1xys
Abstract: IXTH50N10 IXTH20n60 to-247 IXTH25N50 HP 3800 IXTH12N50A IXTH25N45 IXTH12N50 IXTH25N50A IXTH15N80
Contextual Info: 268 f ï m € tt ft * Vds £ fé Vg s 11 13=25=0 Id less Pd Id s s Vgs th j * /CH Vd g (V) ( T a = 2 5 cC ) g fs Io(on) Ciss Coss Crss (*typ) (*typ) (*typ) (max) (max) (max) Vd s (pF) (pF) (pF) (V) V g s =0 Vgs min * /CH Vgs % '14 & F Ds(on) Vd s = or €
|
OCR Scan
|
ixth12n50o-247ixth12n50aixth15n70+12uth15n70ao-204iktm3n80aixtm3n901xysixth50n10ixth20n60 to-247ixth25n50hp 3800ixth25n45ixth25n50aixth15n80
|
PDF
|
SIEMENS 800
Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80
|
Original
|
o-220abo-218o-204204ac+7o-238aasiemens 800950p to-247 packagemth6n852sk351irfaf3021n60n
|
PDF
|
IXFH15N100
Abstract: 2N3051 IXFX15N100 IXFH40N30 IXFM6N90 IRFP450R IXTH24N50L IXTH26N50 IXFH20N50 IXFH9N80
Contextual Info: STI Type: IRFP354 Notes: Breakdown Voltage: 450 Continuous Current: 14 RDS on Ohm: 0.35 Trans Conductance Mhos: 5.9 Trans Conductance A: 8.4 Gate Threshold min: 2.0 Gate Threshold max: 4.0 Resistance Switching ton: 14 TYP Resistance Switching toff: 89 TYP
|
Original
|
irfp354o-247irfp360lc2n3049die+132c3049o-204aa/to-3ixtm20n55aixfh15n1002n3051ixfx15n100ixfh40n30ixfm6n90irfp450rixth24n50lixth26n50ixfh20n50ixfh9n80
|
PDF
|