NPN 337 Search Results

NPN 337 Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
MX0912B251Y	Rochester Electronics LLC	MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die)
CA3083Z-G	Rochester Electronics LLC	CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY
CA3046	Rochester Electronics LLC	RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN
ISL73096EHVF	Renesas Electronics Corporation	Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays

NPN 337 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
C 337-25 Abstract: C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338 Text: BC 337 / BC 338 NPN General Purpose Transistors Si-Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0	Original	PDF	UL94V-0 BC337-40 BC338-40 C 337-25 C 33725 12 v transistors 337 c 337 25 npn bc 337 CBC337 transistors bc 337 OF IC 337 NPN 337 BC-338
OF IC 337 Abstract: c 337 25 cbc338 CBC337 NPN 337 transistor BC 338 BC 337 npn bc 337 12 v transistors 337 basisstrom Text: BC 337 / BC 338 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert	Original	PDF	UL94V-0 OF IC 337 c 337 25 cbc338 CBC337 NPN 337 transistor BC 338 BC 337 npn bc 337 12 v transistors 337 basisstrom
NPN 337 Abstract: No abstract text available Text: BC 337 / BC 338 NPN Silicon Epitaxial PlanarTransistors NPN Power dissipation – Verlustleistung 625 mW Plastic case Kunststoffgehäuse TO-92 10D3 Weight approx. – Gewicht ca. 0.18 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert	Original	PDF	UL94V-0 tter\Transistoren\bc337-338 NPN 337
GH1-237QG Abstract: GH1-237QH GH1-237QK GH1-237QX GH1-337QA GH1-337QB GH1-337QD GH1-337QE GH1-437QC GH1-437QF Text: 页码，1/1 GH1电感式接近开关 37 37 5 外形编号检测距离Sn[mm] 具备型号 NPN 常开 GH1-337QA NPN 常闭 GH1-337QB NPN 一开一闭 GH1-437QC DC PNP 常开型 PNP 常闭 GH1-337QD GH1-337QE PNP 一开一闭 GH1-437QF 二线制常开	Original	PDF	GH1-337QB GH1-337QA GH1-437QC GH1-337QD GH1-337QE GH1-437QF GH1-237QG GH1-237QH GH1-237QK GH1-237QX GH1-237QG GH1-237QH GH1-237QK GH1-237QX GH1-337QA GH1-337QB GH1-337QD GH1-337QE GH1-437QC GH1-437QF
993 395 pnp npn Abstract: bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page General purpose amplification and switching transistors Low-power transistors 2 5 – 23 26 Transistor arrays 7 – 29 29 29 Medium-power transistors 8 9 – 30 31 10	Original	PDF	BRY61 BRY62 OT143B 993 395 pnp npn bc237 smd sot23 package transistor TO-92 bc108 TRANSISTOR BC337 SMD 702 TRANSISTOR smd SOT23 2PB601AQ BC548 TRANSISTOR SMD bc548 TO-92 Bd135 smd 2PC945Q
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MMBT3904WT1 PNP MMBT3906WT1 General Purpose Transistors NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount	Original	PDF	323/SC MMBT3904WT1 MMBT3906WT1 MMBT3906WT1
45h8 Abstract: No abstract text available Text: D44H Series NPN , D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as general purpose power amplification and switching such as output or driver stages in applications such as switching regulators,	Original	PDF	D44H8, D45H8 D44H11, D45H11 45h8
FT5769M Abstract: NPN 337 FT5764M FT5755M FT5753M FT5756M ft5760m PNP DARLINGTON ARRAYS FT5754 FT5754M Text: Section 3 Darlington Transistor Arrays — A t a Glance Maximum Ratings V c e o V lc(A> Pag« D v lC C aa«(n«) Polarity 3 -9 FT5753M FT5756M R M -£ 5 NPN NPN 100 100 ±1.5 ±1-5 3-11 FT5754M FT5757M R M -6 5 NPN NPN 100 100 ±3 ±3 3-13 FT5755M FT5750M	OCR Scan	PDF	FT5753M FT5756M FT5754M FT5757M FT5755M FT5750M FT5759M FT5760M FT5761M FT5763M FT5769M NPN 337 FT5764M PNP DARLINGTON ARRAYS FT5754
c 337 25 Abstract: NPN 337 bc 170 c BC 337 bc 170 BC338 bc337 bc 338 npn bc 337 AF200 Text: BC 337 * BC 338 Silizium-NPN-Epitaxial-Planar-NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: T reiber und Endstufen Applications: D river and p o w e r stages Features: Besondere Merkmale: • Verlustleistung 625 mW • In G ruppen so rtie rt	OCR Scan	PDF
TRANSISTOR BC 448 smd Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors	OCR Scan	PDF	BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
BC337 Abstract: BC338 BC327 BC328 BC337 hfe PNP BC327 Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS CASE TO-92F THE BC337 » BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AP DRIVER AND OUTPUT STAGES, AS WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,	OCR Scan	PDF	BC337, BC338 BC327, BC328 O-92F BC337 625mW BC327 BC337 hfe PNP BC327
BC358 Abstract: BC327 BC328 BC337 BC338 Text: BC 337 BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 1 . CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS: WELL AS FOR UNIVERSAL APPLICATIONS. THE BC357, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,	OCR Scan	PDF	BC337, BC338 BC327, BC328 O-92F BC337 625mW BC358 BC327
Untitled Abstract: No abstract text available Text: BC 337 • BC 338 NPN SILICON AP MEDIUM POWER TRANSISTORS 11 _ 1 CASE TO-92F THE BC337» BC338 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF DRIVER AND OUTPUT STAGES, AS; WELL AS FOR UNIVERSAL APPLICATIONS. THE BC337, BC338 ARE COMPLEMENTARY TO THE PNP TYPE BC327,	OCR Scan	PDF	BC337» BC338 BC337, BC327, BC328 O-92F BC337 625mW
639 TRANSISTOR PNP Abstract: transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m so n -csf Case ^ ^ ^ 1 0 92 Polarity NPN PNP NPN CB-1% PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	PDF	BCW94 CB-76 639 TRANSISTOR PNP transistor ESM 692 NPN 337 esm 2907 pnp transistor npn 2222 transistor transistor C 548 B BC516 E C B BC 635 TRANSISTOR BC 557 PNP TRANSISTOR transistor bf 422 NPN

TRANSISTOR BC 213 Abstract: TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	PDF	BCW94 CB-76 TRANSISTOR BC 213 TRANSISTOR BC 181 bf 239 BF 212 transistor transistor bf 184 BF 184 NPN transistor TRANSISTOR BC 212 TRANSISTOR BC 174 transistor BC 338 BF 184 transistor
transistor Bc 540 Abstract: transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310 Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique tho m so n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	PDF	BCW94 transistor Bc 540 transistor BC 341-6 transistor BC 660 transistor 3702 transistor 3707 transistor 2n 2222 transistor Bc 7 NPN transistor 2n 3904 transistors BC 225 transistor BC 310
transistor bc 488 Abstract: transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B Text: t h o m s o n -c s f general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A «0,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	PDF	BCW94 BC317P. transistor bc 488 transistor bc 557 c bc 547 b transistor TRANSISTOR C 557 B TRANSISTOR BC 550 b transistor BC 490 C 547 B pin configuration bc 547 transistor transistor BC 557 transistor C 548 B
transistor BC 310 Abstract: transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor Text: general purpose transistor selector guide — plastic case guide de sélection transistors usage général — boîtier plastique th o m s o n -c s f Case ^ ^ ^ 1 0 Polarity 92 CB-1% NPN PNP NPN PNP NPN 0,8.1 A 0,4.0,6 A « 0 ,2 A PNP v CEO 20 V B Ç 2 3 8 .	OCR Scan	PDF	BCW94 CB-76 BC317P. transistor BC 310 transistor bc 487 transistor BC 321 TRANSISTOR BC 416 b pnp bc 337-25 transistor TRANSISTOR BC 415 transistor bc 318 transistor BC 337-25 TRANSISTOR BC 413 bc 337-40 transistor
Transistor 337 Abstract: transistor bc 337 transistor bc 630 c 337 25 transistor 338 BC 337 transistor BC 338 transistors bc 337 NPN 337 337 npn transistor Text: *B C 337 BC 338 NPN SILICON TRANSISTORS, EPITAXIAL PLANAR TRANSISTORS NPN SILIC IU M , PLA N A R E P IT A X IA U X Compì, of BC 327, BC 328 % Preferred device D isp o sitif recommandé The 8C 337 and BC 338 transistors are intended fo r a wide variety o f medium power AF am plifier	OCR Scan	PDF
Mitsubishi databook Abstract: Mitsubishi transistor databook transistor 2sc3379 2SC3379 T-46 transistor npn Epitaxial Silicon zs 35 Text: MITSUBISHI RF POWER TRANSISTOR 2SC 3379 NPN E P IT A X IA L PLANAR TY PE DESCRIPTION OUTLINE DRAWING D im e n s io n s in m m 2 S C 3 3 7 9 is a silicon NPN epitaxial planar typ e transisto r sp e cifi cally designed fo r UHF pow er am plifier applications.	OCR Scan	PDF	2SC3379 Mitsubishi databook Mitsubishi transistor databook transistor 2sc3379 2SC3379 T-46 transistor npn Epitaxial Silicon zs 35
NE24318 Abstract: No abstract text available Text: NPN MEDIUM POWER OSCILLATOR TRANSISTOR NE243 SERIES FEATURES_ DESCRIPTION • HIGH OSCILLATOR POWER OUTPUT: 630 mW TYP at 7.5 GHz The NE243 NPN series transistor is desined for oscillator applications to 10 GHz. Reliable operation is assured by	OCR Scan	PDF	NE243 NE24300 NE243187 NE243188 NE243287 NE243288 NE243499 IS12I NE24318
ic an 6651 Abstract: MPS6652 MPS6601 MPS6602 MPS6651 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Am plifier Transistors NPN MPS6601 M PS6602* PNP MPS6651 MPS6652* COLLECTOR 3 2 BASE PNP NPN 1 EMITTER EMITTER Voltage and current are negative for PNP transistors M AXIMUM RATINGS Symbol Rating C ollector-Em itter Voltage	OCR Scan	PDF	MPS6601/6651 MPS6602/6652 MPS6601 MPS6602* MPS6651 MPS6652* MPS6601/6602 MPS6651/6652 ic an 6651 MPS6652 MPS6602
2SC3544 Abstract: 2sc 792 lt 8232 CT 101 K 104 B 1206 Text: NPN SILICON OSCILLATOR AND MIXER TRANSISTOR NE944 SERIES FEATURES_ DESCRIPTION . LOW COST The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UH F oscillator and mixer applications. It is suitable for automotive keyless entry	OCR Scan	PDF	NE944 2SC3544 2sc 792 lt 8232 CT 101 K 104 B 1206
LA 4440 IC Abstract: L 4440 ic 4440 3TE445 3TX603 BDY15 BDY16 bd 106 case 603 b bd 3055 Text: NPN Silicon Power Transistors NPN Silicon Epitaxial Planar Transistors in SOT-9 SO-55 metal case For l.f. driver and output stages and high power switching Type Maximum Ratings Characteristics at Tlimh ~ 25 °C @ VCE = 2 V fc - 0,5 A @ "^case — 25 °C	OCR Scan	PDF	BDY15 LA 4440 IC L 4440 ic 4440 3TE445 3TX603 BDY16 bd 106 case 603 b bd 3055

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NPN 337 Search Results

NPN 337 Result Highlights (5)

NPN 337 Datasheets Context Search

C 337-25

OF IC 337

NPN 337

GH1-237QG

993 395 pnp npn

Untitled

45h8

FT5769M

c 337 25

TRANSISTOR BC 448 smd

BC337

BC358

Untitled

639 TRANSISTOR PNP

TRANSISTOR BC 213

transistor Bc 540

transistor bc 488

transistor BC 310

Transistor 337

Mitsubishi databook

NE24318

ic an 6651

2SC3544

LA 4440 IC