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    TPCP8401 Search Results

    TPCP8401 Datasheets (3)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    TPCP8401
    Toshiba MOSFET TPC Series Original PDF 123.42KB 5
    TPCP8401
    Toshiba Power MOSFET Selection Guide with Cross Reference Data Original PDF 1.45MB 45
    TPCP8401(TE85L,F)
    Toshiba FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 20V PS-8 Original PDF 10

    TPCP8401 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS Ⅲ / π-MOS Ⅵ TPCP8401 ○ Switching Regulator Applications ○ Load Switch Applications Unit: mm 0.33±0.05 • Lead(Pb)-Free • Multi-chip discrete device; built-in P channel MOS FET for main


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    tpcp8401 PDF

    Toshiba 8401

    Abstract: tpcp8401
    Contextual Info: TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS Ⅲ / π-MOS Ⅵ TPCP8401 Switching Regulator Applications Load Switch Applications • • • 0.33±0.05 0.05 M A 5 8 2.4±0.1 • • Unit: mm Lead(Pb)-Free Multi-chip discrete device; built-in P channel MOS FET for main


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    tpcp8401toshiba 8401 PDF

    TPCP8401

    Contextual Info: TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type P Channel U-MOSⅣ / N Channel U-MOSⅢ TPCP8401 2.9±0.1 0.3 +0.1/−0.05 0.025 M 8 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating P Channel N Channel 0.24+0.10 −0.09


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    tpcp8401 PDF

    TPCP8401

    Contextual Info: TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS Ⅲ / π-MOS Ⅵ TPCP8401 ○ Switching Regulator Applications ○ Load Switch Applications Unit: mm • Lead(Pb)-Free • Multi-chip discrete device; built-in P channel MOS FET for main


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    tpcp8401 PDF

    Contextual Info: TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS Ⅲ / π-MOS Ⅵ TPCP8401 ○ Switching Regulator Applications ○ Load Switch Applications Unit: mm 0.33±0.05 • Lead(Pb)-Free • Multi-chip discrete device; built-in P channel MOS FET for main


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    tpcp8401 PDF

    TPCP8401

    Contextual Info: TPCP8401 TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type U-MOS Ⅲ / π-MOS Ⅵ TPCP8401 ○ Switching Regulator Applications ○ Load Switch Applications 0.33±0.05 Lead(Pb)-Free 0.05 M A Multi-chip discrete device; built-in P channel MOS FET for main


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    tpcp8401 PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    5252 f 1009 4-pintpc 8028marking s3h sot363tk8a50d equivalent+6tk6a65d equivalent2sk4112tpca8030-htoshiba laptop charging circuit diagramtk80a08k3tpca*8025 PDF

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Contextual Info: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    bce0030cs-167bce0030dlm2804+9marking 513 sod-323land dpu 230toshiba diode 1ss416 footprint5252 f solarsot23 2fvtah8n401kic sj 4558zener diode reference guidern4983 PDF

    2SK2056

    Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
    Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1


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    bce0017b2sk20562sk16032sk1603 datasheet+7toshiba "ultra high speed" diode 1atransistor 2sk16032sk3561 equivalent2sk2915 equivalent1045y2sk3569 equivalent2sk1078 PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    bce0017fe-28831bce0017g2sk3567 equivalent+92sk3569 equivalenttpca*8023tk8a50d equivalent2sk20562sk3878 equivalenttpca80232sk941 equivalent2sk3561 equivalent2sk1603 PDF

    tpc8118

    Abstract: SVI 2004 A toshiba f5d tpc8026 tpc8109 oks2c toshiba f5b TPC8028 MARKING TPC8107 SOP8 MOSFET MARKING STP
    Contextual Info: Power MOSFETs 低耐圧低Ronシリーズ 2007年 2月 Copyright 2007, Toshiba Corporation. 低Ron 低耐圧U-MOSの技術トレンド 30 2 Ron*A (mOhm*mm ) 25 20 15 10 Pch Nch 5 Pch IV Nch III Pch V Nch IV Pch VI Nch V or VI 2007年 2月 2 リチウムイオン電池保護回路用MOSFETトレンドマップ


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    tpcm8001-htpcm8003-htpcm8002-h2q/2007+12tpcm81021q/2007tpc8118svi 2004 atoshiba f5dtpc8026tpc8109oks2ctoshiba f5btpc8028marking tpc8107 sop8mosfet marking stp PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    sce0004lttc41162sc4118tta1586+162sa15882sc41172sa15872sc52332sc47382sa1832gt30f131gt30f124tk18a60vsmd m5 transistor 6-pinsmd transistor h2a npngt50n322marking smd pnp transistor h2agt30j12430f124tpcp8r01 PDF

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Contextual Info: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    sce0003aesm 740transistor smd t04 51d245a+7lm2804transistor smd t04solar garden light controller 4 pin2fu smd transistortransistor t04 smdpnp octal darlington transistor arrays dipwb126 PDF

    2SK3878 equivalent

    Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718
    Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)


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    2sk29632sk29622sj5082sj509+152sk36702sj3132sj3382sk20132sk21622sj3602sk3878 equivalent2sk26112sk37592sk38782sk3869toshiba power mos fet 2sj 2sk2sk38682sk3567 equivalent2sk2718 PDF

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    bcj0082bbcj0082a2sk4207to220sis+8tpca*8023tk80a08k3tpc8119tk40a08k32sk4112ssm3j16fs2sk3568tpc8a03 PDF

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    bce0082btpca*8064tk12a10k3tpca8077+72sk3567 equivalentssm3j328tpca8077-htj11a10m3tk50e06k3atpca*8077tpca8028 PDF

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    2010/9sce0004ksc-432sc1815700the+10gt30f124tpcp8r01gt30j124japanese 2sc transistor 2010smd transistor h2asmd marking 8l01tk25e06k3gt45f122gt30g124gt30f123 PDF

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    sc-432sc1815tps615tps616+11tps610transistor bc 245247ysmd transistor h2agt30g122gt35j321gt45f123marking smd pnp transistor h2agt45f122gt45f122 seriesgt30f122 PDF

    2SK3566 equivalent

    Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent
    Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    bce0017es-167bce0017f2sk3566 equivalent+92sk3562 equivalent2sk3561 equivalent2sk3878 equivalent2sk3568 equivalent2sk3911 equivalent2sk941 equivalenttpc8118 equivalent replacementtpc81182sk3767 equivalent PDF

    2SK1603

    Abstract: 2SK3561 equivalent un 1044 2SJ238 2sk1603 datasheet 2SK2039 2SK2030 2SK2056 2SK1487 2SK1078
    Contextual Info: 2004-3 .TW M .CO .TW 00Y 1 . OM W WW .100Y.C M.TW O W W WW .100Y.C M.TW T . O W OM W Y.C WW .100Y.C M.TW T . O W OM W.1 WW .100Y.C M.TW WW .100Y.C M.TW O W O W WW .100Y.C M.TW W WW .100Y.C M.TW T . O W M WW 00Y.CO .TW .CO .TW WW .100Y.C M.TW Y W O W OM W.1


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    bce0017a2sk16032sk3561 equivalentun 1044+72sj2382sk1603 datasheet2sk20392sk20302sk20562sk14872sk1078 PDF

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Contextual Info: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    bce0082atpc8118 equivalent replacementssm3j307tzener diode smd 071 a01 PDF

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Contextual Info: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


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    tc7sz126fusc-88aot-353bcj0052e+11bcj0052dtpca*8030lm2804tpca*80362sk2033tpc8037sj 88a diodetpca8028tpc8a03tc4w53fuic sj 4558 PDF

    TPCP8F01

    Abstract: TPCP8701 AC97 TB31296FT TMPR4937XBG-300 TPCP8401 TPCP8402 TPCP8501 TC35654 SRAM 45nm
    Contextual Info: 東芝半導体情報誌アイ 2003年2月号 II N N FF O O RR M M AA TT II O ON N 1 INFORMATION 300ミリウェハー対応製造ラインを建設 システムLSI拠点の大分工場とメモリ拠点の四日市工場に 当社は今後の半導体事業におけるシステムLSIおよびメモリの競争力強化を


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    15sramtmpr4937xbg-300tx49/h3tpcp8f01+8tpcp8701ac97tb31296fttpcp8401tpcp8402tpcp8501tc35654sram 45nm PDF

    2sk4110

    Abstract: 2SK4106 2SK4111 2SK3561 equivalent 2sk3797 equivalent 2SK2996 equivalent 2SK2843 equivalent 2sK2961 equivalent 2SK4112 2SK3799 equivalent
    Contextual Info: 2007-3 PRODUCT GUIDE Power MOSFETs 1.Features and Structure. 2 2.New Power MOSFET Products . 3


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    bce0017ds-167bce0017e2sk4110+92sk41062sk41112sk3561 equivalent2sk3797 equivalent2sk2996 equivalent2sk2843 equivalent2sk2961 equivalent2sk41122sk3799 equivalent PDF