GEX06626
Abstract: Q62703-Q1094 OHR00878 OHR00886
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 0.6 0.4 5.7 5.1 Chip position fex06626 Anode 1.8 1.2 29.5 27.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 9.0 8.2 7.8 7.5 GEX06626 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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fex06626gex06626tv-s40ohr00949+4ohr01733q62703-q1094ohr00878ohr00886
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GEX06260
Abstract: Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Contextual Info: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 1.8 1.2 29 27 0.6 0.4 5.7 5.1 Chip position GEX06260 fexf6626 Cathode Diode Collector (Transistor)
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fex06626gex06260fexf6626ohf02336+8ohf02342ohf02340q62702-p1667q62702-p1674q62702-p1751q62702-p1752q62702-p1753q62702-p1754
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SFH313
Abstract: SFH313 siemens
Contextual Info: SIEMENS A re a not SFH 313 SFH 313 FA fex06626 Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor fla t C o l le c t o r T r a n s i s t o r w e ig h t 0 .5 g fexf6626 A p p ro x . Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.
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foto transistor
Abstract: OHF02331 p1752 phototransistor 500-600 nm GEX06260 Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753
Contextual Info: SFH 313 SFH 313 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 2.54 mm spacing 0.6 0.4 0.6 0.4
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fex06626gex06260fexf6626ohf02336+11ohf02342ohf02340foto transistorohf02331p1752phototransistor 500-600 nmq62702-p1667q62702-p1674q62702-p1751q62702-p1752q62702-p1753
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Q62702-P1667
Abstract: Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Contextual Info: SFH 313 SFH 313 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fexf6626 fex06626 .Neu: Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im
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850 nm LED
Abstract: foto transistor SFH213 5 mm 850 nm LED Q62702-P1671 Q62702-P930 SFH213FA
Contextual Info: SFH 213 SFH 213 FA SFH 213 SFH 213 FA fexf6626 fex06626 Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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fexf6626fex06626850 nm ledfoto transistor+5sfh2135 mm 850 nm ledq62702-p1671q62702-p930sfh213fa
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GEX06626
Abstract: Q62703-Q1094
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 1.8 1.2 29.5 27.5 9.0 8.2 7.8 7.5 ø5.1 ø4.8 5.9 5.5 0.6 0.4 5.7 5.1 Chip position fex06626 Anode 0.8 0.4 2.54 mm spacing 0.6 0.4 GEX06626 Approx. weight 0.5 g Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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fex06626gex06626con40ohr00949+2ohr01733q62703-q1094
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GEX06626
Abstract: GEX06984 Q62702-P5059 Q62702-P5060
Contextual Info: Schnelle GaAlAs-IR-Lumineszenzdiode High-Speed GaAlAs Infrared Emitter SFH 4591 SFH 4592 Area not flat 1.8 1.2 29.5 27.5 0.6 0.4 5.7 5.1 SFH 4591 Chip position fex06260 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 9.0 8.2 7.8 7.5 GEX06626 Area not flat
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fex06260gex06626gex06984ohr00397+3ohf00361q62702-p5059q62702-p5060
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