TRANSISTOR 7800 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

A7800

Abstract: 34G3S ic 7800 kf 1300
Contextual Info: FZ 1200 R 16 KF 1 Transistor Transistor Thermische Eigenschaften Thermal properties RthJC DC, pro Baustein / per module 0,016 RthCK pro Baustein / per module 0,008 Elektrische Eigenschaften Electrical properties Höchstzulässige W erte Maximum rated values

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

A 7800

Abstract: a7800
Contextual Info: FZ 1200 R 12 KF 1 Transistor Thermische Eigenschaften Transistor Rthjc Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 1200 A Ic Thermal properties DC, pro B a u ste in /p e r m odule 0,016 °C/W pro Baustein / per module 0,008 °C/W

Contextual Info: FZ 1200 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 1200 A 0,008 °C/W pro Baustein / per module

Contextual Info: FZ 1200 R 12 KF 1 Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Transistor Transistor Elektrische Eigenschaften Electrical properties VcES Maximum rated values 1200 V 1200 A 0,008 °C/W pro Baustein / per module

A 7800

Abstract: a7800
Contextual Info: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module

A7800

Abstract: a 7800
Contextual Info: FZ 1200 R 16 KF 1 Transistor Transistor Therm ische Eigenschaften Therm al properties Rthjc DC, pro B a u ste in /p e r module 0,016 °C/W Elektrische Eigenschaften Electrical properties H öchstzulässige W erte V ces Maximum rated values RthCK pro B a u ste in /p e r module

8778401

Abstract: 8001601 HI-0201 8GHz transceiver specification MD-80 MD80C88/883 JM38510 HS 3182 HS 3282 MD82c82
Contextual Info: Military ICs 12 DIGITAL/MILITARY/SPACE PRODUCT TREES ANALOG Selection Guides Defense Selection Chart Analog Signal Processing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12-2 Arrays, Transistor. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

nec 7800

Abstract: D1880 NP90N055PDH NP90N055NDH NP90N055MDH 90N055 MP-25ZP
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP90N055MDH, NP90N055NDH, NP90N055PDH SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP90N055MDH, NP90N055NDH, NP90N055PDH are N-channel MOS Field Effect Transistors designed for high current switching applications.

Contextual Info: Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level 1 • Qualified according to JEDEC for target applications

PG-TO262-3

Contextual Info: Type IPI020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications

MG50Q1BS1

Contextual Info: TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR MG50Q1BS1 Unit in mm High Power Switching Applications Motor Control Applications • High Input Impedance • High Speed: tf = 0.5jxs Max. • Low Saturation Voltage : VCE(sat) = 4.0V (Max.) • Enhancement-Mode

Contextual Info: Type IPP020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications

CMPA2560025F

Abstract: 920pF
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Abstract: CMPA2560025F-TB c08bl242x
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2735075F

Abstract: IDQ Freq Products RF-35-0100-CH
Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Abstract: CMPA2560025F-TB
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Abstract: CMPA2560025F-TB JESD22 A114D
Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA2560025F 25 W, 2500 - 6000 MHz, GaN MMIC Power Amplifier Cree’s CMPA2560025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

CMPA2560025F

Contextual Info: CMPA2560025D 25 W, 2.5 - 6.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP2560025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium

Contextual Info: CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Cree’s CMPA2735075F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium