TRANSISTOR SE 140 Search Results

Contextual Info: TLP291 SE TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP291(SE Power Supplies Programmable Controllers Hybrid ICs Unit: mm TLP291(SE consists of photo transistor optically coupled to a gallium arsenide infrared emitting diode. TLP291(SE is housed in the SO4 package, very small and thin coupler.

BUK552

Abstract: BUK552-60A BUK552-60B T0220AB 42e0 TSLA
Contextual Info: PHILIPS INTERNATIONAL b SE ]> B 7110fiSb 00b421b Philips Semiconductors PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

DIODE T25 4 EO

Abstract: B44 transistor 711002b BUK456-60H T0220AB PHILIPS fw 373
Contextual Info: fc,SE i> PHILIPS INTERNATIONAL m 711Qfl2b QObMlll b4H « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: Composite Transistors XN04390 Silicon NPN epitaxial planer transistor Tr1 Silicon PNP epitaxial planer transistor (Tr2) Unit: mm M Di ain sc te on na tin nc ue e/ d 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 3 2 1 0.30+0.10 –0.05 di p Pl lan nclu ea e se

Contextual Info: MITSUBISHI TRANSISTOR M ODULES QM30TB-2H MEDIUM POW ER SWITCHING U SE INSULATED TYPE • Ic • Vcex Collector current. 30A Collector-emitter voltage. 1000V DC current gain. 75 • hFE • Insulated Type

2N3441

Abstract: transistor 7150 booc power transistors 7150 Transistor
Contextual Info: 2N3441 NPN Power transistor for AF amplifiers and switching applications 2 N 3 4 4 1 is a sin g le -d iffu se d N P N silic o n transistor in a T O - 6 6 case. T h e collector is electrically co n n e c te d to the case. T h e transistor 2 N 3 4 4 1 is particularly suitable for

Contextual Info: j SAM SUNG SE M IC O N D U C T O R INC MPSL01 14E D | 7 ^ 1 4 3 00073^0 â J 'T NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Em lttsr V ilta fl« : Vcio=120V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C)

philips ID 27

Abstract: hjb surface mount 100-P BUK482-60A
Contextual Info: PHILIPS INTERNATIONAL b SE T> • ?HDa2b DObmt.3 Philips Semiconductors N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device Is intended for use in automotive and general purpose

WS300

Contextual Info: KSE44H SERIES NPN EPITAXIAL SILICON TRANSISTOR GEN ERAL PU RPO SE POW ER APPLICATION AND SW ITCHING • Low Collector-Emitter Saturation Votage : VCE sat = 1V (MAX) @ 8 A • Fast Switching Speeds ABSO LUTE MAXIMUM RATINGS Characteristic Collector-Emitter Voltage

tpq2907

Contextual Info: ALLEGRO MICROSYSTEMS INC 8 5 1 4 0 1 9 S P R A GU E. T3 D • 05G433Ô GGD3ÔD7 3 ■ ALGR S E M I C O N D S / ICS 93 D 0 3 8 0 7 3 SE R IE S TPQ QUAD TRANSISTOR ARRAYS SERIES TPQ QUAD TRANSISTOR ARRAYS O P R A G U E SERIES TPQ quad transistor arrays ^ are general-purpose silicon tran sisto r arrays

Contextual Info: Contran Devices. Inc MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR* * FORMERLY 63 CONTACT METALLIZATION B a se and emitter: > 50.000 A Aluminum Collector: Gold (Polished silicon or "C hrom e Nickel S ilv er" also available)

539 MOTOROLA transistor

Abstract: LT4700 transistor rf m 2528 Transistor motorola 513 552 transistor motorola 52604 MOTOROLA 03460
Contextual Info: 12E 0 I b3b72S4 aoa?24S T | M OTGRCLA SC MOTOROLA T - U -X I XSTRS/R F SE M IC O N D U C T O R TECHNICAL DATA LT4700 The RF Line N P N Silicon High Frequency Transistor 1C = 50 mA HIGH FREQUENCY TRANSISTOR NPN SILICON . designed primarily for use in low noise, small-signal amplifiers in satellite down con­

Contextual Info: Power Transistor Arrays PUB4114 PU4114 Silicon NPN triple diffusion planar type For power amplification and switching Complementary to PUB4214 (PU4214) Unit: mm • Features 25.3±0.2 4.0±0.2 0.8±0.25 0.5±0.15 1.0±0.25 di p Pl lan nclu ea e se pla m d m des

Contextual Info: * FAIRCHII.D SE M IC O N D U C TO R February 1997 i NDH833N N-Channel Enhancement Mode Field Effect Transistor General Description Features SuperSOT -8 N-Channel enhancement mode power field • 7.1 A, 20 V. effect transistors are produced using Fairchild's proprietary,

pa 2030a

Abstract: 2SC4520 QGQ711G K 2038
Contextual Info: SANYO SE MI COND UC TO R CORP 2SC4520 7*H707b Q0Q711G 1 22E D T ~ 3 5 ~ n % NPN Epitaxial Planar Silicon Transistor 2038 High-Speed Switching Applications 3I39 F ea tu res . Adoption o f FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage

2N4036

Abstract: R/ON 4037
Contextual Info: FAIRCHILD SE MI CONDUCTOR 3469674 FA IR C H ILD SEMICONDUCTOR ^ FAIRCHILD 84D 2N4036/2N4037 D • r-z? -^ PNP G eneral Purpose Transistor A Schlum berger Com pany PACKAGE 2N4036 2N4037 ABSOLUTE M AXIM UM RATINGS Note 1 Temperatures Storage Tem perature O perating Ju n ctio n Tem perature

POWERLINE 4 PRO

Contextual Info: Si GEC P L ES SE Y SEPTEMBER 1997 SEMI CO NDUC TOR S ADVANCE INFORMATION DS4738-2.1 ITS13C06 POWERLINE N-CHANNEL IGBT WITH ULTRAFAST DIODE The ITS13C06 is a robust n-channel, enhancement mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range of high voltage

bup4

Contextual Info: MAE D 6133167 DDDOmfl DD3 SEM EFA BL HIGH POWER DIE w - ^ ~ DIFFUSIO N SEMELAB DIFFUSED B Y SE M E F A B ISMLB LTD 1 G135 chip family The G 1 3 5 chip family is an NPN bipolar multiepitaxial planar transistor intended for applications requiring fast switching, low saturation, high power

Contextual Info: m 2N1487 \ \ SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N1487 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O - 3 MAXIMUM RATINGS V lc 6.0 A Ib 3.0 A ce SE A T N G PLAN t 40 V P diss 75 W @ Tc = 25 °C Tj -65 °C to +200 °C

siemens 230 98 O

Abstract: siemens 230 siemens EC 230 98 siemens 230 98 a1105 T-39-13
Contextual Info: 47E D 053SbOS 0051755 7 B I S I E G SBEMENS SIEMENS AKTIENGE SE LLS CH AF 7 ^ 3 9 - 0 BUZ 230 SIPMOS Power MOS Transistor Vos /„ •O S o n = 1000 V = 5.5 A = 2.0 fi • N channel • FREDFET • Enhancement mode • Package: TO-204AA (TO -3)1) Type

Contextual Info: Composite Transistors XP0611FH XP611FH Silicon PNP epitaxial planer transistor 0.2±0.05 4 1 2 5° 3 (0.65) (0.65) 1.3±0.1 2.0±0.1 di p Pl lan nclu ea e se pla m d m des ne ain ain foll htt visit d te t o p:/ fo /w llo dis disc nan enan wing ww wi co on ce c fo

2SA850

Abstract: TRANSISTOR 2SA850 1729H 2SC1721 2SA854 2SA933
Contextual Info: - 5 - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

vno300m

Abstract: 2SC2382 epa 2391 2SA103 THB 6 2411 175mhz 12.5v 40w te 2395 138B 138D 2SA1028
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

616A TRANSISTOR

Abstract: 2sD586A 2SD736A transistor 669A transistor 669A 649A 2SD674A 2SD738 2Sd824A 2SD877 616a
Contextual Info: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English