FEX06306 Search Results

GEX06971

Contextual Info: GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 495 P Vorläufige Daten / Preliminary Data 5.0 4.2 Anode 5.9 5.5 ø5.1 ø4.8 2.54 mm spacing 0.6 0.4 0.8 0.4 29 27 1.8 1.2 3.85 3.35 Area not flat 0.6 0.4 Chip position Approx. weight 0.5 g fex06306 GEX06971

Q62703-Q516

Abstract: diode SR 315
Contextual Info: SFH 485 P SFH 485 P fex06306 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale ● GaAIAs-IR-Lumineszenzdiode, hergestellt im Schmelzepitaxieverfahren

GEX06306

Abstract: Q62703-Q516
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 5.9 5.5 ø5.1 ø4.8 5.0 4.2 0.6 0.4 0.6 0.4 1.0 0.5 Chip position 29 27 fex06306 GEX06306 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS SFH 485 P fex06306 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. W esentliche M erkm ale Features • • • • • • GaAIAs-IR-Lum ineszenzdiode, hergestellt

GEX06306

Abstract: Q62703-Q516 OHR01893
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 29 27 5.9 5.5 0.6 0.4 1.0 0.5 Chip position GEX06306 fex06306 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 ø5.1 ø4.8 5.0 4.2 0.6 0.4 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

GEX06306

Abstract: Q62703-Q516
Contextual Info: GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter (880 nm) SFH 485 P Area not flat 29 27 5.9 5.5 0.6 0.4 1.0 0.5 Chip position GEX06306 fex06306 0.8 0.4 2.54 mm spacing 1.8 1.2 Cathode 3.85 3.35 ø5.1 ø4.8 5.0 4.2 0.6 0.4 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.