Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    CEBF630B Search Results

    CEBF630B Datasheets (1)

    Chino-Excel Technology
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    CEBF630B
    		Chino-Excel Technology N-Channel Enhancement Mode Field Effect Transistor Original PDF 84.15KB 4

    CEBF630B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    1m810

    Abstract: CEPF630
    Contextual Info: CEPF630B/CEBF630B PRELIMINARY 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 200V , 9A , RDS ON = 0.4 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.


    Original     		cepf630b/cebf630bo-220o-2631m810+1cepf630 PDF

    CEBF630B

    Abstract: CEFF630B CEIF630B CEPF630B CEBF630
    Contextual Info: CEPF630B/CEBF630B CEIF630B/CEFF630B N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS ON ID @VGS CEPF630B 200V 0.4Ω 9A 10V CEBF630B 200V 0.4Ω 9A 10V CEIF630B 200V 0.4Ω 9A 10V CEFF630B 200V 0.4Ω 9A e 10V D Super high dense cell design for extremely low RDS(ON).


    Original     		cepf630b/cebf630bceif630b/ceff630bcepf630bcebf630b+7ceif630bceff630bo-220o-263o-262o-220fcebf630 PDF