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PSMN008-75B
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NXP Semiconductors
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PSMN008-75B - Trenchmos standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 8.5@10V mOhm; VDSmax: 75 V |
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202.62KB |
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PSMN008-75B
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Philips Semiconductors
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SMD, TrenchMOS Power Amp., 75V 75A 230W, MOS-FET N-Channel enhanced |
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100.77KB |
13 |
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PSMN008-75B
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Philips Semiconductors
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N-channel enhancement mode field-effect transistor |
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131.23KB |
14 |
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PSMN008-75B,118
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NXP Semiconductors
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PSMN008-75 - TRANSISTOR 75 A, 75 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
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202.61KB |
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PSMN008-75B,118
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NXP Semiconductors
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Trenchmos standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 8.5@10V mOhm; VDSmax: 75 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
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100.75KB |
13 |
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PSMN008-75B/T3
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NXP Semiconductors
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Trenchmos standard level FET - Configuration: Single N-channel ; ID DC: 75 A; Qgd (typ): 50 nC; RDS(on): 8.5@10V mOhm; VDSmax: 75 V |
Original |
PDF
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100.75KB |
13 |