GEX06308
Abstract: Q62703-Q517
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) 2.0 1.7 1.8 1.2 3.5 Chip position 4.0 3.6 ø3.1 ø2.9 29 27 4.5 4.0 Cathode 0.6 0.4 GEX06308 fex06308 2.54 mm spacing 3.1 2.5 0.7 0.8 0.4 0.4 Area not flat 0.6 0.4 SFH 487 P Approx. weight 0.3 g
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gex06308fex06308ohr00880ohr00886+2ohr00949q62703-q517
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Q62703-Q517
Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Cathode SFH 487 P GEX06308 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode, hergestellt
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sfh 309 fr
Abstract: FR 309 diode AP 309 fr 309 Q62703-Q517
Contextual Info: SIEMENS GaAlAs-lR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 P Area not flat Cathode GEX06308 Approx. weight 0.3 g Mgße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features
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gex06sfh 309 frfr 309 diodeap 309+2fr 309q62703-q517
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TRANSISTOR SMD MARKING CODE 3401
Abstract: Q65110A6342 TRANSISTOR SMD MARKING CODE 702 fototransistor BPW 39 SFH415U sidelooker smd DIODE transistor smd 3401 SFH 4740 LPT80 BPY62
Contextual Info: Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden 107 Silicon Photodetectors, Optical Sensors and Infrared Emitters Si-Fotodetektoren, Optische Sensoren und IR-Lumineszenzdioden. 111
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gemy6050transistor smd marking code 3401q65110a6342transistor smd marking code 702+7fototransistor bpw 39sfh415usidelooker smd diodetransistor smd 3401sfh 4740lpt80bpy62
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STR G 8654
Abstract: A673 transistor transistor A673 transistor Bu 45080 TT 2188 mx 362-0 TRANSISTOR SMD MARKING CODE 3401 diode BZW 70-20 sfh 202 diode 3302 81a ir receiver
Contextual Info: Foreword Foreword Foreword Vorwort The information in this catalog is correct as of March 2011. Die Angaben in diesem Katalog entsprechen dem Stand März 2011. All products listed in this catalog are RoHS compliant, a fact that will be explicitly noted in the respective data sheet. For up-to-date
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str g 8654a673 transistortransistor a673transistor bu 45080+6tt 2188mx 362-0transistor smd marking code 3401diode bzw 70-20sfh 202 diode3302 81a ir receiver
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GEX06308
Abstract: OHLY0598
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Lead (Pb) Free Product - RoHS Compliant SFH 487 P Wesentliche Merkmale Features • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an
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GEX06308
Abstract: OHLY0598
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Lead (Pb) Free Product - RoHS Compliant SFH 487 P Wesentliche Merkmale Features • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an
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TRANSISTOR SMD MARKING CODE 3401
Abstract: DIODE B-10 TRANSISTOR SMD MARKING CODE 702 TRANSISTOR SMD MARKING CODE r28 TRANSISTOR SMD MARKING CODE NM SFH4450 GEOY6969 SFH 4232 SFH 4740 702 transistor smd code
Contextual Info: Infrared Components ge 88 - 92 107 108 Infrared Components Summary of Types Silicon Photodetectors For moreComponents Infrared detailed product Summary information of Types andSilicon technical Photodetectors datasheets, please visit http://catalog.osram-os.com
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gexy6713transistor smd marking code 3401diode b-10transistor smd marking code 702+7transistor smd marking code r28transistor smd marking code nmsfh4450geoy6969sfh 4232sfh 4740702 transistor smd code
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OPTOKOPPLER
Abstract: OHR00886
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Lead (Pb) Free Product - RoHS Compliant SFH 487 P Wesentliche Merkmale Features • • • • GaAlAs-LED mit sehr hohem Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit Gute spektrale Anpassung an
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optokoppler
Abstract: GEX06308 Q62703-Q517
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 487 P Wesentliche Merkmale • GaAlAs-LED mit sehr hohem Wirkungsgrad • Hohe Zuverlässigkeit • Hohe Impulsbelastbarkeit • Gute spektrale Anpassung an Si-Fotoempfänger • Gehäusegleich mit SFH 309
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IEC 62471 osram
Contextual Info: 2007-04-02 GaAlAs Infrared Emitter 880 nm GaAlAs-IR-Lumineszensdiode (880 nm) Version 1.0 SFH 487 P Features: • • • • • Besondere Merkmale: Very highly efficient GaAlAs-LED High reliability High pulse handling capability Good spectral match to silicon photodetectors
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