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Contextual Info: 2014-01-09 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 S BPW 34 S Features: Besondere Merkmale: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density
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Contextual Info: 2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 BPW 34 Features: Besondere Merkmale: • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density
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p945
Abstract: p945 transistor transistor P945 GEOY6643 Q62702-P945
Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 25 ns
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p945p945 transistortransistor p945geoy6643+1q62702-p945
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BPW34S
Abstract: E9087 GEO06643 GEO06863 GEO06916 Q62702-P1602 Q62702-P1790 Q62702-P73 S8050
Contextual Info: feo06643 Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 BPW 34 S BPW 34 S E9087 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode NEU: in SMT und als Reverse Gullwing Silicon PIN Photodiode NEW: in SMT and as Reverse Gullwing
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feo06643e9087geo06643ohf00080+10ohf00081ohf00082ohf01402bpw34sgeo06863geo06916q62702-p1602q62702-p1790q62702-p73s8050
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Q62702-P1602
Abstract: Q62702-P1790 Q62702-P73
Contextual Info: Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S R18R BPW 34 BPW 34 S BPW 34 S (R18R) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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p945
Abstract: transistor P945 GEOY6863 p945 transistor GEOY6643 Q62702-P945 BPW34BS
Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT BPW 34 B BPW 34 BS Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 25 ns
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p945transistor p945geoy6863p945 transistor+3geoy6643q62702-p945bpw34bs
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E9087
Abstract: Q62702-P1602 Q62702-P1790 Q62702-P73 BPW 40 BPW 14 A BPW34S S8050 BPW34 BPW 20 k
Contextual Info: Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S E9087 BPW 34 BPW 34 S BPW 34 S (E9087) Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm
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e9087geo06863geo06916q62702-p1602+8q62702-p1790q62702-p73bpw 40bpw 14 abpw34ss8050bpw34bpw 20 k
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Contextual Info: 2007-04-03 Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Version 1.0 BPW 34 B, BPW 34 BS BPW 34 B Features: BPW 34 BS Besondere Merkmale: • Especially suitable for applications from 350 nm to
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Contextual Info: 2014-01-09 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 BPW 34 SR BPW 34 SR Features: Besondere Merkmale: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density
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BPW 40
Abstract: GEOY6643 GEOY6863
Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Lead Pb Free Product - RoHS Compliant BPW 34 B BPW 34 BS BPW 34 B BPW 34 BS Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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OHF01066
Abstract: bpw 104 BPW 34 datasheet bpw 50 Q65110A1209 BPW34S 34-s
Contextual Info: Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing Lead Pb Free Product - RoHS Compliant BPW 34, BPW 34 S, BPW 34 S (R18R) BPW 34 BPW 34 S BPW 34 S (R18R) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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bpw 104
Abstract: E9087 Q62702-P1602 Q62702-P1790 Q62702-P73 BPW34S
Contextual Info: Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S E9087 BPW 34 BPW 34 S BPW 34 S (E9087) Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 400 nm bis 1100 nm
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Q65110A1209
Abstract: Q62702P0073 bpw 104 BPW34 Q65110A2701 BPW34SR GEOY6643 OHF00080 Q65110-A1209 S8050
Contextual Info: Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing Lead Pb Free Product - RoHS Compliant BPW 34, BPW 34 S, BPW 34 SR BPW 34 BPW 34 S BPW 34 SR Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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Contextual Info: Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing Lead Pb Free Product - RoHS Compliant BPW 34, BPW 34 S, BPW 34 S (R18R) BPW 34 BPW 34 S BPW 34 S (R18R) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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p945
Abstract: transistor p945 ir p945 p945 transistor GEO06643 Q62702-P945
Contextual Info: Chip position 0.6 0.4 2.2 1.9 5.4 4.9 4.5 4.3 BPW 34 B 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 0.8 0.6 Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity 0.6 0.4 0.8 0.6 0.35 0.2 0.5 0.3 0.6
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feo06643geo06643ohf00080ohf00081+7ohf00082ohf01402p945transistor p945ir p945p945 transistorq62702-p945
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GEO06643
Abstract: Q62702-P945
Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit Silicon PIN Photodiode with Enhanced Blue Sensitivity BPW 34 B Wesentliche Merkmale • Speziell geeignet für Anwendungen im Bereich von 350 nm bis 1100 nm • Kurze Schaltzeit typ. 25 ns • DIL-Plastikbauform mit hoher Packungsdichte
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OHF01066
Abstract: Q62702-P1602 GEO06863 120 Hz IR photodiode S8050 BPW 34 S
Contextual Info: 1.1 0.9 1.8 1.4 4.0 3.7 0.9 0.7 4.5 4.3 1.7 1.5 6.7 6.2 0.5 ˚ 0.3 0.0.1 1.2 1.1 Chip position BPW 34 S 0.2 0.1 Silizium-PIN-Fotodiode Silicon PIN Photodiode Cathode lead feo06862 Photosensitive area 2.65 mm x 2.65 mm GEO06863 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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feo06643
Abstract: GEO06643 GEO06863 Q62702-P1602 Q62702-P73 S8050
Contextual Info: 5.4 4.9 4.5 4.3 0.8 0.6 0.6 0.4 2.2 1.9 Chip position 3.5 3.0 1.2 0.7 0.6 0.4 Cathode marking 4.0 3.7 BPW 34 BPW 34 S feo06643 Silizium-PIN-Fotodiode NEU: in SMT Silicon PIN Photodiode NEW: in SMT 0.6 0.4 0.8 0.6 0.6 0.4 0.35 0.2 0.5 0.3 0 . 5˚ 5.08 mm
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bpw 148
Contextual Info: 2014-01-10 Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Version 1.1 BPW 34 B, BPW 34 BS BPW 34 B Features: BPW 34 BS Besondere Merkmale: • Especially suitable for applications from 350 nm to
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Contextual Info: 2007-05-23 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 BPW 34 SR BPW 34 SR Features: Besondere Merkmale: • Suitable for reflow soldering • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density
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bpw 104
Abstract: E9087 Q62702-P1602 Q62702-P1790 Q62702-P73 BPW34S
Contextual Info: Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S E9087 BPW 34 BPW 34 S BPW 34 S (E9087) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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Q62702-P1790
Abstract: E9087 Q62702-P1602 Q62702-P73 BPW34S
Contextual Info: Silizium-PIN-Fotodiode; in SMT und als Reverse Gullwing Silicon PIN Photodiode; in SMT and as Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S E9087 BPW 34 BPW 34 S BPW 34 S (E9087) Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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GEOY6643
Abstract: GEOY6863 BPW34BS
Contextual Info: Silizium-PIN-Fotodiode mit erhöhter Blauempfindlichkeit; in SMT Silicon PIN Photodiode with Enhanced Blue Sensitivity; in SMT Lead Pb Free Product - RoHS Compliant BPW 34 B BPW 34 BS BPW 34 B BPW 34 BS Wesentliche Merkmale Features • Speziell geeignet für Anwendungen im Bereich
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Contextual Info: 2007-05-23 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.0 BPW 34 BPW 34 Features: Besondere Merkmale: • Especially suitable for applications from 400 nm to 1100 nm • Short switching time typ. 20 ns • DIL plastic package with high packing density
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