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    076E03S Search Results

    076E03S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SOT-263

    Abstract: MS-013AC 100H01
    Contextual Info: Industry Name 075E04 075E05 076E03S 100H01 100H03 D2PAK D2PAK, 4-lead D2PAK, 6-lead DO-214AC DO34 DPAK I-PAK MO-150AH MS-012AA MS-013AC MS-013AD SC-43 SC-59 SC-62 SC-70 SC-73 SC-74 SC-75 SC-76 SC-79 SC-88 SC-88A SC-89 SMA SO-20 SO-24 SO-8 SSOP28 TO-126 TO-202


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    075e04075e05076e03s100h01+7100h03do-214acmo-150ahms-012aams-013acms-013adsot-263 PDF

    KMZ50

    Abstract: MS-012AA BP317 SC17 Wheatstone Bridge amplifier
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ50 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 15 File under Discrete Semiconductors, SC17 1998 Mar 24 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50


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    m3d315kmz50sca57115106/00/02/pp8+4ms-012aabp317sc17wheatstone bridge amplifier PDF

    TDA3606

    Abstract: TDA3606T
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA3606 Multiple voltage regulator with battery detection Product specification Supersedes data of 1995 Dec 19 File under Integrated Circuits, IC01 1997 Jul 15 Philips Semiconductors Product specification Multiple voltage regulator with battery


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    tda3606swi31sca55547027/1200/02/pp16+1tda3606t PDF

    BP317

    Abstract: MS-012AA PHP1035
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor


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    php1035sc13bot96-1sca57+3135108/00/01/pp8bp317ms-012aa PDF

    tea1104 charger ref design

    Abstract: charger IC NiMh 4 ch AN95085 AN95085 APPLICATION NOTES nimh charger lm317 nimh lm317 BC548 and its h parameter values
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET TEA1104; TEA1104T Cost effective battery monitor and fast charge IC for NiCd and NiMH chargers Objective specification File under Integrated Circuits, IC03 1996 Feb 26 Philips Semiconductors Objective specification Cost effective battery monitor and fast


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    tea1104tea1104tscds47417021/1100/02/pp16+7tea1104 charger ref designcharger ic nimh 4 chan95085an95085 application notesnimh charger lm317nimh lm317bc548 and its h parameter values PDF

    GP 821

    Abstract: BLT61 MS-012AA
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor BLT61 PINNING FEATURES • High efficiency PIN • High gain


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    m3d315blt61ot96-1mbk187+4sca57125108/00/02/pp8gp 821ms-012aa PDF

    transistor bd139

    Abstract: philips power transistor bd139 BD139 smd transistor zi
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency


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    m3d315blt71/8ot96-1sca55+5127067/00/02/pp12transistor bd139philips power transistor bd139bd139smd transistor zi PDF

    PHN1015

    Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor Logic level FEATURES PHN1015 SYMBOL • ’Trench’ technology • Low on-state resistance • Fast switching • Low-profile surface mount package • Logic level compatible QUICK REFERENCE DATA


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    phn1015ot96-1 PDF

    PHC20512

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHC20512 Complementary enhancement mode MOS transistors Product specification Supersedes data of 1997 Jun 19 File under Discrete Semiconductors, SC13b 1997 Oct 22 Philips Semiconductors Product specification Complementary enhancement mode


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    phc20512sc13bot96-1sca55+1137107/00/03/pp20 PDF

    03ac29

    Abstract: HZG336 MS-012AA PHN103T
    Contextual Info: PHN103T N-channel enhancement mode field-effect transistor Rev. 01 — 28 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: PHN103T in SOT96-1 SO8 .


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    phn103tot96-103ac29hzg336+1ms-012aa PDF

    SI4884

    Abstract: MS-012AA
    Contextual Info: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .


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    si4884m3d315ot96-1ms-012aa PDF

    1625AM

    Contextual Info: Philips Semiconductors Product specification Transimpedance amplifier 140MHz SA5212A DESCRIPTION PIN CONFIGURATION The SA 5212A is a 14ki2 transim pedance, wideband, low noise differential output amplifier, particularly suitable for signal recovery in fiber optic receivers and in any other applications w here very low


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    140mhzsa5212a14ki21625am PDF

    PHP225

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP225 Dual P-channel enhancement mode MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification Dual P-channel enhancement


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    php225sc13bot96-1076e03s+1ms-012aa PDF

    PHP225

    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP225 Dual P-channel enhancement mode MOS transistor Product specification Supersedes data of November 1994 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification Dual P-channel enhancement


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    php225sc13bot96-1sca54+1137107/00/02/pp12 PDF

    BP317

    Abstract: MS-012AA PHP222 SC13
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 PHP222 Dual P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1998 Mar 24 File under Discrete Semiconductors, SC13 1998 Apr 01 Philips Semiconductors Preliminary specification Dual P-channel enhancement


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    m3d315php222ot96-1sca59+4135108/00/03/pp8bp317ms-012aasc13 PDF

    BP317

    Abstract: MS-012AA PHP1025
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PHP1025 P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Objective specification P-channel enhancement mode MOS transistor PHP1025


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    php1025sc13bot96-1sca57+3135108/00/01/pp8bp317ms-012aa PDF

    tja1050 c

    Abstract: SJA1000 TX0 Dominant smd transistor fq TJA1050T model MGS375 PCA82C250 TJA1050 TJA1050T TJA1050U
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET TJA1050 High speed CAN transceiver Preliminary specification File under Integrated Circuits, IC18 1999 Sep 27 Philips Semiconductors Preliminary specification High speed CAN transceiver TJA1050 FEATURES GENERAL DESCRIPTION • Fully compatible with the “ISO 11898” standard


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    tja1050285002/01/pp16tja1050 csja1000 tx0 dominant+6smd transistor fqtja1050t modelmgs375pca82c250tja1050ttja1050u PDF

    SAB6456

    Abstract: prescaler 256 IC02 98 Functional 1 prescaler 64 MS-012AA SAB6456T divide-by-256
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET SAB6456 SAB6456T Sensitive 1 GHz divide-by-64/divide-by-256 switchable prescaler Product specification File under Integrated Circuits, IC02 June 1986 Philips Semiconductors Product specification Sensitive 1 GHz divide-by-64/divide-by-256


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    sab6456sab6456tdivide-by-64/divide-by-256sab6456/sab6456t+6divide-by-64divide-by-256prescaler 256ic02 98 functional 1prescaler 64ms-012aa PDF

    philips capacitor 1000uf 25V

    Abstract: TDA3674AT 1.50 MKT MDA961 TDA3672 TDA3674 TDA3674T TDA3676
    Contextual Info: INTEGRATED CIRCUITS DATA SHEET TDA3674 Low dropout voltage/quiescent current 5 V voltage regulator with enable Preliminary specification File under Integrated Circuits, IC01 1999 Sep 29 Philips Semiconductors Preliminary specification Low dropout voltage/quiescent current 5 V


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    tda3674545002/01/pp16philips capacitor 1000uf 25vtda3674at+51.50 mktmda961tda3672tda3674ttda3676 PDF

    865 RF transistor

    Abstract: RF Transistor reference "RF Power Modules" microwave transistor 03 Power Transistor MS-012AA SOT391A EU2A sot147a 1117 sot223
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Package outlines RF & Microwave Power Transistors and RF Power Modules 1998 Feb 17 File under Discrete Semiconductors, SC19a Philips Semiconductors RF & Microwave Power Transistors and RF Power Modules Package outlines SO8: plastic small outline package; 8 leads; body width 3.9 mm


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    sc19aot96-1ot502a865 rf transistor+9rf transistor referencerf power modulesmicrowave transistor 03power transistorms-012aasot391aeu2asot147a1117 sot223 PDF

    8002 AUDIO amplifier

    Abstract: 8002 audio amplifier 8 pin NE5532 SE663 JIS B 0041 SL003 NE5532N NE5532D8 professional audio power amplifier schematics NE5532AN
    Contextual Info: Product specification Internally-compensated dual low noise operational amplifier DESCRIPTION Q PIN CONFIGURATIONS The 5532 is a dual high-performance low noise operational amplifier. Compared to most of the standard operational amplifiers, such as the 1458, it shows better noise performance, improved output drive


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    ne/se5532/5532aot38-4e/se5532/5532a53-0580a+117110fl2ej8002 audio amplifier8002 audio amplifier 8 pinne5532se663jis b 0041sl003ne5532nne5532d8professional audio power amplifier schematicsne5532an PDF

    hx 36

    Abstract: MLC716 MSA925 Thin-film magnetic resistance "Magnetic Field Sensor" magnetic sensor circuit diagram mgdb04 KMZ11B1 MS-012AA
    Contextual Info: Philips Semiconductors Preliminary specification Magnetic field sensor KMZ11B1 DESCRIPTION The K M Z 1 1B1 is a sensitive m agnetic field sensor, em ploying the m agnetoresistive effe ct of thin-film perm alloy. Its properties enable this se n so r to be used in a


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    kmz11b1ot96-1076e03sms-012+8hx 36mlc716msa925thin-film magnetic resistancemagnetic field sensormagnetic sensor circuit diagrammgdb04ms-012aa PDF

    MS-012AA

    Abstract: TDA3606 TDA3606T
    Contextual Info: Philips Semiconductors Preliminary specification Multiple voltage regulator with battery detection TDA3606 FEATURES GENERAL DESCRIPTION • One Vp-state controlled regulator The TDA3606 is a low power voltage regulator. It contains: • Regulator and reset outputs operate during load dump


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    tda36067110aetms-012aatda3606t PDF

    PowerMOS Transistors

    Abstract: 075E05 MS-012AA SO24 SSOP16 SSOP24
    Contextual Info: Philips Semiconductors PowerMOS transistors Package outlines PACKAGE OUTLINES Package SOT23 SOT54 TO-92 SOT54variant (TO-92variant) SOT78 (TO-220AB) SOT89 SOT96-1 (SO8) SOT137-1 (SO24) SOT186 (TO-220 exposed tabs) SOT186A (TO-220) SOT223 SOT226 (low-profile TO-220)


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    ot54varianto-92varianto-220abot96-1+11ot137-1ot186o-220ot186aot223powermos transistors075e05ms-012aaso24ssop16ssop24 PDF