GEX06 Search Results

SFH 485-2

Contextual Info: SIEM ENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 A rea not flat • ■ Cathode GEX06271 Approx. weight 0.5 g Area not flat 9.0 Cathode 8.2 CO I LO oo E 05 7.8 7.5 Js«_ 'S LO Q C\J LO t T Q Q CO 1.5 4.8 4.2 29

ls 487

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 409 Area not flat 4.0 3.6 0iffei 5 2 9 - ^ 6.3 27 5.9 ^ C a th o d e S F H 409 Anode (SFH 487) — (3.5) Chip position . _0.6 ,.v^ V 0.4 GEX06250 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

LD271 IR LED

Abstract: LD271 APPLICATIONS IR LD271 siemens LD
Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 5.9 5.5 0.6 0.4 GEX06239 Approx. weight 0.5 g Cathode 5.9 5.5 OO T— ¡a 0.6 0.4 Area not flat GE006645 Chip position Approx. weight 0.2 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

GEX06971

Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P Vorläufige Daten / Preliminary Data 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 1.8 1.2 3.85 3.35 Area not flat 0.6 0.4 Chip position Approx. weight 0.5 g fex06306 GEX06971

Siemens SFH 506

Abstract: siemens SFH nm sfh siemens SFH-506 0 506 10 Scans-00145338
Contextual Info: SFH 506 SIEM ENS IR-Empfänger/Demodulator-Baustein IR-Receiver/Demodulator Device Surface not lat h— 9-2 — l i R 2.75 ( / sr\ GND 12.9 12.1 * i n o io «ow ö o o 1.5 ~ I GEX06841 _ 16.3 15.9 31.1 30.1 ’ T —L 4T jâ mk w T t CO TT Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor SFH 313 SFH 313 FA New: Silicon NPN Phototransistor .O -'“ ’ Area not flat 9.0 5.9 5.5 0.6 0.4 5.1 Chip position Cathode Diode Collector (Transistor) GEX06260 M aße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.

Contextual Info: SIEMENS Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time SFH 213 SFH 213 FA CO CM Û O CO Area not flat 0.6 0 .4 Cathode (Diode Collector (Transistor) GEX06260 (O (O (O C\J Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 314 SFH 314 FA Area not flat 5.9 5.5 JX6 0.4 GEX06630 Collector Transistor Maße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale

GEO06645

Abstract: GEX06239 LD271 OHRD1938 Q62703-Q148 Q62703-Q256 Q62703-Q833 Q62703-Q838 LD271 APPLICATIONS LD271 IR LED
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 9.0 8.2 7.8 7.5 1.0 0.7 5.9 5.5 ø5.1 ø4.8 1.3 1.0 1.8 1.2 14.0 13.0 0.6 0.4 4.8 4.2 11.4 11.0 Cathode Chip position fex06628 2.54 mm spacing 0.6 0.4 GEX06239

GEX06260

Abstract: Q62703-Q1031 Q62703-Q1819 Q62703-Q1820 OHR01882 transistor SR 51
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 274 Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 0.6 0.4 5.7 5.1 Chip position GEX06260 fex06260 2.54 mm spacing 0.6 0.4 Approx. weight 0.5 g

LD271 IR LED

Abstract: LD271 LD271 remote control IR LD271 GEO06645 GEX06239 OHRD1938 Q62703-Q148 Q62703-Q256 Q62703-Q833
Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 9.0 8.2 7.8 7.5 1.0 0.7 5.9 5.5 ø5.1 ø4.8 1.3 1.0 1.8 1.2 14.0 13.0 0.6 0.4 4.8 4.2 11.4 11.0 Cathode Chip position fex06628 2.54 mm spacing 0.6 0.4 GEX06239

GEX06308

Abstract: Q62703-Q517
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) 2.0 1.7 1.8 1.2 3.5 Chip position 4.0 3.6 ø3.1 ø2.9 29 27 4.5 4.0 Cathode 0.6 0.4 GEX06308 fex06308 2.54 mm spacing 3.1 2.5 0.7 0.8 0.4 0.4 Area not flat 0.6 0.4 SFH 487 P Approx. weight 0.3 g

GEX06626

Abstract: Q62703-Q1094 OHR00878 OHR00886
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 0.6 0.4 5.7 5.1 Chip position fex06626 Anode 1.8 1.2 29.5 27.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 9.0 8.2 7.8 7.5 GEX06626 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

GEX06260

Abstract: Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Contextual Info: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 1.8 1.2 29 27 0.6 0.4 5.7 5.1 Chip position GEX06260 fexf6626 Cathode Diode Collector (Transistor)

GEX06306

Abstract: Q62703-Q516
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 5.9 5.5 ø5.1 ø4.8 5.0 4.2 0.6 0.4 0.6 0.4 1.0 0.5 Chip position 29 27 fex06306 GEX06306 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

wavelength of sfh484

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat ,-c # #*• 1 ^ C\J (O o GEX06271 Area not flat Cathode 5.9 5.5 W 0.6 *04 in o CO (O o X 0) GEX06305 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH415 SFH 416 Area not flat o Cathode Diode Collector (Transistor) CO (O (O o X 0) GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

GEX06626

Abstract: GEX06984 Q62702-P5059 Q62702-P5060
Contextual Info: Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter SFH 4591 SFH 4592 Area not flat 1.8 1.2 29.5 27.5 0.6 0.4 5.7 5.1 SFH 4591 Chip position fex06260 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 9.0 8.2 7.8 7.5 GEX06626 Area not flat

Q62703-Q1756

Abstract: marking 55 485 DSA0051095 SFH 340 GEX06271 GEX06305 Q62703-Q1092 Q62703-Q1093 Q62703-Q1547 Q62703-Q1755
Contextual Info: GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat Cathode 5.9 5.5 0.6 0.4 5.7 5.1 fex06271 1.8 1.2 29 27 9.0 8.2 7.8 7.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.5 0.6 0.4 Chip position GEX06271 Approx. weight 0.5 g

GEX06250

Abstract: SFH 409 SFH 487 Q62703-Q1095 Q62703-Q2174
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880nm GaAIAs Infrared Emitter (880 nm) SFH 487 Area not flat 0.7 0.4 5.2 4.5 4.1 3.9 4.0 3.6 ø3.1 ø2.9 0.8 0.4 1.8 1.2 29 6.3 5.9 27 Cathode (SFH 409) Anode (SFH 487) 0.6 0.4 (3.5) Chip position GEX06250 fex06250 2.54 mm spacing

siemens SFH 960

Contextual Info: SIEM ENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 486 A rea not flat 5.9 5.5 JX6 •w i S I 0.4 Anode GEX06626 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale

Q62703-Q517

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Cathode SFH 487 P GEX06308 Approx. weight 0.3 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche Merkmale Features • GaAIAs-IR-Lumineszenzdiode, hergestellt

GEX06306

Abstract: Q62703-Q516 OHR01893
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 29 27 5.9 5.5 0.6 0.4 1.0 0.5 Chip position GEX06306 fex06306 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 ø5.1 ø4.8 5.0 4.2 0.6 0.4 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS IR-Empfänger/Demodulator-Baustein IR-Receiver/Demodulator Device SFH 506 • Surface not flat * GC 1 LO LO 'íl­ CO e o CD O GEX06841 Vlaße in mm, wenn nicht anders angegeben/D im ensions in mm, unless otherw ise specified. Wesentliche Merkmale