IPI020N06N Search Results
IPI020N06N Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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IPI020N06N |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 29A TO262-3 | Original | 9 | |||
IPI020N06NAKSA1 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 29A TO262-3 | Original | 562.89KB |
IPI020N06N Price and Stock
Infineon Technologies AG IPI020N06NAKSA1MOSFET N-CH 60V 29A/120A TO262 |
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IPI020N06NAKSA1 | Bulk |
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IPI020N06NAKSA1 | 20 | 1 |
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IPI020N06NAKSA1 | 1 |
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IPI020N06NAKSA1 | 818 |
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IPI020N06N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: Type IPI020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel |
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IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N | |
PG-TO262-3Contextual Info: Type IPI020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications |
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IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N 50K/W PG-TO262-3 | |
ipi020nContextual Info: Type IPI020N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 2.0 mW • Superior thermal resistance ID 120 A QOSS 119 nC QG(0V.10V) 106 nC • N-channel |
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IPI020N06N IEC61249-2-21 PG-TO262-3 020N06N 50K/W ipi020n | |
igbt welding machine scheme
Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
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TLE4957C
Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
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