TRANSISTOR SE 140 Search Results

Contextual Info: TLP291 SE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP291(SE Power Supplies Programmable Controllers Hybrid ICs Unit: mm TLP291(SE consists of photo transistor optically coupled to a gallium arsenide infrared emitting diode. TLP291(SE is housed in the SO4 package, very small and thin coupler.

Contextual Info: TLP290 SE TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP290(SE Programmable Controllers AC/DC-Input Module Hybrid ICs Unit: mm TLP290(SE consist of photo transistor, optically coupled to two gallium arsenide infrared emitting diode connected inverse parallel, and can operate

Contextual Info: BCX71H PNP EPITAXIAL SILICON TRANSISTOR G EN ERAL PURPO SE TRANSISTOR ABSO LUTE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation Storage Temperature Sym bol

BUK552

Abstract: BUK552-60A BUK552-60B T0220AB 42e0 TSLA
Contextual Info: PHILIPS INTERNATIONAL b SE ]> B 7110fiSb 00b421b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

BUK637-400A

Abstract: BUK637-400B P02S
Contextual Info: N AMER PHILIPS/DISCRETE E SE D ^53=131 □020b7D 2 PowerMOS transistor Fast Recovery Diode FET GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. FREDFET with fast recovery reverse diode, particularly suitable

DIODE T25 4 EO

Abstract: B44 transistor 711002b BUK456-60H T0220AB PHILIPS fw 373
Contextual Info: fc,SE i> PHILIPS INTERNATIONAL m 711Qfl2b QObMlll b4H « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERA L D ESCRIPTIO N N-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope. The device is intended for u se in Switched

it4142

Abstract: it414 BCX71H MMBT5086
Contextual Info: S A MS UN G SE MIC OND UCT OR INC BCX71H IME D | 0GQ7225 M | PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR SOT-23 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current

BUK446

Abstract: BUK446-1000A transistor k446 BUK446-1000B k446 diode t25 4 L0
Contextual Info: N AMER PHILIPS/DISCRETE 2 SE D • bbS3131 Q02042S M PowerMOS transistor BUK446-1000A BUK446-1000B T - 3 7 - 0 ? GENERAL DESCRIPTION N-channel enhancement mode fieid-effect power transistor in a plastic full-pack envelope. The device is intended for use in

BUK627-450B

Abstract: tic 120 TIC 220
Contextual Info: N A ME R PHILIPS/DISCRETE 2 SE D • bbS3T31 OQSObSS PowerMOS transistor Fast Recovery Diode FET b ■ BUK627-450B GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic full pack envelope. FREDFET with fast recovery

mj6503 motorola

Abstract: MJ6503 mj6503 transistor MJ6502 MARK B3L MJ-6503
Contextual Info: MOTOROLA SC X S TR S /R F 1 SE D I b 3b ? 2 S4 QQÖMTÖS 2 | MOTOROLA SEMICONDUCTOR MJ6503 TECHNICAL DATA D e siS’ruM's D ata Sheet 8 AM PERE PNP SIUCON POWER TRANSISTOR SWITCHMODE SERIES PNP SILICON POWER TRANSISTOR 400 VOLTS 125 WATTS The MJ6503 transistor is designed for high-voltage, high-speed,

transistor code 274

Abstract: CXT3019
Contextual Info: centrar C X T3019 Semiconductor Corp. NPN SILICON TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C TO R CXT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose

BUK426-100A

Abstract: BUK426-100B BUK426-100
Contextual Info: N AMER PHILIPS/DISCRETE 5 SE D • D020245. T PowerMOS transistor ■ BUK426-100A BUK426-100B T - 3 9 -/7 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full pack envelope, th e device is intended for use in Switched Mode Power Supplies

BUK454

Abstract: BUK454-400A BUK454-400B T0220AB
Contextual Info: 2 SE D N AMER PHI LIP S/DISCRET E ^53*131 ODSQMbO 2 BUK454-400A BUK454-400B PowerMOS transistor r - 3?-n GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

BUK545-50A

Abstract: 1E05 BUK545 BUK545-50B
Contextual Info: N AMER PHILIPS/DISCRETE 5 SE D • fc.hS3T31 DDEOSTQ 4 ■ PowerMOS transistor Logic Level FET BUK545-50A BUK545-50B r - 3 7 -< 0 7 GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

buk453

Abstract: BUK453-100B a1w* transistor SL 100B BUK453-100A T0220AB Ha 100b A1W TRANSISTOR
Contextual Info: N AMER PHILIPS/DISCRETE 2 SE D • b b 5 3 ,i31 0G204S0 T ■ PowerMOS transistor BUK453-100A BUK453-100B T -3<i-\i GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: MITSUBISHI TRANSISTOR M ODULES QM30TB-2H MEDIUM POW ER SWITCHING U SE INSULATED TYPE • Ic • Vcex Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75 • hFE • Insulated Type

BUK455-500A

Abstract: BUK455-500B RFTN-1 BUK455 25KW T0220AB
Contextual Info: N AMER PHI LI PS /D ISCR ET E 2 SE D o a a D s iD a BUK455-500A BUK455-500B PowerMOS transistor T “ £ 7 - IS GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

2N3441

Abstract: transistor 7150 booc power transistors 7150 Transistor
Contextual Info: 2N3441 NPN Power transistor for AF amplifiers and switching applications 2 N 3 4 4 1 is a sin g le -d iffu se d N P N silic o n transistor in a T O - 6 6 case. T h e collector is electrically co n n e c te d to the case. T h e transistor 2 N 3 4 4 1 is particularly suitable for

Contextual Info: j SAM SUNG SE M IC O N D U C T O R INC MPSL01 14E D | 7 ^ 1 4 3 00073^0 â J 'T NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em lttsr V ilta fl« : Vcio=120V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

2N3635

Contextual Info: 2N3635 GENERAL PURPOSE TRANSISTOR PNP SILICON 6.95 Tra. 1 of 1 Home Part Number: 2N3635 Online Store 2N3635 Diodes G ENERAL PURPO SE TRANSISTO R ( PNP SILIC O N) Transistors Enter code INTER3 at checkout.*

philips ID 27

Abstract: hjb surface mount 100-P BUK482-60A
Contextual Info: PHILIPS INTERNATIONAL b SE T> • ?HDa2b DObmt.3 Philips Semiconductors N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device Is intended for use in automotive and general purpose

Contextual Info: SE M IC O N D U C T O R 2N5550S TECHN ICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. L B L D IM FEATURES • High Collector Breakdwon Voltage 2.93 ± 0.20 B 1.3040.20/-0.15 C : Vcbo=160V, Vceo=140V • Low Leakage Current.

BUZ90A

Abstract: T0220AB K 3911
Contextual Info: PowerMOS transistor N AMER P H I L I P S / D I S C R E T E ObE BUZ90A. D 1^53=131 OOm SEÔ 2 • T -3 ^ 1 1 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies