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    Q62703-Q1093

    Abstract: Q62703-Q1092 Q62703-Q1547 Q62703-Q1755 Q62703-Q1756 of max 485 SFH 340
    Contextual Info: SFH 484 SFH 485 SFH 484 SFH 485 fex06305 fex06271 GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale Features ● Hergestellt im Schmelzepitaxieverfahren


    Original     		fex06305fex06271q62703-q1093q62703-q1092+5q62703-q1547q62703-q1755q62703-q1756of max 485sfh 340 PDF

    Q62703-Q1756

    Abstract: marking 55 485 DSA0051095 SFH 340 GEX06271 GEX06305 Q62703-Q1092 Q62703-Q1093 Q62703-Q1547 Q62703-Q1755
    Contextual Info: GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat Cathode 5.9 5.5 0.6 0.4 5.7 5.1 fex06271 1.8 1.2 29 27 9.0 8.2 7.8 7.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.5 0.6 0.4 Chip position GEX06271 Approx. weight 0.5 g


    Original     		fex06271gex06271fex06305gex06305+10ohr00949ohr01892q62703-q1756marking 55 485dsa0051095sfh 340q62703-q1092q62703-q1093q62703-q1547q62703-q1755 PDF

    Q62703-Q1756

    Abstract: GEX06271 GEX06305 Q62703-Q1092 Q62703-Q1093 Q62703-Q1547 Q62703-Q1755 4842
    Contextual Info: GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) SFH 484 SFH 485 Area not flat Cathode 5.9 5.5 0.6 0.4 5.7 5.1 29 27 fex06271 1.8 1.2 9.0 8.2 7.8 7.5 ø5.1 ø4.8 2.54 mm spacing 0.8 0.5 0.6 0.4 Chip position GEX06271 Area not flat Cathode


    Original     		fex06271gex06271fex06305gex06305+8ohr00949ohr01892q62703-q1756q62703-q1092q62703-q1093q62703-q1547q62703-q17554842 PDF