TRANSISTOR 2N697 Search Results

TRANSISTOR 2N697 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8	Datasheet

TRANSISTOR 2N697 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N697 Contextual Info: 2N697 Silicon N-P-N Planar Transistor. 1.61 Transistors Bipolar Silicon NPN Power Tra. Page 1 of 1 Enter Your Part # Home Part Number: 2N697 Online Store 2N697 Diodes Silicon N -P-N Planar Transistor. Transistors Enter code INTER3 at checkout.* Integrated Circuits	Original	2n697 o-205ad com/2n697	PDF
BC108 characteristic Abstract: BC237 c 2026 y transistor msc2295 marking 7m SOT-323 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors MUN5211DW1T1 SERIES NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a	Original	mun5211dw1t1 reduc218a msc1621t1 msc2404 +11msd1819a mv1620 mv1624 mv1636 mv1640 mv1642 bc108 characteristic bc237 c 2026 y transistor msc2295 marking 7m sot-323	PDF
BC237 Abstract: equivalent to BC177 2n6431 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MUN5111DW1T1 SERIES Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a monolithic	Original	mun5111dw1t1 reduc218a msc1621t1 msc2404 +9msd1819a mv1620 mv1624 mv1636 mv1640 mv1642 bc237 equivalent to bc177 2n6431	PDF
BC237 Abstract: level shifter 2N5401 2771 040 0002 MUN5214T1 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device	Original	sc-70/sot-323 spa218a msc1621t1 msc2404 +10msd1819a mv1620 mv1624 mv1636 mv1640 mv1642 bc237 level shifter 2n5401 2771 040 0002 mun5214t1	PDF
transistor BF245 Abstract: BC237 transistor motorola 2n3053 MMBF5486 TRANSISTOR REPLACEMENT FOR 2N3053 855 sot363 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA14T1 NPN SmallĆSignal Darlington Transistor Motorola Preferred Device This NPN small signal darlington transistor is designed for use in switching applications, such as print hammer, relay, solenoid and lamp drivers. The	Original	ot-223 pzta14t1 inch/1000 u218a +10msc1621t1 msc2404 msd1819a mv1620 transistor bf245 bc237 transistor motorola 2n3053 mmbf5486 transistor replacement for 2n3053 855 sot363	PDF
BC237 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its	Original	red218a msc1621t1 msc2404 msd1819a +7mv1620 mv1624 mv1636 mv1640 mv1642 mv1644 bc237	PDF
Transistor 2N2905A Abstract: BC237 applications of Transistor BC108 transistor c-1000 transistor equivalent 2n5551 2N2904 transistor TO92 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network MUN5311DW1T1 SERIES Motorola Preferred Devices The BRT Bias Resistor Transistor contains a single transistor with a	Original	mun5311dw1t1 red218a msc1621t1 msc2404 +12msd1819a mv1620 mv1624 mv1636 mv1640 mv1642 transistor 2n2905a bc237 applications of transistor bc108 transistor c-1000 transistor equivalent 2n5551 2n2904 transistor to92	PDF
SOT23 JEDEC standard orientation pad size Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is	Original	ot-223 pzt2222at1 pzt2907at1 inch/1000 +9pzt2907at3 inch/4000 uni218a msc1621t1 sot23 jedec standard orientation pad size sot-23 npn marking code vd bc237 p2f sot-23 transistor 2n5458	PDF
BC237 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN5111T1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its	Original	70/sot spa218a msc1621t1 msc2404 +7msd1819a mv1620 mv1624 mv1636 mv1640 mv1642 bc237	PDF
BC237 Abstract: BC238B MOTOROLA Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value	Original	pzta42t1 318e-04 o-261aa msc1621t1 +8msc2404 msd1819a mv1620 mv1624 mv1636 mv1640 bc237 bc238b motorola	PDF
transistor 2N5458 Abstract: BC237 BC848 2N930 NPN transistor FREE Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MUN2211T1 SERIES NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its	Original	red218a msc1621t1 msc2404 msd1819a +10mv1620 mv1624 mv1636 mv1640 mv1642 mv1644 transistor 2n5458 bc237 bc848 2n930 npn transistor free	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2cy17 2cy18 2cy19 2cy20 +122cy21 500ma 2n2222a 338 tfk 949 2n1167 halbleiter index transistor ad161 bsy19 al103 ac128 tfk 404 tfk 931	PDF
BF245 TRANSISTOR Abstract: transistor BF245 BC237 transistor motorola 2n3053 Transistor BC107b motorola transistor 2N3819 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZTA64T1 PNP SmallĆSignal Darlington Transistor Motorola Preferred Device This PNP small-signal darlington transistor is designed for use in preamplifiers input applications or wherever it is necessary to have a high input impedance.	Original	ot-223 pzta64t1 inch/1000 msc1621t1 +10msc2404 msd1819a mv1620 mv1624 bf245 transistor transistor bf245 bc237 transistor motorola 2n3053 transistor bc107b motorola transistor 2n3819	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500ma 240mwf y51 h 120c bd124 +8kt368 bfq59 silec semiconductors bd214 al103 afy18 bd192 mm1711	PDF

BC237 Abstract: bc547 marking transistor Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon General Purpose Amplifier Transistor 2SA1774 This PNP transistor is designed for general purpose amplifier applications. This device is housed in the SOT–416/SC–90 package which is designed for low power	Original	416/sc inch/3000 2sa1774 msc1621t1 +8msc2404 msd1819a mv1620 mv1624 mv1636 mv1640 bc237 bc547 marking transistor	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan	sx3704 ap239 transistor 80139 8c547 +66c131c in2222a 2n50b 2n2064 radio ac176 ac126 sft353	PDF
EQUIVALENT FOR zt751 Abstract: zt751 TRANSISTOR zt751 BC237 transistor BF245 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PZT751T1 PNP Silicon Planar Epitaxial Transistor Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for	Original	pzt751t1 inch/1000 pzt751t3 inch/4000 +11msc1621t1 msc2404 msd1819a mv1620 mv1624 mv1636 equivalent for zt751 zt751 transistor zt751 bc237 transistor bf245	PDF
RCA H 541 Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483 Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK	OCR Scan	rca h 541 2t312 2n2654 as218 transistor +6gex 74a diode germanium 1n283 k3004 tfk diode ac132 ti-483	PDF
motorola p1f Abstract: hie for bc547b BC237 transistor motorola 2n3053 Marking P1F 619 sc-59 P1F marking MARKING CODE Zi sot363 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT2222AT1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is designed for	Original	ot-223 pzt2907at1 pzt2222at1 inch/1000 +12pzt2222at3 inch/4000 unit218a msc1621t1 motorola p1f hie for bc547b bc237 transistor motorola 2n3053 marking p1f 619 sc-59 p1f marking marking code zi sot363	PDF
2N2222 MPS2222 npn transistor Abstract: transistor BF245 transistor 2N3819 SOT-223 number code book FREE BC237 2N4410 Transistor marking 651 sot363 transistor MPS5771 transistor bf391 Transistor BC107 motorola Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Silicon Planar Epitaxial Transistor PZT651T1 Motorola Preferred Device This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for	Original	pzt651t1 inch/1000 pzt651t3 inch/4000 +16p218a msc1621t1 msc2404 msd1819a mv1620 mv1624 2n2222 mps2222 npn transistor transistor bf245 transistor 2n3819 sot-223 number code book free bc237 2n4410 transistor marking 651 sot363 transistor mps5771 transistor bf391 transistor bc107 motorola	PDF
2N2464 Abstract: TO-59 Package TO114 package SIS 672 2N2210 transistor 2N2210 TO111 package TO61 package 2N3725 ultra low noise NPN transistor Contextual Info: SME D GENERAL TRANSISTOR CORP BTaöODl 00QG07M Q General Transistor Corporation 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 SMALL SIGNAL TRANSISTORS NPN General Purpose Typ» No, Plot (mW) VCEO	OCR Scan	3t5fl001 2n720a 2n915 2n916 +162n956 2n2221 2n2221a 2n2222 2n2222a 2n3700 2n2464 to-59 package to114 package sis 672 2n2210 transistor 2n2210 to111 package to61 package 2n3725 ultra low noise npn transistor	PDF
MMFT6661T1 Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	tap218a msc1621t1 msc2404 msd1819a +14mv1620 mv1624 mv1636 mv1640 mv1642 mv1644 mmft6661t1 72v6 bc237 2n3819 fet bc309b dl 3 y sot-223 msc2295 ucl 82	PDF
TSOP 48 thermal resistance Abstract: BC237 Transistor BC107b motorola transistor 2N3819 BCY72 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT960T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	mmft96218a msc1621t1 msc2404 msd1819a +11mv1620 mv1624 mv1636 mv1640 mv1642 mv1644 tsop 48 thermal resistance bc237 transistor bc107b motorola transistor 2n3819 bcy72	PDF
FET 2N5458 Abstract: BC547 fet BC237 TO261AA Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as	Original	mmft107218a msc1621t1 msc2404 msd1819a +10mv1620 mv1624 mv1636 mv1640 mv1642 mv1644 fet 2n5458 bc547 fet bc237 to261aa	PDF

TRANSISTOR 2N697 Search Results

TRANSISTOR 2N697 Result Highlights (5)

TRANSISTOR 2N697 Datasheets Context Search

2N697

BC108 characteristic

BC237

BC237

transistor BF245

BC237

Transistor 2N2905A

SOT23 JEDEC standard orientation pad size

BC237

BC237

transistor 2N5458

2N2222A 338

BF245 TRANSISTOR

y51 h 120c

BC237

sx3704

EQUIVALENT FOR zt751

RCA H 541

motorola p1f

2N2222 MPS2222 npn transistor

2N2464

MMFT6661T1

TSOP 48 thermal resistance

FET 2N5458