TI 506 TRANSISTOR Search Results

transistor BF 506

Abstract: bf506 wl SOT-23
Contextual Info: TELEFUNKEN ELECTRONIC filC D • A'^QQ'Jb 0005513 'i ■ AL6G ^ 7 2 / ~ TTIdilFlLDMDSIKl electronic | B F 506 Creative Technologies * Silicon PNP RF Transistor Applications: Oscillator-, mixer and uncontrolled pre-amplifier stages up to 300 MHz Features: • Small feedback capacitance

transistor C639

Abstract: transistor C635 c639 transistor C639 w
Contextual Info: BC635/637/639 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS • Complement to BC635/638/640 ABSOLUTE MAXIMUM RATINGS T, = 25°C Characteristic Collector Emitter Voltage: BC635 at R b e = 1Kohm : BC637 : BC639 Collector Emitter Voltage: BC635

Contextual Info: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA*25t: C haracteristic Collector-Base Voltage Collector-Emitter Voltage Em itter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 251

Contextual Info: DTA144TE DTA144TUA DTA144TKA Digital transistor, PNP, with 1 resistor Features Dimensions Units : mm available in EMT3 (EM3), UMT3 (UMT, SC-70), and SMT3 (SMT, SC-59) packages DTA144TE (EMT3) 0 .7 ± û . I bias resistor consists of a thin-film resistor which is completely isolated,

BDT42

Abstract: BDT41 BDT42B IEC134 TIP42 TIP42 equivalent T3321
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • bbS3T31 0 0 n 7 2 T ■ BDT42;A BDT42B;C T-33-ÄJ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type, P-N-P complements are

K 3911

Abstract: BUK451-60A BUK451-60B T0220AB
Contextual Info: Philips Components D ata sheet status Preliminary specification date of issue March 1991 PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: BAI F4Z Com pound Transistor * P M J m W -f& M m ip - ii : m m * (R i = 22 k£2) OBN1F4Z t n > 7 ‘ ij y > ^ U Tf4:fflT"§ it,. ( T a = 25 °C ) m g »§• %- /E fS ip- i£ VljBO 60 V ■3 v 9 -y ■x . i -, 9H H 7 ir£ V e to 50 V - -9 * V kbo 5 V 3 u

Contextual Info: BF620 BF622 _ _^ SILICON EPITAXIAL TRANSISTORS* • For video output stages N-P-N transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers. P-N-P complements are BF621 and BF623 respectively.

Contextual Info: Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue A p ril 1 9 9 5 BSP220 P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA FEATURES PARAMETER SYMBOL • Direct interface to C-MOS, TTL, etc. “Vds

Contextual Info: Die no. D-25 NPN Darlington transistor These are epitaxial planar NPN silicon Darlington transistors. Dimensions Units : mm TO-92 Features • available in TO-92 package, for packaging information, see page 448 • collector-to-emitter breakdown voltage, BVCES = 30 V (min) at

Contextual Info: BF583 BF585 BF587 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in T 0 -2 0 2 plastic package, intended fo r use in video o u tp u t stages in black-andw h ite and in c o lo u r television receivers. QUICK REFERENCE D ATA BF583 BF585 BF587 v CBO max.

sgsp358

Abstract: tr/pcb-3/SGSP358
Contextual Info: SGS-THOMSON SGSP358 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR • • • • TYPE V DSS ^DS on SGSP358 50 V 0.3 a Id 7A HIGH SPEED SWITCHING APPLICATIONS GENERAL PURPOSE ULTRA FAST SWITCHING EASY DRIVE FOR REDUCED COST AND SIZE INDUSTRIAL APPLICATIONS:

Contextual Info: N AMER PHILIPS/DISCRETE bTE ]> bb53R31 0030610 Tib « A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

2SD78

Abstract: 2SD73 2s096 2SB481 2SD315 2SD79 2SD96 2SD102 2SD103 2sb48
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

Contextual Info: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special

SEF442

Abstract: c230 diode SEF440
Contextual Info: S G S-THOMSON S 7T2ci237 QQlâQD'i : 73C 17 506 D T- 3 f . N -C H A N N EL POW ER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Channel enhancement mode Power-Mos field effect transistors. A BSO LU TE MAXIMUM RATINGS

s149

Abstract: transistor Siemens 14 S S 92
Contextual Info: SIEMENS SIPMOS Small-Signal Transistor • • • • • • • B SS 149 Vos 200 V ID 0.35 A ^DS on 3.5 Q N channel Depletion mode High dynamic resistance Available grouped in FGS(th) Type Ordering Code Tape and Reel Inform ation PinC onfigu ration Marking

MC 140 transistor

Abstract: "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a
Contextual Info: N AMER PHILIPS/DISCRETE j ObE D • PowerMÔS transistor ^53131 0014015 5 m BÜZ355 r - 3cj - l 3 May 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: ROHM CO LTD N7 > V 4DE D 000SA04 8 E3RHM $ / T ransistors 2SC3969 7 - 2 1 . - 0 ¡3 S H M i £ i & 7 ° U - ^ N y 3-> P N y ' j 3 > h 7 > y 7 J $ raiSiJE^ < “^ ffl/High Voltage Switching Triple Diffused Planar NPN Silicon Transistor • W fi\f';i|3 ]/'D in ie n s io n s U n it: mm

bu 508 df

Contextual Info: SIEMENS BUZ 73 A SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type BUZ 73 A Yds 200 V b 5.5 A flbSion Package Ordering Code 0.6 n TO-220 AB C67078-S1317-A3 Maximum Ratings Parameter Symbol Continuous drain current b Tc = 37 °C

BSW68A 1990

Abstract: bsw68a
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO

Contextual Info: DATA SHEET NEC / ELECTRONDEVICE SILICON TRANSISTOR / _ _ FIM1L4Z M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR M IN I MOLD FEATURES • Resistor B u ilt-in TYPE O'— ' V W — ft. • C o m plem entary to F A 1 L 4 Z a b s o l u t e : m a x im u m

Contextual Info: 2SE D N AMER PHILIPS/DISCRETE bt.53131 0011721 4 • BDT42;A BDT42B;C T -3 3 -*/ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type. P-N-P complements are

2SB75

Abstract: 2sb405 2sb77 d 2SB505 2SB506 2SB77 2SB75 B 2SB77 C 2SB75 C
Contextual Info: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English