PHK12NQ10T Search Results
PHK12NQ10T Datasheets (4)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PHK12NQ10T | Philips Semiconductors | Transistor Mosfet N-CH 100V 11.6A 8SO T/R | Original | 73.48KB | 12 | ||
| PHK12NQ10T,118 | NXP Semiconductors | PHK12NQ10T - N-channel TrenchMOS standard level FET, SOT96-1 Package, Standard Marking, Reel Pack, SMD, 13" | Original | 184.98KB | 12 | ||
| PHK12NQ10T,518 | NXP Semiconductors | TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 12 A; Qgd (typ): 9 nC; RDS(on): 28@10V mOhm; VDSmax: 100 V; Package: SOT96-1 (SO8); Container: Reel Dry Pack, SMD, 13" | Original | 185.05KB | 12 | ||
| PHK12NQ10T/T3 | NXP Semiconductors | TrenchMOS standard level FET - Configuration: Single N-channel ; ID DC: 12 A; Qgd (typ): 9 nC; RDS(on): 28@10V mOhm; VDSmax: 100 V | Original | 185.05KB | 12 |
PHK12NQ10T Price and Stock
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NXP Semiconductors PHK12NQ10T518Power MOSFET N Channel 100 V 116 A 00237 ohm SOIC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PHK12NQ10T518 | 1,415 |
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Nexperia PHK12NQ10TPower Field-Effect Transistor, 11.6A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PHK12NQ10T | 12,404 |
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NXP Semiconductors PHK12NQ10T,518Power Field-Effect Transistor, 11.6A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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PHK12NQ10T,518 | 11,493 |
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Get Quote | |||||||