2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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C10535E
Abstract: C11531E fb1l3n
Contextual Info: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • Up to 0.7 A current drive available • On-chip bias resistor • Low power consumption during drive
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XC6SLX16-CSG324
Abstract: ch7301 DVI VHDL DVI VHDL xilinx ch7301 CHRONTEL 7301 Xilinx XPS Thin Film Transistor(TFT) Controller TFT controller XC4VLX25-FF668-10 a/ch7301 DVI VHDL DS695
Contextual Info: XPS Thin Film Transistor TFT Controller (v2.00a) DS695 September 16, 2009 Product Specification 0 0 Introduction LogiCORE Facts The XPS Thin Film Transistor (TFT) controller is a hardware display controller IP core capable of displaying 256k colors. The XPS TFT controller
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ds695ch-7301xc6slx16-csg324ch7301 dvi vhdl+7dvi vhdlxilinx ch7301chrontel 7301 xilinxxps thin film transistor(tft) controllertft controllerxc4vlx25-ff668-10a/ch7301 dvi vhdl
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sf 128 transistor
Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47
Contextual Info: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.
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sc73p2602sc73c16sf 128 transistortransistor sf 128+7triode 8050marking p53 transistoric marking k52sc73p16bd 8050 transistorpart marking k48marking k47
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FB1F3P
Abstract: ic marking P30 FB1A4M marking P32 transistor transistor marking p30
Contextual Info: DATA SHEET COMPOUND TRANSISTOR FB1 SERIES ON-CHIP RESISTOR NPN SILICON EPITAXIAL TRANSISTOR FOR MID-SPEED SWITCHING PACKAGE DRAWING Unit: mm FEATURES • Up to 0.7 A current drive available 2.8±0.2 0.4 +0.1 –0.05 • On-chip bias resistor • Low power consumption during drive
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sc-59fb1f3pic marking p30fb1a4m+2marking p32 transistortransistor marking p30
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ic 4PC
Abstract: 115b1
Contextual Info: GaAs IRED a PHOTO-TRANSISTOR TLP320,-2,-4 TENTATIVE DATA T L P 3 2 0 U nit in mm T E L E C O M M U N IC A T IO N TLP320 OFFICE M A C H IN E ~ A T ELEP H O N E USE E Q U IP M E N T 3 The TOSHIBA TLP320, -2 and -4 consists of a photo-transistor optically coupled to a gallium arsenide infrared em itting diode.
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tlp320tlp320-2tlp320-4150ma+35000vrmic 4pc115b1
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12vdc motor forward reverse control diagram
Abstract: star delta wiring diagram motor start y VFAS1 igbt based induction furnace circuit diagram toshiba electric motor data sheet 90kW treadmill motor controller free circuit diagram of treadmill 5kw inverter circuit diagram 12-pulse induction furnace diagram wiring mitsubishi elevator
Contextual Info: Transistor Inverter High-performance Inverter TOSVERT Flexible for you For your Commercial facilities, offices and factories • Feature: Reduce high-frequency noise*1, Reduce harmonics*1 • Applications: Washing machines, Treadmill, Showcase refrigerators, Medical equipment,
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12vdc motor forward reverse control diagramstar delta wiring diagram motor start yvfas1igbt based induction furnace circuit diagram+6toshiba electric motor data sheet 90kwtreadmill motor controllerfree circuit diagram of treadmill5kw inverter circuit diagram12-pulse induction furnacediagram wiring mitsubishi elevator
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2SB1132PT
Abstract: 2SB1132 marking P32 transistor
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1132PT SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89
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2sb1132ptsc-62/sot-89sc-62002sb1132+1marking p32 transistor
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2SB1132GP
Contextual Info: CHENMKO ENTERPRISE CO.,LTD 2SB1132GP SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 1 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89
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uPC2581
Abstract: uPC2002 2sd1557 uPA67C uPB582 upc1237 uPC317 2P4M PIN DIAGRAM 2SC4328 uPC157
Contextual Info: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8
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TRANSISTOR p50
Abstract: p13 transistor P41 transistor transistor p13 P40 transistor p21 transistor transistor P32 25 p23 transistor transistor p31 transistor p11
Contextual Info: eSHP170COB Application Notes eSHP170COB 1. eSHP170COB Diagram: Connect DC Power to this connector Typical Value: 22p DAC Output ROSC (Typical: 100KΩ) Crystal: 2MHz Use this resistor to adjust bias current, current limitation, or to correct voice distortion with transistor when the
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eshp170cobeshp170ap-esh-0005transistor p50+9p13 transistorp41 transistortransistor p13p40 transistorp21 transistortransistor p32 25p23 transistortransistor p31transistor p11
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sc5 s dc 6v relay
Abstract: P48D-70-600 UPD66010 UPD7752 AC03E uPD7520 uPA1601 UPD70208H uPD72020 uPD16503
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device/ Consumer-Use High Frequency Device 7 Optical Device 8 Packages 9 Index 10 October 1997
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corpora1-504-2860x10679ejev0sg00sc5 s dc 6v relayp48d-70-600+8upd66010upd7752ac03eupd7520upa1601upd70208hupd72020upd16503
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PS2501 optocoupler
Abstract: PS2S01-1
Contextual Info: HIGH ISOLATION VOLTAGE SINGLE TRANSISTOR TYPE MULTI OPTOCOUPLER SERIES PS2501-1 ,-2,-4 PS2501L-1,-2,-4 FEATURES_ DESCRIPTION • PS2501-1, -2, -4 and PS2501L-1, -2, -4 are optically coupled isolators containing a GaAs light emitting diode and an NPN
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n
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transistor c3909
Abstract: pt 2358 Voltmeter Gan hemt transistor x band of38dBm transistor DB p16 CGH40025F ID4002 Cree Microwave Gan hemt transistor
Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per millimeter of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
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appnote-006transistor c3909pt 2358voltmeter+7gan hemt transistor x bandof38dbmtransistor db p16cgh40025fid4002cree microwavegan hemt transistor
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Contextual Info: Not recommended for new design. Alternative is FZT789A DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR Features N • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70m at 3A High DC Current Gain hFE > 200 at IC = 2A
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transistor p98
Abstract: P99 transistor transistor nc p79 p88 transistor Gan hemt transistor 100 p38 transistor transistor be p88 p115 WR35 1/SMD bm p57
Contextual Info: APPLICATION NOTE Thermal Optimization of GaN HEMT Transistor Power Amplifiers Using New Self-heating Large-signal Model Introduction Gallium nitride power transistors have very high RF power densities which range from 4 to 12 watts per mm of gate periphery depending on operating drain voltage. Even though GaN/AlGaN on SiC
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cgh40025fappnote-006transistor p98p99 transistor+8transistor nc p79p88 transistorgan hemt transistor100 p38 transistortransistor be p88p115wr351/smd bm p57
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MAT02FH
Abstract: mat02specifications OP07 "direct replacement" MAT02 MAT02A MAT02E MAT02EH MAT04 MA5325 MAT-02
Contextual Info: ANALOG DEVICES Low Noise, Matched Dual Monolithic Transistor MAT02 PIN CONNECTION FEATURES Low Offset Voltage: 50 jjlV max Low Noise Voltage at 100 Hz, 1 mA: 1.0 nV/VHz max High Gain hFE : 500 min at lc = 1 mA 300 min at lc = 1 pA Excellent Log Conformance: rBE - 0.3 ft
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mat02lm194/394mat02fd0b047b+9mat02fhmat02specificationsop07 "direct replacementmat02amat02emat02ehmat04ma5325mat-02
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Contextual Info: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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Contextual Info: DPLS325E LOW VCE SAT PNP SURFACE MOUNT TRANSISTOR N EW PRODU CT Features • • • • • • • • Epitaxial Planar Die Construction Low Collector-Emitter Saturation Resistance RCE(SAT) = 70mΩ at 3A High DC Current Gain hFE > 200 at IC = 2A Complementary NPN Type Available (DNLS320E)
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Contextual Info: SERIES 215 TRANSISTOR SOCKET INTERCONNECTION SPECIALISTS DIA. .370 [9 .4 0 ] OIA. I .100 [2 .5 4 ] 8 PIN 4 PIN 3 PIN - .230 [5 .8 4 ] OIA. .370 [9 .4 0 ] DIA. _L —r .100 [2 .5 4 ] -75 10 PIN CONTACT TYPE S: STANDARD DIP IN SER TIO N FORCE WITHDRAWAL FORCE
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uPD3599
Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of
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x10679ejfv0sg00upd3599transistor nec 2sk2396mos fet buz 444+7mc-7643nec 3s4m4305 regulator necrd2.4s equivalent2sc4305 nec2sa1441 necnpn transistor sst 117
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