HZG469
Abstract: PHN203
Contextual Info: PHN203 Dual N-channel TrenchMOS logic level FET Rev. 03 — 26 January 2004 M3D315 Product data 1. Product profile 1.1 Description Dual logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features
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Original
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PHN203
M3D315
OT96-1
HZG469
PHN203
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HZG469
Abstract: Si9410DY
Contextual Info: Si9410DY N-channel TrenchMOS logic level FET Rev. 03 — 23 January 2004 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 2. Features • Low on-state resistance ■ Fast switching
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Original
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Si9410DY
M3D315
OT96-1
MBK187
MBB076
HZG469
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PDF
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HZG469
Abstract: PSMN008-75B PSMN008-75P 75b diode 75p diode
Contextual Info: PSMN008-75P/75B TrenchMOS standard level FET Rev. 03 — 08 January 2004 Product data 1. Product profile 1.1 Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in each package.
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Original
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PSMN008-75P/75B
OT404,
HZG469
PSMN008-75B
PSMN008-75P
75b diode
75p diode
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