Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers
    Manufacturer Search

    MBK187 Search Results

    SF Impression Pixel

    MBK187 Price and Stock

    Banner Engineering Corp

    Banner Engineering Corp EZA-MBK-18 (72057)

    EZA-MBK-18 EZ SCREEN ACCESSORY RETROFITD-J SAFESC, EZA SERIES
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS EZA-MBK-18 (72057) Bulk 3 Weeks 1
    • 1 $129.22
    • 10 $129.22
    • 100 $129.22
    • 1000 $129.22
    • 10000 $129.22
    		Get Quote

    MBK187 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HZG469

    Abstract: PHN203
    Contextual Info: PHN203 Dual N-channel TrenchMOS logic level FET Rev. 03 — 26 January 2004 M3D315 Product data 1. Product profile 1.1 Description Dual logic level N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features


    Original     		phn203m3d315ot96-1hzg469 PDF

    GP 821

    Abstract: BLT61 MS-012AA
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT61 UHF power transistor Preliminary specification Supersedes data of 1996 Feb 05 1998 Jan 28 Philips Semiconductors Preliminary specification UHF power transistor BLT61 PINNING FEATURES • High efficiency PIN • High gain


    Original     		m3d315blt61ot96-1mbk187+4sca57125108/00/02/pp8gp 821ms-012aa PDF

    transistor bd139

    Abstract: philips power transistor bd139 BD139 smd transistor zi
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 BLT71/8 UHF power transistor Product specification Supersedes data of 1996 Feb 06 1997 Oct 14 Philips Semiconductors Product specification UHF power transistor BLT71/8 PINNING - SOT96-1 FEATURES • High efficiency


    Original     		m3d315blt71/8ot96-1sca55+5127067/00/02/pp12transistor bd139philips power transistor bd139bd139smd transistor zi PDF

    HZG336

    Abstract: PHN103T 03ac29
    Contextual Info: PHN103T N-channel enhancement mode field-effect transistor Rev. 02 — 28 April 2004 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS technology. 1.2 Features • TrenchMOS™ technology


    Original     		phn103thzg33603ac29 PDF

    SI4884

    Abstract: MS-012AA
    Contextual Info: SI4884 TrenchMOS logic level FET Rev. 02 — 12 April 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: SI4884 in SOT96-1 SO8 .


    Original     		si4884m3d315ot96-1ms-012aa PDF

    PSMN038-100K

    Contextual Info: PSMN038-100K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.


    Original     		psmn038-100kot96-1 PDF

    UZZ7000T

    Abstract: MV3008
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 UZZ7000T Trigger amplifier with two wire current interface Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Trigger amplifier with two wire current interface FEATURES UZZ7000T


    Original     		m3d315uzz7000t613520/01/pp8mv3008 PDF

    si4800

    Abstract: 03af85 MS-012AA Si4800 philips
    Contextual Info: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .


    Original     		si4800m3d315ot96-103af85+2ms-012aasi4800 philips PDF

    PHK12NQ03LT

    Contextual Info: PHK12NQ03LT N-channel TrenchMOS logic level FET Rev. 02 — 02 March 2004 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Low on-state resistance


    Original     		phk12nq03ltm3d315ot96-1mbb076 PDF

    UZZ7001T

    Abstract: MLD402
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D315 UZZ7001T Trigger amplifier with open collector output Preliminary specification 2000 Sep 05 Philips Semiconductors Preliminary specification Trigger amplifier with open collector output FEATURES UZZ7001T PINNING • Differential input trigger amplifier


    Original     		m3d315uzz7001t613520/01/pp8mld402 PDF

    BY206

    Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		blw34by206c102fbzy88-c3v3+3bzy88c-3v3100a-2ro-c-px-50uhf amplifier design transistor PDF

    BLW80

    Abstract: transistor rf m 1104
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW80 UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the


    Original     		blw80transistor rf m 1104 PDF

    transistor D 2578

    Abstract: BLW90 transistor Common Base configuration transistor rf m 1104 4312 020 36640 transistor 4312 philips carbon film resistor UHF TRANSISTOR UHF transistor GHz philips transistor handbook
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW90 UHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification UHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor suitable for transmitting


    Original     		blw90sc08atransistor d 2578transistor common base configuration+7transistor rf m 11044312 020 36640transistor 4312philips carbon film resistoruhf transistoruhf transistor ghzphilips transistor handbook PDF

    PHK5NQ15T

    Contextual Info: PHK5NQ15T TrenchMOS standard level FET Rev. 01 — 20 January 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK5NQ15T in SOT96-1 SO8 .


    Original     		phk5nq15tm3d315ot96-1 PDF

    PHK12NQ10T

    Contextual Info: PHK12NQ10T TrenchMOS standard level FET Rev. 01 — 15 September 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 1.2 Features • Surface mounting package


    Original     		phk12nq10tm3d315ot96-1 PDF

    PHK24NQ04LT

    Contextual Info: PHK24NQ04LT TrenchMOS logic level FET Rev. 01 — 12 September 2003 M3D315 Product data 1. Product profile 1.1 Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK24NQ04LT in SOT96-1 SO8 .


    Original     		phk24nq04ltm3d315ot96-1 PDF

    MDA380

    Abstract: 4312 020 36642 MDA385 BLU99 TRANSISTOR SL 100 "2222 352"
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLU99 BLU99/SL UHF power transistor Product specification March 1993 Philips Semiconductors Product specification BLU99 BLU99/SL UHF power transistor DESCRIPTION FEATURES N-P-N silicon planar epitaxial transistor primarily intended for use in


    Original     		blu99blu99/slot122amda380+44312 020 36642mda385transistor sl 1002222 352 PDF

    PHK13N03LT

    Abstract: 11611
    Contextual Info: PHK13N03LT TrenchMOS logic level FET M3D315 Rev. 01 — 23 June 2003 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHK13N03LT in SOT96-1 SO8 .


    Original     		phk13n03ltm3d315ot96-111611 PDF

    HZG469

    Abstract: Si9410DY
    Contextual Info: Si9410DY N-channel TrenchMOS logic level FET Rev. 03 — 23 January 2004 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. 2. Features • Low on-state resistance ■ Fast switching


    Original     		si9410dym3d315ot96-1mbk187+2mbb076hzg469 PDF

    MS-012AA

    Abstract: PHK12NQ03LT
    Contextual Info: PHK12NQ03LT TrenchMOS logic level FET Rev. 01 — 22 March 2002 M3D315 Product data 1. Product profile 1.1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1technology. Product availability: PHK12NQ03LT in SOT96-1 SO8 .


    Original     		phk12nq03ltm3d315ot96-1ms-012aa PDF

    PSMN085-150K

    Contextual Info: PSMN085-150K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.


    Original     		psmn085-150kot96-1 PDF

    PSMN005-30K

    Contextual Info: PSMN005-30K TrenchMOS logic level FET Rev. 01 — 6 March 2002 Product data 1. Description SiliconMAX™ products use the latest Philips TrenchMOS™ technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package. Product availability:


    Original     		psmn005-30kot96-1mbk187 PDF

    DC TO DC convertor

    Abstract: PSMN165-200K
    Contextual Info: PSMN165-200K N-channel enhancement mode field-effect transistor Rev. 01 — 16 January 2001 Product specification 1. Description SiliconMAX 1 products use the latest Philips TrenchMOS™2 technology to achieve the lowest possible on-state resistance in a SOT96-1 SO8 package.


    Original     		psmn165-200kot96-1dc to dc convertor PDF

    Si9410DY

    Contextual Info: Si9410DY N-channel enhancement mode field-effect transistor Rev. 02 — 05 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si9410DY in SOT96-1 SO8 .


    Original     		si9410dym3d315ot96-1 PDF