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    IPB014N06N Search Results

    IPB014N06N Datasheets (2)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPB014N06N
    		Infineon Technologies FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 34A TO263-7 Original PDF 9
    IPB014N06NATMA1
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 60V 34A TO263-7 Original PDF 588.06KB
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    IPB014N06N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPB014N06NATMA1

    MOSFET N-CH 60V 34A/180A TO263-7
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    DigiKey () IPB014N06NATMA1 Cut Tape 4,164 1
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    IPB014N06NATMA1 Digi-Reel 4,164 1
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    IPB014N06NATMA1 Tape & Reel 4,164 1,000
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    Avnet Americas IPB014N06NATMA1 Tape & Reel 17 Weeks 1,000
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    IPB014N06NATMA1 700 1
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    IPB014N06NATMA1 Cut Strips 700 17 Weeks 1
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    Infineon Technologies AG IPB014N06NE8197ATMA1

    IPB014N06NE8197ATMA1
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    Verical IPB014N06NE8197ATMA1 850 96
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    Infineon Technologies AG IPB014N06N

    Power Field-Effect Transistor, 34A I(D), 60V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263
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    Vyrian IPB014N06N 347
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    IPB014N06N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Package to 263-7

    Abstract: IPB014N06N 014n06 014N06N
    Contextual Info: Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS on ,max 1.4 mW • Superior thermal resistance ID 180 A • N-channel, normal level 1) • Qualified according to JEDEC for target applications


    Original     		IPB014N06N IEC61249-2-21 O263-7 014N06N 50K/W Package to 263-7 IPB014N06N 014n06 014N06N PDF

    Contextual Info: Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level 1 • Qualified according to JEDEC for target applications


    Original     		IPB014N06N IEC61249-2-21 O263-7 014N06N PDF

    Contextual Info: Type IPB014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS on ,max 1.4 mW • Superior thermal resistance ID 180 A • N-channel, normal level • Qualified according to JEDEC for target applications


    Original     		IPB014N06N IEC61249-2-21 O263-7 014N06N PDF

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    Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    TLE4957C

    Abstract: SLE66R35E7 SAK-XC2060M-104F80L AA ESD204 SAF-XC2268M-72F66L AA xc2336 tle7242 TLE5041 2EDL23N06 BTN7970
    Contextual Info: Ask Infineon. Get connected with the answers. Infineon offers its toll-free 0800/4001 service hotline as one central number, available 24/7 in English, Mandarin and German. Our global connection service goes way beyond standard switchboard services by offering qualified support on the phone. Call us!


    Original     		PDF