KMZ50
Abstract: MS-012AA BP317 SC17 Wheatstone Bridge amplifier
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ50 Magnetic field sensor Preliminary specification Supersedes data of 1996 Nov 15 File under Discrete Semiconductors, SC17 1998 Mar 24 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ50
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HZG469
Abstract: PHN203
Contextual Info: PHN203 Dual N-channel TrenchMOS logic level FET Rev. 03 — 26 January 2004 M3D315 Product data 1. Product profile 1.1 Description Dual logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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GP 821
Abstract: BLT61 MS-012AA
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor BLT61 PINNING FEATURES • High efficiency PIN • High gain
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transistor bd139
Abstract: philips power transistor bd139 BD139 smd transistor zi
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency
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SI4884
Abstract: MS-012AA
Contextual Info: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .
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UZZ7000T
Abstract: MV3008
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 UZZ7000T Trigger amplifier with two wire current interface Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Trigger amplifier with two wire current interface FEATURES UZZ7000T
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si4800
Abstract: 03af85 MS-012AA Si4800 philips
Contextual Info: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .
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BP317
Abstract: MS-012AA PHP222 SC13
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 PHP222 Dual P-channel enhancement mode MOS transistor Preliminary specification Supersedes data of 1998 Mar 24 File under Discrete Semiconductors, SC13 1998 Apr 01 Philips Semiconductors Preliminary specification Dual P-channel enhancement
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KMZ41
Abstract: M3D315 MS-012AA SC17
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ41 Magnetic field sensor Product specification Supersedes data of 1996 Dec 11 File under Discrete Semiconductors, SC17 1998 Mar 26 Philips Semiconductors Product specification Magnetic field sensor KMZ41 DESCRIPTION
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PHK12NQ03LT
Contextual Info: PHK12NQ03LT N-channel TrenchMOS logic level FET Rev. 02 — 02 March 2004 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance
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VK-2003
Abstract: VK2003 IEC 1094-4 KMZ41
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ43T Magnetic field sensor Preliminary specification Supersedes data of 2000 Aug 24 2003 Mar 26 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ43T DESCRIPTION PINNING The KMZ43T is a sensitive magnetic field sensor,
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UZZ7001T
Abstract: MLD402
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 UZZ7001T Trigger amplifier with open collector output Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Trigger amplifier with open collector output FEATURES UZZ7001T PINNING • Differential input trigger amplifier
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MBL215
Abstract: KMZ43 KMZ43T Wheatstone Bridge KMZ41 IEC 1094-4
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ43T Magnetic field sensor Preliminary specification Supersedes data of 2000 Aug 24 2003 Mar 26 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ43T DESCRIPTION PINNING The KMZ43T is a sensitive magnetic field sensor,
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PHK5NQ15T
Contextual Info: PHK5NQ15T TrenchMOS standard level FET Rev. 01 — 20 January 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK5NQ15T in SOT96-1 SO8 .
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PHK12NQ10T
Contextual Info: PHK12NQ10T TrenchMOS standard level FET Rev. 01 — 15 September 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounting package
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PHK24NQ04LT
Contextual Info: PHK24NQ04LT TrenchMOS logic level FET Rev. 01 — 12 September 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK24NQ04LT in SOT96-1 SO8 .
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MS-012AA
Abstract: PHP206
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 PHP206 Dual P-channel enhancement mode MOS transistor Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 05 Philips Semiconductors Objective specification Dual P-channel enhancement mode MOS transistor
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PHK13N03LT
Abstract: 11611
Contextual Info: PHK13N03LT TrenchMOS logic level FET M3D315 Rev. 01 — 23 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK13N03LT in SOT96-1 SO8 .
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HZG469
Abstract: Si9410DY
Contextual Info: Si9410DY N-channel TrenchMOS logic level FET Rev. 03 — 23 January 2004 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 2. Features • Low on-state resistance ■ Fast switching
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KMZ41
Abstract: sensor o2 -a2 Wheatstone Bridge BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 KMZ41 Magnetic field sensor Preliminary specification Supersedes data of 1998 Mar 26 2000 Apr 18 Philips Semiconductors Preliminary specification Magnetic field sensor KMZ41 DESCRIPTION The KMZ41 is a sensitive magnetic field sensor,
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MS-012AA
Abstract: PHK12NQ03LT
Contextual Info: PHK12NQ03LT TrenchMOS logic level FET Rev. 01 — 22 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1technology. Product availability: PHK12NQ03LT in SOT96-1 SO8 .
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Si9925DY
Contextual Info: Si9925DY N-channel enhancement mode field-effect transistor Rev. 01 — 20 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9925DY in SOT96-1 SO8 .
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MS-012AA
Abstract: Si9956DY
Contextual Info: Si9956DY N-channel enhancement mode field-effect transistor Rev. 01 — 16 July 2001 M3D315 Product data 1. Description Dual N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9956DY in SOT96-1 SO8 .
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Si9410DY
Contextual Info: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .
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