UPC8112 Search Results

Contextual Info: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8112T SILICON MMIC 1st FREQUENCY DOWN-CONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC8112T is a silicon monolithic integrated circuit designed as cellular/cordless telephone receiver stage. 1st frequency down-converter for

fl capacitor 1000

Abstract: t06 93
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 -3 0 0 MHz INPUT IP3: -7 dBm LOW VOLTAGE OPERATION: 2 .7 -3 3 V LOW CURRENT CONSUMPTION: 8.5 mA POWER SAVE FUNCTION

2 LOIF

Abstract: UPC8112T UPC8112T-E3
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 - 300 MHz IF Output RF Input • INPUT IP3: -7 dBm • LOW VOLTAGE OPERATION: 2.7~3.3 V • LOW CURRENT CONSUMPTION: 8.5 mA

sot26 sot363 transistor

Abstract: transistor to6 UPG152TA SSOP20 package 2746 transistor UPG137 UPC8119 NE68730 NE68818 UPC2745
Contextual Info: 900MHz NEW! NE68730 Bipolar Transistor • Low noise figure: 1.2 dB typ at 900MHz • Optimum Noise Match: Close to 50 Ohms • Miniature package: 1.25 x 2.0 mm UPC2745/46TB Buffer Amps UPC8112T Downconverter • 3V operation • 13 dB typ Conversion Gain

UPG137

Abstract: 2746 transistor NE34018 NE68818 UPC2745 UPC2771T UPC8112T UPG152TA sot26 sot363 transistor
Contextual Info: PCS NEW! NEW! NE34018 HEMT • Low cost plastic package • + 30 dBm Output IP3 • -18 dB Input Return Loss • 0.8 dB Noise Figure • 16 dB Associated Gain UPC8112T Downconverter UPC2745 /46TB Buffer Amps • 3 V operation • 13 dB typ Conversion Gain

UPC2798GR

Contextual Info: Configuration Drawings Frequency Downconverters UPC1686GV/ 2721GV/2722GV UPC2756T ose ose ose Vcc Coupling (Feedback) (Bypass) (F o u t2 GND R F in -2 UPC2757T/58T UPC8112T R F in - i (Bypass) UPC2768GR UPC2782GR UPC2798GR Configuration Drawings IQ Modulators

UPC8112T

Abstract: UPC8112TB UPC8112TB-E3-A
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES UPC8112TB INTERNAL BLOCK DIAGRAM • HIGH DENSITY SURFACE MOUNTING: 6 Pin Super Minimold or SOT-363 Package IF Output RF Input • BROADBAND OPERATION: RF = 0.8 to 2.0 GHz IF = 100 to 300 MHz • INPUT IP3: -7 dBm

Contextual Info: PRELIMINARY DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT uPC8112TB SILICON MMIC 1st FREQUENCY DOWNCONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ¿¿PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency downconverter tor

UPC8112T

Abstract: UPC8112T-E3
Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER UPC8112T INTERNAL BLOCK DIAGRAM FEATURES • BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100 - 300 MHz IF Output RF Input • INPUT IP3: -7 dBm • LOW VOLTAGE OPERATION: 2.7~3.3 V • LOW CURRENT CONSUMPTION: 8.5 mA

Contextual Info: 3 V SILICON MMIC L-BAND FREQUENCY DOWN CONVERTER FEATURES upC8112T INTERNAL BLOCK DIAGRAM BROADBAND OPERATION: RF Input: 800 - 2000 MHz IF Output: 100- 300 MHz INPUT IP3: -7 dBm LOW VOLTAGE OPERATION: 2.7~3.3 V LOW CURRENT CONSUMPTION: 8.5 mA POWER SAVE FUNCTION

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

MRF581

Abstract: 2SK163 BFG480W NB b6 smd transistor 2SK508 SMD transistor n36 bf998 TEF6860HL 3SK290 baw 92
Contextual Info: RF᠟‫ݠ‬㄀8⠜ RF RFׂ೗‫ڦ‬ᆌᆩࢅยऺ๮֩ 2006౎6ሆ ݀քන೺ǖ2006౎6ሆ ࿔ॲຩႾࡽǖ9397 750 15589 Henk RoelofsLjޭጺ֋&ጺঢ়૙RFׂ೗ ०঻ ௅ᅃӲԨ࿢்‫ࣷۼ‬ၠጲम༵‫؜‬཈቟ᅜ߀฀࿢்‫ڦ‬RF๮֩ă‫ڼ‬8Ӳᄺփ૩ྔă࿢்ᅙཁेକ߸‫ܠ‬एᇀ

Motorola transistor smd marking codes

Abstract: walkie-talkie transceiver diagram BFM505 BF256B spice model 2SK163 UAF3000 BGO807C FET marking code 365 marking code M2 SOT23 SOT56
Contextual Info: RF Manual 8 edition th Application and design manual for RF products June 2006 date of release: June 2006 document order number: 9397 750 15589 Henk Roelofs,Vice President & General Manager RF Products Introduction Every edition we challenge ourselves to improve our RF manual. This 8th edition is no exception.

CAPACITOR

Contextual Info: PRELIM IN A R Y DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT u P C 8 1 1 2 T B SILICON MMIC 1st FREQUENCY DOWNCONVERTER FOR CELLULAR/CORDLESS TELEPHONE DESCRIPTION The ^¡PC8112TB is a silicon monolithic integrated circuit designed as 1st frequency downconverter for

FET marking code g5d

Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
Contextual Info: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

J243 336

Abstract: IM361 PC2758 pc2757tb 58rf j374 PC2758TB J148 314 j122 nec J141
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

nec mosfet marked v75

Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

BFG591 amplifier

Abstract: 5.8GHz Analog RF mmic MRF6Vp3450 nxp Standard Marking BLF6G21-10G FET 2N5459 RF LNB C band chipset radar 77 ghz sige 82 sot363-6 Dect antenna smd code marking ft sot23
Contextual Info: RF手册 第12版 RF产品的应用和设计手册 2009年6月 Experience high-performance analog 体验高性能模拟产品 恩智浦RF手册令设计更简易 恩智浦 RF手册是当今RF设计市场上最重要的参考工具之一，展示了我们恩智浦半导体 (NXP

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

RF1119

Abstract: TZA3036 lnb ku UAA 1006 BF862 AM LNA BFG480W ic lnb 2SK163-L TFF1003 TFF1003HN
Contextual Info: RF᠟‫ݠ‬㄀11⠜ RFѻકⱘᑨ⫼੠䆒䅵᠟‫ݠ‬ 2008ᑈ9᳜ www.nxp.com 2008 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract,

2SK43 transistor

Abstract: smd transistor m29 sot343 UXA23465 Motorola transistor smd marking codes walkie-talkie transceiver diagram UXA23476 diode SMD WL sot23 BF862 AM LNA uaf3000 2SK163
Contextual Info: th 1 ed ition 10 th editio n t h 1 e d th i t i o n RF manual 10 edition 10 Application and design manual for RF products TH September 2007 www.nxp.com 2007 NXP B.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written

Audio Power Amplifier MOSFET TOSHIBA

Abstract: P-Channel Depletion Mosfets RF MODULE CIRCUIT DIAGRAM dect gaas fet vhf uhf varicap diode Laser Diode for dvd 500 mW 2SK508 J113 equivalent BGY88/04 MOTOROLA N CHANNEL POWER MOS FET TRANSISTORS
Contextual Info: Semiconductors RF Manual 6th edition Application and design manual for RF products May 2005 date of release: May 2005 document order number: 9397 750 15125 Semiconductors Henk Roelofs,Vice President & General Manager RF Products Introduction The RF Manual covers a broad variety of material and many aspects about RF systems. It shows