2SD79 Search Results

2SD799

Abstract: HIGH VOLTAGE SWITCHING NPN POWER DARLINGTON Darlington NPN Silicon Diode igniter
Contextual Info: Inchange Semiconductor Product Specification 2SD799 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High DC current gain ・DARLINGTON APPLICATIONS ・Igniter applications ・High voltage switching applications PINNING PIN DESCRIPTION 1

2SD792

Contextual Info: SavantIC Semiconductor Product Specification 2SD792 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ·Wide area of safe operation APPLICATIONS ·For line-operated horizontal deflection output applications PINNING see fig.2 PIN

2SD799

Abstract: ie4a
Contextual Info: SavantIC Semiconductor Product Specification 2SD799 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High DC current gain ·DARLINGTON APPLICATIONS ·Igniter applications ·High voltage switching applications PINNING PIN DESCRIPTION 1 Base

2SD798

Contextual Info: SavantIC Semiconductor Product Specification 2SD798 Silicon NPN Power Transistors DESCRIPTION •With TO-220 package ·High voltage ·DARLINGTON APPLICATIONS ·With switching and igniter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base

Contextual Info: TOSHIBA {DI SC RE TE /O PT O} 9097250 TOSHIBA de T| T t m s s G sb ìjòC <D I S C R E T E / O P T O 07790 oodttto D' T-33-31 2SD798 SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER)_ INDUSTRIAL APPLICATIONS. U n i t i n mm IGNITER APPLICATIONS.

2SD794

Abstract: 2SB744 2SB744A 2SD794A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO- 126C FEATURES z z High voltage and Large current capacity Complementary to 2SB744,2SB744A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sC2335

Abstract: 2sc1009 2SC2534 TOSHIBA 2803 2sc2805 2SC1817A 2sc2555 2SC3151 2SC2895 2sc3153
Contextual Info: m s tt Manuf. T y p e No. ÍSS tc 2SC 2788 2SC 2789 « — « ^ $ S^NYO 2SC3040 2SC2555 2SC3277 2SC2650 X 2 X SE X ^ 2SC3151 2 SC 2794 Ä 2 2SD1682 2SC 2796 - ft 2SC 2790A 2SC 2792 2SC 2793 jf 2SC 2797 TOSHIBA 2SC3153 2SD794A & T MATSUS H I T A h m MITSUBISHI

2S0880

Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
Contextual Info: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U

2SD796

Abstract: sds relays
Contextual Info: 2SD796 NPN=Ä^f[7V-^^ TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON HIGH VOLTAGE, SWITCHING ¡SüUÆ» : Outline Drawings Features • High D. C. current gain • t& infU ±A 'ffl£v.' • A S O ^ 'jE t' • S E ftiS tt Low saturation voltage Excellent safe operating area

2SD798

Contextual Info: TO SH IBA 2SD798 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD798 IGNITER APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 10.3MAX High DC Current Gain hp’g ' 1 sn n rivrin ì V. = 9 .v Tr. = 9. a /ì 1.5MAX.

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO-126C FEATURES z z High voltage and Large current capacity Complementary to 2SB744,2SB744A 1. EMITTER 123 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD797-Y

Abstract: 2SD797Y
Contextual Info: 2SD797Y Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) @I(B) (A) (Test Condition)

2SD799

Contextual Info: TO SH IBA 2SD799 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD799 IGNITER APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH VOLTAGE SWITCHING APPLICATIONS • High DC Current Gain * “FE = 600 Min. ( V c e = 2 V > IC = 2 A ) Monolithic Construction with Built-In Base-Emitter Shunt

2SD798

Abstract: POWER TRANSISTORS 600v
Contextual Info: Inchange Semiconductor Product Specification 2SD798 Silicon NPN Power Transistors DESCRIPTION ・With TO-220 package ・High voltage ・DARLINGTON APPLICATIONS ・With switching and igniter applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SD796

Abstract: 2SD79 electronic schematic
Contextual Info: 2SD796 FUJI POWER TRANSISTOR ＮＰＮ三重拡散プレーナ形 ハイパワーダーリントン TRIPLE DIFFUSED PLANER TYPE HIGH POWER DARLINGTON 高耐圧高速スイッチング用 HIGH VOLTAGE,HIGH SPEED SWITCHING 外形寸法 : Outline Drawings

2SD811 TOSHIBA

Abstract: 2SC510 2SD2061 2SD877 RY 228 2SD2023 2SD1270 2SD880 2SC2120 2SD867
Contextual Info: * * * * * * i * * * * * * * * * * * * * * * M anuf. a m. X 3E •y-y'ry y-y'ry ■v-yry ■y-yry ■y-yírv yyry € h SANYO 2SD313 2SD313 n jft ^ TOSHIBA 2SC2120 2SD880 2SD880 2SC510 2SC510 2SC510 2SD877 2SD877 2SD877 NEC 2SD795 2SD795 M AL HITACHI 2SC1213

2SD794

Abstract: 2SD794A
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD794 2SD794A DESCRIPTION •With TO-126 package ·Complement to type 2SB744/744A ·High current 3A ·Excellent hFE linearity APPLICATIONS ·For use in audio frequency amplifier and general purpose applications

2SD794

Abstract: 2SB744 B 15A 45V transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB744 DESCRIPTION •High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage: V BR CEO= -45V(Min) ·Complement to Type 2SD794 APPLICATIONS ·Designed for use in audio frequency amplifier.

2SD797

Abstract: 2s0797
Contextual Info: 2SD797 SILICON NPN TRIPLE DIFFUSED TYPE INDUSTRIAL APPLICATIONS Unit in HGIH POWER AMPLIFIER APPLICATIONS. HIGH POWER SWITCHING APPLICATIONS. DC-DC CONVERTER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES : • High Power Dissipation PC=200W Tc=25°C ' High Collector Current

2SD799

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD799 INDUSTRIAL APPLICATIONS Unit in IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. ] ll3MAXjr. üz.e+0.2 FEATURES: • High DC Current Gain : hFE=600(Min.)(VCE=2V,IC=2A) • Monolithic Construction with Built-In BaseEmitter Shunt Resistor.

2SB744

Abstract: 2SB744A
Contextual Info: Inchange Semiconductor Product Specification 2SB744 2SB744A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD794/794A ・Excellent hFE linearity APPLICATIONS ・For audio frequency power amplifier applications PINNING

2SD798

Abstract: toshiba TLX
Contextual Info: TOSHIBA 2SD798 V V=1 > NPNHfiffiitffê # - V> h > 2SD798 o -f o ¡SjltEE^ -f 7 51 > íñ X : mm ^ / : hFE = 1 5 0 0 (ft/h ( V c E = 2V , I e = 2A ) & ft± Æ fê (T a = 25°C) ijr @ p2 77 /E _ â i â £ ïd V : W ä to irf fH #r , i a u 9 ^ ^ - X fkl Ü J±

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO- 126C FEATURES z z High Voltage and Large Current Capacity Complementary to 2SB744,2SB744A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

92-0151

Abstract: 2SB744 2SB744 nec 2SD794 TI31 S405A 2SB744A 2SD794A T460 1444A
Contextual Info: NEC NEC NEC C om plem entary Pair T ransistor Series f 2SB744,744A/2SD794,794A PN P/N PN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o m h & 1 ]5 ü w « t /•’; is - o u t f f l r K7>r - r ^ u j a i T- *> »>, o / J^ ífí, Í2 ( R, = 8