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    014N06 Search Results

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    Infineon Technologies AG BSC014N06NSATMA1

    Trans MOSFET N-CH 60V 100A 8-Pin TDSON FL T/R - Product that comes on tape, but is not reeled (Alt: 47Y7993)
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    Avnet Americas () BSC014N06NSATMA1 Ammo Pack 1
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    BSC014N06NSATMA1 Tape & Reel 52 Weeks 5,000
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    Mouser Electronics BSC014N06NSATMA1 68
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    Newark () BSC014N06NSATMA1 Tape & Reel 15,734 100
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    BSC014N06NSATMA1 Cut Tape 15,734 5
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    Bristol Electronics BSC014N06NSATMA1 285
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    TME BSC014N06NSATMA1 1
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    NexGen Digital BSC014N06NSATMA1 15,447
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    Rutronik BSC014N06NSATMA1 Tape & Reel 5,000 5,000
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    Chip 1 Exchange BSC014N06NSATMA1 3,350
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    EBV Elektronik BSC014N06NSATMA1 53 Weeks 5,000
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    Win Source Electronics BSC014N06NSATMA1 214,830
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    Infineon Technologies AG BSC014N06NSSCATMA1

    Transistor Power MOSFET N-Channel 60V 261A 8-Pin PG-WSON-8-2 - Product that comes on tape, but is not reeled (Alt: 82AH4486)
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    Avnet Americas () BSC014N06NSSCATMA1 Ammo Pack 1
    • 1 $5.85
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    • 100 $2.76
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    BSC014N06NSSCATMA1 Tape & Reel 52 Weeks 4,000
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    Newark () BSC014N06NSSCATMA1 Cut Tape 10,285 1
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    BSC014N06NSSCATMA1 Tape & Reel 10,285 100
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    Rochester Electronics BSC014N06NSSCATMA1 8 1
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    TME BSC014N06NSSCATMA1 4,000
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    EBV Elektronik BSC014N06NSSCATMA1 53 Weeks 4,000
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    Win Source Electronics BSC014N06NSSCATMA1 46,070
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    onsemi NVMYS014N06CLTWG

    Power MOSFET 60 V, 14.5mO, 42 A, Single N-Channel LFPAK4(Pb-Free) - Bulk (Alt: 38AH7312)
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    Avnet Americas () NVMYS014N06CLTWG Bulk 1
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    NVMYS014N06CLTWG Tape & Reel 54 Weeks 3,000
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    Mouser Electronics NVMYS014N06CLTWG
    • 1 $2.04
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    Newark () NVMYS014N06CLTWG Bulk 41 1
    • 1 $1.61
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    NVMYS014N06CLTWG Tape & Reel 3,000
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    NVMYS014N06CLTWG Tape & Reel 100
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    NVMYS014N06CLTWG Cut Tape 5
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    Rochester Electronics NVMYS014N06CLTWG 53 1
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    TME NVMYS014N06CLTWG 1
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    Avnet Silica NVMYS014N06CLTWG 53 Weeks 3,000
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    EBV Elektronik NVMYS014N06CLTWG 53 Weeks 3,000
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    Infineon Technologies AG BSC014N06NSSCATMA2

    - Tape and Reel (Alt: BSC014N06NSSCATMA2)
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    Avnet Americas BSC014N06NSSCATMA2 Tape & Reel 4,000
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    Mouser Electronics BSC014N06NSSCATMA2
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    Renesas Electronics Corporation RBE014N06R2SZN6#HB0

    - Tape and Reel (Alt: RBE014N06R2SZN6#HB0)
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    Avnet Americas RBE014N06R2SZN6#HB0 Tape & Reel 30 Weeks, 2 Days 3,000
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    014N06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    PG-TDSON-8

    Abstract: th-50 6500 PG-TDSON-8 FL
    Contextual Info: Type 014N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. • 100% avalanche tested • Superior thermal resistance • N-channel 1 • Qualified according to JEDEC for target applications


    Original
    bsc014n06nsiec61249-2-21014n06nspg-tdson-8+2th-50 6500pg-tdson-8 fl PDF

    Contextual Info: Type 014N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 1.45 mW • Superior thermal resistance ID 100 A QOSS 100 nC 89 nC • N-channel • Qualified according to JEDEC for target applications


    Original
    bsc014n06nsiec61249-2-21014n06ns PDF

    Package to 263-7

    Abstract: IPB014N06N 014n06 014N06N
    Contextual Info: Type 014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS on ,max 1.4 mW • Superior thermal resistance ID 180 A • N-channel, normal level 1) • Qualified according to JEDEC for target applications


    Original
    ipb014n06niec61249-2-21o263-7014n06n+350k/wpackage to 263-7014n06 PDF

    014N06NS

    Abstract: BSC014N06NS bsc014n06 014n06
    Contextual Info: Type 014N06NS OptiMOSTM Power-Transistor Features Product Summary • Optimized for high performance SMPS, e.g. sync. rec. VDS 60 V • 100% avalanche tested RDS on ,max 1.45 mW • Superior thermal resistance ID 100 A QOSS 100 nC 89 nC • N-channel 1)


    Original
    bsc014n06nsiec61249-2-21014n06nsbsc014n06+1014n06 PDF

    Contextual Info: Type 014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification • 100% avalanche tested • Superior thermal resistance • N-channel, normal level 1 • Qualified according to JEDEC for target applications


    Original
    ipb014n06niec61249-2-21o263-7014n06n PDF

    Contextual Info: Type 014N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS on ,max 1.4 mW • Superior thermal resistance ID 180 A • N-channel, normal level • Qualified according to JEDEC for target applications


    Original
    ipb014n06niec61249-2-21o263-7014n06n PDF