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    CEBF630 Datasheets (3)

    Chino-Excel Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEBF630
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 162.46KB 5
    CEBF630
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Scan PDF 519.18KB 5
    CEBF630B
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 84.15KB 4

    CEBF630 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1m810

    Abstract: CEPF630
    Contextual Info: CEPF630B/CEBF630B PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 200V , 9A , RDS ON = 0.4 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		cepf630b/cebf630bo-220o-2631m810+1cepf630 PDF

    CEPF630

    Abstract: CEFF630 CEBF630
    Contextual Info: CEPF630/CEBF630 CEFF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES VDSS RDS ON ID @VGS CEPF630 Type 200V 0.35Ω 10A 10V CEBF630 200V 0.35Ω 10A 10V CEFF630 200V 0.35Ω 10A d 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		cepf630/cebf630ceff630cepf630cebf630+4o-263o-220o-220fo-220/263 PDF

    CEBF630B

    Abstract: CEFF630B CEIF630B CEPF630B CEBF630
    Contextual Info: CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		cepf630b/cebf630bceif630b/ceff630bcepf630bcebf630b+7ceif630bceff630bo-220o-263o-262o-220fcebf630 PDF

    CEIF630

    Abstract: CEPF630
    Contextual Info: CEIF630 CEPF630/CEBF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 10A, RDS ON = 350mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		ceif630cepf630/cebf630o-220o-263+2o-262cepf630 PDF

    CEPF630

    Contextual Info: CEPF630/CEBF630 March 1998 4 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V , 10A , RDS ON =350mΩ D @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package. G


    Original     		cepf630/cebf630o-220o-263current-contepf630/cebf630+1cepf630 PDF

    CEP50N06

    Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
    Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223


    Original     		o-251/to-252o-220/to-263ot-23ot-223+13ot-892928-8jo-220fmcep50n06cep83a3 equivalentcep83a3cef02n6acep6355fqpf8n60c equivalentcef04n6 equivalentcep63a3cep20n06cep76139 PDF

    transistor f630

    Abstract: f630 power transistor f630 bf630 CEPF630 CD108
    Contextual Info: March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES • 200V, 10A, Rds on =400itiQ @VGS=10V. • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability. • TO-220 & TO-263 package. CEB SERIES


    OCR Scan     		400itiqo-220o-263to-263+8to-220f630/ctransistor f630f630power transistor f630bf630cepf630cd108 PDF