GEO06861
Abstract: Q62702-P1605
Contextual Info: Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode 1.1 0.9 6.7 6.2 0.5 ˚ 0.2 0.1 0.0.1 0.3 1.2 1.1 Chip position BP 104 S 4.0 3.7 1.7 1.5 0.9 0.7 4.5 4.3 1.6 ±0.2 Cathode lead feo06862 Photosensitive area 2.20 mm x 2.20 mm GEO06861 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Q62702-P1605
Abstract: GEO06861
Contextual Info: 1.1 0.9 1.6 1.2 4.0 3.7 0.9 0.7 4.5 4.3 1.7 1.5 6.7 6.2 0.5 ˚ 0.3 0.0.1 1.2 1.1 Chip position BP 104 S 0.2 0.1 Neu: Silizium-PIN-Fotodiode New: Silicon PIN Photodiode Cathode lead feo06862 Photosensitive area 2.20 mm x 2.20 mm GEO06861 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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Q62702-P1602
Abstract: S8050
Contextual Info: BPW 34 S feo06862 Silizium-PIN-Fotodiode Silicon PIN Photodiode Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kurze Schaltzeit typ. 20 ns
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OHF01066
Abstract: Q62702-P1602 GEO06863 120 Hz IR photodiode S8050 BPW 34 S
Contextual Info: 1.1 0.9 1.8 1.4 4.0 3.7 0.9 0.7 4.5 4.3 1.7 1.5 6.7 6.2 0.5 ˚ 0.3 0.0.1 1.2 1.1 Chip position BPW 34 S 0.2 0.1 Silizium-PIN-Fotodiode Silicon PIN Photodiode Cathode lead feo06862 Photosensitive area 2.65 mm x 2.65 mm GEO06863 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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feo06862geo06863ohf00080ohf00081+7ohf00082ohf01402ohf01066q62702-p1602120 hz ir photodiodes8050bpw 34 s
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bpw 32
Abstract: foto transistor bpw 32 datasheet BPW 14 A BPW 14 C bpw 50 BPW-34 F 365 R Q62702-P1602 Q62702-P73
Contextual Info: BPW 34 BPW 34 S BPW 34 BPW 34 S feo06862 feo06643 Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Speziell geeignet für Anwendungen im
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feo06862feo06643bpw 32foto transistor+8bpw 32 datasheetbpw 14 abpw 14 cbpw 50bpw-34f 365 rq62702-p1602q62702-p73
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Q62702-P1605
Abstract: 27bp
Contextual Info: BP 104 S feo06862 Silizium-PIN-Fotodiode Silicon PIN Photodiode Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm ● Kurze Schaltzeit typ. 20 ns
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BPW34S
Abstract: E9087 GEO06643 GEO06863 GEO06916 Q62702-P1602 Q62702-P1790 Q62702-P73 S8050
Contextual Info: feo06643 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing
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isl 6251 schematic
Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Contextual Info: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.
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q62702-a772q62702-a731q62702-a773ot-23+10isl 6251 schematicsmd transistor a4ssiemens ofw 361smd marking b4h6bs smd transistornpn transistors list according to current, voltagtransistors diodes smd a7ha4s smd transistornpn transistor ss100smd transistor 6bs
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feo06643
Abstract: GEO06643 GEO06863 Q62702-P1602 Q62702-P73 S8050
Contextual Info: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 BPW 34 S feo06643 Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 0.6 0.4 0.8 0.6 0.6 0.4 0.35 0.2 0.5 0.3 0 . 5˚ 5.08 mm
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