GEO06645
Abstract: GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296
Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54 mm 1.8 1.2 9.0 8.2 0.6 0.4 GEO06645 Chip position Area not flat 29.5 27.5 Cathode Diode
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fexf6626geo06645fex06630gex06630+7ohr01553ohr00860ohrd1938q62702-p1136q62702-p1137q62702-p1139q62702-p296
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GEX06260
Abstract: Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Contextual Info: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.4 0.6 0.4 1.8 1.2 29 27 0.6 0.4 5.7 5.1 Chip position GEX06260 fexf6626 Cathode Diode Collector (Transistor)
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fex06626gex06260fexf6626ohf02336+8ohf02342ohf02340q62702-p1667q62702-p1674q62702-p1751q62702-p1752q62702-p1753q62702-p1754
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SFH 4501
Contextual Info: Opto Semiconductors Schnelle IR-Lumineszenzdiode 950 nm im 5 mm Radial-Gehäuse High-Speed Infrared Emitter (950 nm) in 5 mm Radial Package fexf6626 9.0 8.2 7.8 7.5 5.9 5.5 0.8 0.4 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 Area not flat SFH 4501 SFH 4502 29.5
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fexf6626gex06952ohf00810ohf00784+2ohf00859sfh 4501
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SFH313
Abstract: SFH313 siemens
Contextual Info: SIEMENS A re a not SFH 313 SFH 313 FA fex06626 Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor fla t C o l le c t o r T r a n s i s t o r w e ig h t 0 .5 g fexf6626 A p p ro x . Maße in mm, w enn nicht anders angegeben/D im ensions in mm, unless otherw ise specified.
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sfh 517
Abstract: Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 TA521 SFH415
Contextual Info: SFH 415 SFH 416 SFH 415 SFH 416 fex06630 fexf6626 GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● GaAs-IR-Lumineszenzdioden, hergestellt
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fex06630fexf6626415-t415-u+8416-rsfh 517q62702-p1136q62702-p1137q62702-p1139q62702-p296ta521sfh415
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transistor 415
Abstract: GEO06645 GEX06630 OHRD1938 Q62702-P1136 Q62702-P1137 Q62702-P1139 Q62702-P296 transistor sr 61
Contextual Info: GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode 29 27 7.8 7.5 5.9 5.5 4.8 4.2 Area not flat 0.6 0.4 fexf6626 0.4 0.6 ø4.8 ø5.1 0.4 0.8 spacing 2.54mm 1.8 1.2 9.0 8.2 GEO06645 Chip position Approx. weight 0.2 g 5.9 5.5 0.6 0.4 4.0
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fexf6626geo06645gex06630fex06630+9ohr01553ohr00860transistor 415ohrd1938q62702-p1136q62702-p1137q62702-p1139q62702-p296transistor sr 61
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Q62702-P1667
Abstract: Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753 Q62702-P1754
Contextual Info: SFH 313 SFH 313 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fexf6626 fex06626 .Neu: Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● Speziell geeignet für Anwendungen im
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850 nm LED
Abstract: foto transistor SFH213 5 mm 850 nm LED Q62702-P1671 Q62702-P930 SFH213FA
Contextual Info: SFH 213 SFH 213 FA SFH 213 SFH 213 FA fexf6626 fex06626 Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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fexf6626fex06626850 nm ledfoto transistor+5sfh2135 mm 850 nm ledq62702-p1671q62702-p930sfh213fa
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foto transistor
Abstract: OHF02331 p1752 phototransistor 500-600 nm GEX06260 Q62702-P1667 Q62702-P1674 Q62702-P1751 Q62702-P1752 Q62702-P1753
Contextual Info: SFH 313 SFH 313 FA NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor SFH 313 SFH 313 FA fex06626 .Neu: Area not flat 1.8 1.2 29 27 Cathode Diode Collector (Transistor) 9.0 8.2 7.8 7.5 5.9 5.5 ø5.1 ø4.8 0.8 0.4 2.54 mm spacing 0.6 0.4 0.6 0.4
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fex06626gex06260fexf6626ohf02336+11ohf02342ohf02340foto transistorohf02331p1752phototransistor 500-600 nmq62702-p1667q62702-p1674q62702-p1751q62702-p1752q62702-p1753
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