180 [3LP02SP] 2.2 3.0 4.0 15.0 0.6 1.8 0.4 0.5 0.4 0.4 3

1206 pads layout

Abstract: profile wave soldering
Contextual Info: Multilayer Ceramic SMD Varistor Recommendation for Soldering 0.4~0.6 1.6~1.8 0.5~0.52 0.2~0.4 0603 0.8~1.2 2.5~3.0 0.6~1.0 0.3~0.6 0805 1.0~1.5 3.2~3.8 1.2~1.4 0.3~0.6 1206 1.8~2.5 4.2~5.8 1.2~1.6 0.4~0.8 1210 1.8~2.5 4.2~5.8 1.8~2.5 0.5~1.0 1812 2.5~3.5 5.5~6.1