TFK 082
Abstract: J1 TRANSISTOR
Contextual Info: ß tfk c m 1 m a n A M P com pany Wireless Bipolar Power Transistor, 12W PH1617-12N 1.6-1.7 GHz y/b Features £4 /7 '25 • • • • • • • ( 18 . 4 2 ) NPN Silicon M icrow ave P ow er T ran sisto r D esigned fo r L inear A m plifier A pplications
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ph1617-12ntt50mtfk 082j1 transistor |
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TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Contextual Info: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
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tfk 680 cny 707447nbtp-128-400itt tca 700 y+6btp 128 55074151nkatalog cemisfc2741dc4byp250-400tfk 227
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MMBD2104
Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a
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bas32bas45bav105ll4148+15ll4448bb241bb249ll914ll4150mmbd2104transistor nec 05fhp2835 diodezener diode t2dwhat is the equivalent of ztx 458 transistormmbd2103t2d diode 3wt2d 8n2n2222 as equivalent for bfr96mmbf4932
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MMBD2103
Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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bzv49bzv55500mwbas32+16bas45bav105ll4148ll4448bb241bb249mmbd2103zener diode t2dmmbd2101mmbd2102mmbd2104smd codesbc107 transistor smd code package sot23transistor nec 05fbat15-115snds358n
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SMD Codes
Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.
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bzv49bzv55500mwbas32+16bas45bav105ll4148ll4448bb241bb249smd codestransistor smd t1pmmbd2104baw92smd transistor a6aschottky diode s6 81aa4s smd transistortransistor smd a7stransistor smd p2fmmbd2101
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TFK 450 B2
Abstract: tfk bcy 59 TFK 79 tfk bcy 58 BCY79 BCY790 75558 BCY78 BCY 59
Contextual Info: BCY 78 • BCY 79 'W Silizium-PNP-Epitaxial-Planar-Transistoren Silicon PNP Epitaxial Planar Transistors Anwendungen: Allgem ein und NF-Verstärker Applications: General and AF am plifiers Besondere Merkmale: Features: • Verlustleistung 1 W • Power dissipation 1 W
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tfk 450 b2tfk bcy 59tfk 79tfk bcy 58+5bcy79bcy79075558bcy78bcy 59
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TFK diodes
Abstract: TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83
Contextual Info: VISHAY Vishay Semiconductors Tape and Reel Standards IR Emitters Vishay Semiconductors offers T-1 3 mm and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC publication 286, taking into account the industrial requirements for automatic insertion.
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t-13/414-aug-03tfk diodestfk 03 diodes+8tfk bpw 83ir diodes tfk 4ir diodes tfk bpw 41 nvishay date code tantaltfk s 220tfk bpw 24tfk bpw 752.5/tfk bpw 83
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2cy172cy182cy192cy20+122cy21500ma2n2222a 338tfk 9492n1167halbleiter index transistorad161bsy19al103ac128tfk 404tfk 931
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TFK diodes BYW 76
Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
Contextual Info: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35
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tfk diodes byw 7613009 jt 43byw 56 equivalenttfk diodes 148+6tfk u 264tfk 804tfk 421diode byw 60diode byt 45 jbyt 45 j
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smd code book
Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
Contextual Info: The SMD Code Book 1st character of code 0123456789 ABCDEFGHI JKLMNOPQ R STUVWXYZ Bases The SMD Codebook R P Blackwell, GM4PMK To look up a coded device, click on the first character of the device code in the table on the left. A-F G-K L-P Q-V W-Z AQ-FQ GQ-LQ
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od-80od123/323ot-23ot346+16ot-323ot-416ot-223ot-89ot-143ot-363smd code booktransistor smd p1fmarking code w16 smd transistortransistor smd marking code jgsmd transistor ww1transistor smd a7sdiode smd l4wsmd diode zener code pj 78smd transistor wv4motorola transistor smd marking codes
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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Tfk 880
Contextual Info: CUSTOM POW ER TRANSFO RM ERS TRANSFORMERS FOR SWITCHING POWER SUPPLIES W Utilizes latest core materials and shape factor to provide smallest possible volume and minimum PC board footprint for effective manufacturing cost reduction. These transform ers are available in standard size /power rating from 25 to 880
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20khz-300khzratings-70200vaatings-70+4300va000vac3500vactfk 880
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BF314
Abstract: tfk 248 TFK 29 16go TFK 4 314 TFK 450 ic251 TFK 175 TRANSISTOR K 314 BF 251
Contextual Info: BF 314 'W Silizium-NPN-Epitaxial-Planar-HF-Transistor Silicon NPN Epitaxial Planar RF Transistor Anwendungen: VHF-Eingangsstufen in Basisschaltung Applications: VHF input stages in com m on base configuration Besondere Merkmale: Feafures: • Kleine R ückwirkungskapazität
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bf314tfk 248tfk 2916go+6tfk 4 314tfk 450ic251tfk 175transistor k 314bf 251
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rjr ce
Abstract: BD170 Scans-0010668 BD 166, 168, 170 bd166 JEDECTO126 BD169 BD - 100 V
Contextual Info: BD166 • BD168 • BD170 Silicon PNP Epitaxial Planar Power Transistors Anwendungen: Allgemein im NF-Bereich Applications: General in AF-range Besondere Merkmale: • Verlustleistung 20 W Features: • Power dissipation 20 W
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n125a150ma500marjr ce+7bd170scans-0010668bd 166, 168, 170bd166jedecto126bd169bd - 100 v
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c 337 25
Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200
Contextual Info: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt
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c 337 25npn 337bc 170 cbc 337+6bc 170bc338bc337bc 338npn bc 337af200
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MZMA
Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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dbc10gdbf10edbf20bdbf20c+11dbf20edd25f-20dd25f-40dd25f-60dd25f-80dd30gb-40mzmadbf20gdbf20tcdbf20tedbf20tg
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MZMA
Abstract: OC 170 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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dbc10gdbf10edbf20bdbf20c+11dbf20edd25f-20dd25f-40dd25f-60dd25f-80dd30gb-40mzmaoc 170dbf20gdbf20tcdbf20te
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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transistor 2n4st25c transistor2n407 transistor2sa114+6tfk 808transistor 2sc124sf1222ge2 transistortfk 877tfk 748
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DIN 50014
Abstract: CQY80
Contextual Info: Optoelektronisches Koppelelement Optically Coupled Isolator Aufbau C o n stru ctio n Emitter: D etektor: GaAs-Lumineszenzdiode Silizium-NPN-Epitaxial-Planar-Fototransistor Anwendungen: Galvanische Trennung von Stromkreisen, rückwirkungsfreier Schalter A p p lic a tio n s :
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din 50014cqy80 |
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MZMA
Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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dbc10gdbf10edbf20bdbf20c+11dbf20edd25f-20dd25f-40dd25f-60dd25f-80dd30gb-40mzmadbf20gdbf20tcdbf20tedbf20tg
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E80276
Contextual Info: TM200DZ/CZ/PZ-M,-H,-24,-2H ffl ü N c fij . 3-48 m 30159 m io m it TM200DZ/CZ/PZ-M,-H,-24,-2H m ± im IE 4Î V rrm V rsm V r dc V drm V dsm V d ( dc) fE •§• It ( rms) It ( av ) Itsm l?t d i/d t Pgm Pg ( av ) V fgm V rgm Ifgm Tj Tstg Viso - m g fc J -*# # à S U ÎW Œ
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tm200dz/cz/pz-me80276e80271 |
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EFT 373
Abstract: D25F10 DBF20E dbf40b DBF40TC DBC10G DBF10E DBF20B DBF20C DBF20G
Contextual Info: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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dbc10gdbf10edbf20bdbf20c+11dbf20edd25f-60dd25f-80dd30gb-40dd30gb-80dd30hb-120eft 373d25f10dbf40bdbf40tcdbf20g
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SGLA36AT0600
Abstract: SGHA36AT0600 GE TFK Breakers SELA36AT0100 SGHA36AT0400 TFK4 Cable GEH-5591 SKHA36AT1200 skla36at0800 sfla36at0250
Contextual Info: Molded Case Circuit Breakers Molded Case Circuit Breakers – Features .3-2 Spectra RMS Circuit Breakers with MicroVersaTrip Plus Trip Units – Features .3-3 Molded Case Circuit Breakers – Quick Reference Guide .3-4
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480/277vsgla36at0600sgha36at0600ge tfk breakers+7sela36at0100sgha36at0400tfk4 cablegeh-5591skha36at1200skla36at0800sfla36at0250
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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rca h 5412t3122n2654as218 transistor+6gex 74adiode germanium 1n283k3004tfk diodeac132ti-483
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