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    CEIF630 Datasheets (2)

    Chino-Excel Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEIF630
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 83.89KB 4
    CEIF630B
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 84.15KB 4

    CEIF630 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CEBF630B

    Abstract: CEFF630B CEIF630B CEPF630B CEBF630
    Contextual Info: CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		cepf630b/cebf630bceif630b/ceff630bcepf630bcebf630b+7ceif630bceff630bo-220o-263o-262o-220fcebf630 PDF

    CEIF630

    Abstract: CEPF630
    Contextual Info: CEIF630 CEPF630/CEBF630 N-Channel Enhancement Mode Field Effect Transistor FEATURES 200V, 10A, RDS ON = 350mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.


    Original     		ceif630cepf630/cebf630o-220o-263+2o-262cepf630 PDF