IXTH20N55 Search Results

IXTH20N55 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXTH20N55		IXYS	MegaMOS Power MOSFETs	Scan	PDF	716.65KB	8
IXTH20N55		Unknown	FET Data Book	Scan	PDF	60.59KB	1
IXTH20N55A		Unknown	FET Data Book	Scan	PDF	60.59KB	1

IXTH20N55 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: IXTH20N55 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)550 V(BR)GSS (V)20 I(D) Max. (A)20 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300 Minimum Operating Temp (øC)	Original	IXTH20N55	PDF
TL 1074 CT Abstract: megamos 46 08 09 6 a 1712 mosfet IXTH20N55 25N50 f g megamos Contextual Info: I X Y S IDE C0RP » 1 4L,âfc,52b 0000344 fl □ IX Y S M e ga M O S’“ FETs IXTH20N60, 55 IXTM20N60, 55 MAXIMUM RATINGS Sym. IXTH20N55 IXTM20N55 IXTH20N60 IXTM20N60 Drain-Source Voltage 1 Vd s s 550 600 Drain-Gate Voltage (R q s = 1-OMfl) (1) Vd g r	OCR Scan	IXTH20N55 IXTH20N60 IXTM20N55 IXTM20N60 00D0344 IXTH20N60, IXTM20N60, 50-600V, O-247 TL 1074 CT megamos 46 08 09 6 a 1712 mosfet 25N50 f g megamos	PDF
1xys Abstract: IXTH50N10 IXTH20n60 to-247 IXTH25N50 HP 3800 IXTH12N50A IXTH25N45 IXTH12N50 IXTH25N50A IXTH15N80 Contextual Info: 268 f ï m € tt ft * Vds £ fé Vg s 11 13=25=0 Id less Pd Id s s Vgs th j * /CH Vd g (V) ( T a = 2 5 cC ) g fs Io(on) Ciss Coss Crss (typ) (typ) (typ) (max) (max) (max) Vd s (pF) (pF) (pF) (V) V g s =0 Vgs min /CH Vgs % '14 & F Ds(on) Vd s = or €	OCR Scan	IXTH12N50 O-247 IXTH12N50A IXTH15N70 UTH15N70A O-204 IKTM3N80A IXTM3N90 1xys IXTH50N10 IXTH20n60 to-247 IXTH25N50 HP 3800 IXTH25N45 IXTH25N50A IXTH15N80	PDF
megamos Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95 Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4	OCR Scan	O-204 O-247 megamos f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95	PDF
IXFH15N100 Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80 Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP	Original	IRFP354 O-247 IRFP360LC 2N3049DIE 2C3049 O-204AA/TO-3 IXTM20N55A IXFH15N100 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80	PDF
ID 48 Megamos Abstract: megamos megamos 48 f g megamos IXTZ35N25MB IXTH24N45 0117 megamos IXTP15N25MA ixth24n50ma IXTP22N20MA Contextual Info: I X Y S CORP IflE D • 4bfib£5b QD00SS7 3 ■ J frrorFE Ts' and LIMOFETsw IXYS Is developing new integrated solutions that simplify the logic-topower interface while adding safe guard protection features to the power device. Because of its process compatibility with CMOS, HDMOS	OCR Scan		PDF