TO247 4L Search Results

C03DE220HV

Abstract: STC03DE220HV
Contextual Info: STC03DE220HV Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ω Features . VCS ON IC RCS(ON) 1V 3A 0.33 Ω • Low equivalent on resistance ■ Very fast-switch, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω 1 23 4 TO247-4L HV

C03DE220HV

Abstract: 12VBS stc03de220hv
Contextual Info: STC03DE220HV Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ω Features . VCS ON IC RCS(ON) 1V 3A 0.33 Ω • Low equivalent on-resistance ■ Very fast switching, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω 1 23 4 TO247-4L HV

Contextual Info: STC03DE220HV Hybrid emitter switched bipolar transistor ESBT 2200 V - 3 A - 0.33 Ω Features . VCS ON IC RCS(ON) 1V 3A 0.33 Ω • Low equivalent on-resistance ■ Very fast switching, up to 150 kHz ■ Very low CISS driven by RG = 4.7 Ω 23 4 1 TO247-4L HV

TL 1074 CT

Abstract: megamos 46 08 09 6 a 1712 mosfet IXTH20N55 25N50 f g megamos
Contextual Info: I X Y S IDE C0RP » 1 4L,âfc,52b 0000344 fl □ IX Y S M e ga M O S’“ FETs IXTH20N60, 55 IXTM20N60, 55 MAXIMUM RATINGS Sym. IXTH20N55 IXTM20N55 IXTH20N60 IXTM20N60 Drain-Source Voltage 1 Vd s s 550 600 Drain-Gate Voltage (R q s = 1-OMfl) (1) Vd g r

19n50

Abstract: megamos 48 a 1712 mosfet lhi 778 megamos N-channel MOSFET 800v to-247 IXTM19N50 LHi 978 megamos 13 H100
Contextual Info: I X Y S CORP 10E ° 4Liflt.2ab 000035b M 1 I - 3 7 '/ S MegaMOS FETs D IX Y S IXTH19N50, 45 IXTM19N50, 45 M AXIM UM RATINGS Parameter Sym. IXTH19N45 IXTM19N45 IXTH19N50 IXTM19N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Vdgr 450 500 Vdc Drain-Gate Voltage (Rq s - 1-OMft) (1)

6n60a

Abstract: IXTM6N60 6n60 600 volt n channel power mosfet
Contextual Info: I X Y S CO RP löE D • 4L,abS2b O Q O D b l O 3 ■ IXTP6N60, IXTM6N60 □ IX Y S 6 AMPS, 600 V, 1.2S/1.5Q MAXIMUM RATINGS Parameter IXTP6N60 IXTM6N60 Sym. Drain-Source Voltage 1 Drain-Gale Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient

SOT-263

Abstract: MS-013AC 100H01
Contextual Info: Industry Name 075E04 075E05 076E03S 100H01 100H03 D2PAK D2PAK, 4-lead D2PAK, 6-lead DO-214AC DO34 DPAK I-PAK MO-150AH MS-012AA MS-013AC MS-013AD SC-43 SC-59 SC-62 SC-70 SC-73 SC-74 SC-75 SC-76 SC-79 SC-88 SC-88A SC-89 SMA SO-20 SO-24 SO-8 SSOP28 TO-126 TO-202

Contextual Info: I X Y S CORP ID E D I 4Lflba2fei D0003Ö3 7 | □IXYS T L 5 5 '- ¿ . y ADVANCED TECHNICAL DATA SHEET* „TM M OSBLOC MAXIMUM RATINGS DATA SH EET NO. 41009B IXGQ100N50Y4 IGBT MODULE T c = 25 °C unless otherwise Indicated Conditions Rating Value V cES 500

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

Contextual Info: RURG5070, RURG5080, RURG5090, RURG50100 ïU m a r r is 50A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft R JEDEC STYLE 2 LEAD TO-247 • Operating Tem p eratu

Contextual Info: I x Y s CORP ID E D | 4L,flfe.*E2b DOOD4D3 =1 | □IXYS ADVANCED TECHNICAL DATA SHEET* DATA SHEET NO. 41002D _ IXGQ75N100Y4 MOSBLOC IGBT MODULE MAXIMUM RATINGS T c = 25 °C unless otherwise Indicated Conditions

5n100

Abstract: 5N100A
Contextual Info: □IXYS Standard Power MOSFET IXTH/IXTM 5 N100 IXTH/IXTM 5 N100A vDSS ^D25 1000 V 1000 V 5A 5A DDS on 2.4 2.0 ft ft N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 1000 V v DGR Tj = 25°C to 150°C; RGS = 1 MQ 1000 V VGS V GSM

Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

Contextual Info: IXYA20N120C3HV IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs High-Speed IGBT for 20-50 kHz Switching VCES = IC110 = VCE sat  tfi(typ) = 1200V 20A 3.4V 108ns TO-263HV (IXYA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

G20N120

Abstract: IXGA20N120A3 IXGP20N120A3 IXGH20N120A3
Contextual Info: GenX3TM 1200V IGBTs VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGP20N120A3 IXGH20N120A3 Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching TO-263 AA (IXGA) G E C (Tab) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXAN0022

Abstract: KU4-499 KU4-495 KU4-498 isoplus ixys cross KU4499 isoplus ixys mounting KU3-381 4490 mosfet
Contextual Info: IXAN0022 Capitalizing on the Advantages of ISOPLUS Products Introduction IXYS Corporation offers unique power packages with internal isolation, and performance and reliability advantages. The IXYS isolated packages include ISOPLUS220TM, ISOPLUS247TM, ISOPLUS

38N60

Contextual Info: Ultra-Low VCE sat IGBT IXGH 38N60 Symbol Test Conditions VCES ^ VCGR Tj = 25°C to 150°C; RGE= 1 M fi Maximum Ratings = 25°C to 150°C 600 V 600 V v GES Continuous ±20 V v GEM Transient ±30 V ^C25 Tc = 25°C 76 A ^C90 Tc = 90°C 38 A ^CM Tc = 25°C, 1 ms

datasheet of IC 4511

Abstract: A 4503 ic 4407 ic data 4502 smd ic IC 4511 smd ic 4406 4392 ic equivalent b42 sot223 4410 smd DO-203AB Package
Contextual Info: FOD Document Numbers for Package Outlines Legend: E=Electronic Format, P=Part Marking T=Tape&Reel, F=Available on FOD, #=No.of Pages E P T F # E P T F # HEXFET 4200 UltraFast/HEXFRED 4203 Micro3 SOT-23 4301 X 1 SMB 4381 X X Micro8 4302 X 1 SMC 4382 X X SO-8

MOSFET 10n60

Abstract: 10N60A ir 10n60 10N60 IXTH10N60 IXTM10N60 10N60R 3N90R
Contextual Info: I X Y S CORP IflE D • 4L,ab22b OOOObO'ï ? ■ □IXYS MAXIMUM RATINGS , 'T '2 ° 1 Parameter Sym. Drain-Source Voltage 1 Drain-Qate Voltage (RGS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient Drain Current Continuous (Tc =25°C)

Contextual Info: ! a i x Y S Preliminary data V CES IXSX50N60AU1 IXSX50N60AU1S IGBT with Diode ^C25 vw CE sat Combi Pack <?C S h o r t C ir c u it S O A C a p a b ilit y = 600 V = 75 A = 2.7 V TO-247 Hole-less SMD (50N60AU1S) G OE Symbol Test Conditions V CES T j = 25°C to 150 °C

MOSFET 11N80

Abstract: 11N80 MOSFET 14n80 ns800 13n80
Contextual Info: IXFH 11/13/14/15 N80 IXFM 11/13/14/15 N80 nixYS H iP e r F E T “ P o w e r M O S F E T IXFU/IXFM IXFH/IXFM IXFH/IXFM IXFH/IXFM N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS Family 11N80 13N80 14N80 15N80 Symbol Test Conditions VDSS VDGR Tj = 25°C to 150°C

20N120A3

Abstract: IXGH24N120C3 20N120 G20N120
Contextual Info: Preliminary Technical Information VCES = 1200V IC110 = 20A VCE sat ≤ 2.5V IXGA20N120A3 IXGH20N120A3 IXGP20N120A3 GenX3TM 1200V IGBT Ultra-low Vsat PT IGBTs for up to 3 kHz switching TO-263 (IXGA) G E Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C

IXYP20N120C3

Contextual Info: Advance Technical Information IXYP20N120C3 IXYH20N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C

Contextual Info: Advance Technical Information 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP20N120C3 IXYH20N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 20A 4.0V 108ns TO-220 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C