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    IR diodes TFK 4

    Abstract: TFK 225 tfk 635 TFK diodes tfk 605 TSIP 5200 TFK BPW 41 N IR diodes TFK BPW 41 N tfk smd TFK BPW 20
    Text: 5200 AS12Z (fan-fold packing) BPW 85 AS12 (reel packing) n n Figure 2. Taping code Z: only for , ) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC , boxes. Each reel and each box is marked with labels which contain the following information: - Tfk -T y , of the tape to enable tape insertion. Tensile strength of the tape: ^ 15 N Pulling force in the plane of the tape, at right angles to the reel: ^ 5 N Note: Shipment in fan-fold packages are standard for


    OCR Scan     		PDF T-13/4 IR diodes TFK 4 TFK 225 tfk 635 TFK diodes tfk 605 TSIP 5200 TFK BPW 41 N IR diodes TFK BPW 41 N tfk smd TFK BPW 20

    TFK BPW 41 N

    Abstract: IR diodes TFK BPW 41 N TFK 162 -12 TFK 705 TFK BPW 83 TFK diodes TFK 451 tfk bpw 77 TFK bpw 21 705 TFK
    Text: (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC , . ­ Tfk ­ Type ­ Group ­ Tape code (see figure 153) ­ Production code ­ Quantity Code for taped , 80090 02-02 Tensile strength of the tape: y 15 N Pulling force in the plane of the tape, at right angles to the reel: y 5 N Note: Shipment in fan-fold packages are standard for radial taped devices , shown above. Example: TSAL6200 AS12 (reel packing) or TSAL6200 ASZ (fan-fold packing) BPW 85 AS12


    Original     		PDF T-13/4 TFK BPW 41 N IR diodes TFK BPW 41 N TFK 162 -12 TFK 705 TFK BPW 83 TFK diodes TFK 451 tfk bpw 77 TFK bpw 21 705 TFK

    IR diodes TFK 4

    Abstract: TFK diodes IR diodes TFK BPW 41 N tfk 19 TFK 451 TFK 705 tfk 605 TSAL6200 TFK BPW 41 N TFK 52
    Text: Diodes : anode before cathode Phototransistors: emitter before collector Identification Label: Tfk , ) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC , . ­ Tfk ­ Type ­ Group ­ Tape code (see figure 48) ­ Production code ­ Quantity Code for taped , strength of the tape: y 15 N y Pulling force in the plane of the tape, at right angles to the , above. Example: TSAL6200 AS12 (reel packing) or TSAL6200 ASZ (fan-fold packing) BPW 85 AS12 (reel


    Original     		PDF T-13/4 IR diodes TFK 4 TFK diodes IR diodes TFK BPW 41 N tfk 19 TFK 451 TFK 705 tfk 605 TSAL6200 TFK BPW 41 N TFK 52

    tfk bpw 77

    Abstract: TFK BPW 83 TFK diodes TFK 705 tfk 605 IR diodes TFK 4 TFK 451 TFK BPW 41 N BPW 83 TFK IR diodes TFK BPW 41 N
    Text: Diodes : anode before cathode Phototransistors: emitter before collector Identification Label: Tfk , ) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC , of the tape to enable tape insertion. ­ Tfk ­ Type ­ Group ­ Tape code (see figure 2) ­ , : only for fan­fold packing both polarities Figure 2. Taping code 92 y 15 N Note: Shipment , AS12 (reel packing) or TSIP 5200 AS12Z (fan-fold packing) BPW 85 AS12 (reel packing) TEKS5400­EGZ


    Original     		PDF T-13/4 tfk bpw 77 TFK BPW 83 TFK diodes TFK 705 tfk 605 IR diodes TFK 4 TFK 451 TFK BPW 41 N BPW 83 TFK IR diodes TFK BPW 41 N

    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: BPW 14 N 297 S BPW 16 N 301 S 153 P 395 BPW 17 N 307 S 186 P 399 BPW 20 R 313 S 239 P 403 BPW 21 R 317 S 254 P N 407 BPW 24 R 321 S 268 P 411 BPW 34 325 S 289 P 417 BPW 41 N 329 S 350 P 421 BPW 43 333 S 351 , 65_ 45(>40) 950 100 1000 BPW 41 N * 7.5 65_ 45(> 41 ) 950 100 1000 , near IR silicon photodetectors Silicon photodiodes The physics of silicon detector diodes Properties


    Original     		PDF

    TFK diodes

    Abstract: TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83
    Text: VISHAY Vishay Semiconductors Tape and Reel Standards IR Emitters Vishay Semiconductors offers T-1 (3 mm) and T-13/4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following , contain the following information: ­ Tfk ­ Type ­ Group ­ Tape code (see figure 66) ­ Production code , insertion. Tensile strength of the tape: 15 N Pulling force in the plane of the tape, at right angles to the reel: 5 N Tape varieties Spacing of lead frame A, B, C S: 2.54 mm T: 5.08 mm A


    Original     		PDF T-13/4 14-Aug-03 TFK diodes TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83

    1997 - Photo diode TFK S 186 P

    Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
    Text: . . . . . . . . . . . . . Infrared Emitting Diodes . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . UV, Visible, and Near IR Silicon Photodetectors . . . . . . . . . . . . , (Materials with a bandgap 0.6­1.0 eV) 1) N PHOTO COUPLER P DIODE: radiation sensitive B , ., 950 nm F = Fast, 830 nm S = Side view IR Emitter 8 F F F Internal Classification , effect Io dc output current IR Reverse current, leakage current Current which flows when reverse


    Original     		PDF

    near IR sensors with daylight filter

    Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
    Text: , BPW 41 N , S 186 P, pn diode BPW 21 R BPW 20 R epi-pin diode BPV 23 NF, BPW 82, BPW 83 , Devices IR diodes (GaAs) The forward voltage, VF, is measured either on a curve tracer or statically , correct readings. In the case of GaAs IR diodes , the total radiant output power, Fe, is usually measured , for devices which cannot be measured with IR diodes because of their spectral sensitivity (e.g. BPW21R). This is because these diodes emit only 1/10 of the radiant power of IR diodes and consequently


    Original     		PDF

    near IR sensors with daylight filter

    Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
    Text: S 153 P, BPW 34, . BPW 24 BPV 20 F, BPV 23 F, BPW 41 N , S 186 P, pn diode BPW 21 R BPW 20 , Measurements Emitter Devices IR diodes (GaAs) The forward voltage, VF, is measured either on a curve tracer , give correct readings. In the case of GaAs IR diodes , the total radiant output power, Fe, is usually , of IR diodes and should be chosen carefully. D The radiant intensity, Ie, of the device is , diodes are used as light sources only for devices which cannot be measured with IR diodes because of


    Original     		PDF w10MW) near IR sensors with daylight filter luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector

    S288P

    Abstract: PW20R light dependent resistor circuit U6792 Near - Infrared Emitting Diod es BPW 23 nf photoconductive cells characteristic
    Text: | epi-pin diode BPV 20 F-B PV 23 F, BPW 41 N , S 186 P, BPV 10 F. S 288 P, TFM -Series (with inte grated , from the widening of the space charge region. However, for the pin diodes ( BPW 34/ S153P family I , Light Measurements Emitter Devices IR diodes (GaAs) The forward voltage. Vp. is measured either on a , section " IR diodes (GaAs)'. The luminous intensity, iv of a light emitting diode can be calculated by , duration have great influence on the self-heating of IR diodes and should be chosen carefully. · The


    OCR Scan     		PDF

    BPW 64 photo

    Abstract: BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na
    Text: ) 3.8 52 53 BPW 78B TEFT4300 TEST2600 BPV11F 0.36 15° 0.18 30° 30°/60° ·-" iR ^-:· ^ , Package Type (Ee = 1 m W /cm 2, V R = 5 V) (X = 820 n m ,V R = 10 V) Photo PIN Diodes in Clear , 55° 12 = 50 (>40) 950 100 1000 ( ''nr= A c · v o 41 BPW 24R 0.78 60 (>45 , BPW17N BPW 85A 0.36 40° 1 2 ° 0.14 (>0.07) j./ 1 (>0.5) 0.8 to 2.5 ;*-r- ; E - UrC . . C 47 BPW 85B BPW85C BPW 96A 25° 1.5 to 4 3 to 8 1.5 to 4.5 1 1.5 0 .1


    OCR Scan     		PDF BPW16N BPW17N BPW85C BPW96C BPV11 BPV23FL TESS5400 900nm) BPW 64 photo BPW 64 photo diode 77NB D5100 77nA BPW 56 photo bpx43-5 smd BPW 64 BPW 61 bpw 77na

    1999 - BPW-20R

    Abstract: BPW20 large area quadrant photodiode BPV10NF BPV22NF BPW20R BPW34 BPW46 BPW97 S153P
    Text: , BPW 41 N , S 186 P, TSOP-Series (with integrated amplifier and demodulator) BPV 23 NF, BPW 82, BPW , 105 106 107 108 ­ 3 dB - Bandwidth ( Hz ) Figure 30. BPW 41 -family, bandwidth vs , ) Figure 31. BPW 41 -family, bandwidth vs. reverse bias voltage, parameter: load resistance, l = 950 nm , the chip is displayed in figure 5. p - GaAs : Si Al n - GaAs : Si 94 8200 Infrared emitting diodes (IREDs) can be produced from a range of different III-V compounds. Unlike the elemental


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    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: n n CO 04 3 BPWP 34 - 32 150*/ 150x/ , 0,6 400 - 1150 BPW 34- Tfk 1983 ii PIN CO 32 4 BPP 356 - 32 , -67 0,4 1,5 1 BA 158 - Tfk n n CE 01 3 BA 159 WT-80/CEMI/A-67 1000*/ 0,4 1.5 1 BA 159 - Tfk it ti CE 01 , 401-100 WT-79/CEMI/A-57 100 1 1,1 1N4002 - Tfk n it CE 01 16 BYP 401-200 WT-79/CEMI/A-57 200 1 1,1 1 1N4003 - Tfk n il CE 01 17 BYP 401-400 WT-79/CEMI/A-57 400 1 1,1 1 1N4004 - Tfk » ii CE 01 18 BYP 401-600 WT-79/CEMI/A-57 600 1 1,1 1 1N4005 - Tfk n R CE 01 19 BYP 401-800 WT-79/CEMI/A-57 800 1 1,1 1


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    led 7 segment anode TIL 702

    Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
    Text: B BPW 13 C BPW 14 A BPW 14 B BPW 14 C BPW 16 N BPW 17 N BPW 20 BPW 21 • • BPW 24 BPW 28 BPW 34 BPW 35 BPW 39 A BPW 39 B BPW 40 BPW 41 N BPW 42 BPW 43 BPW 46 BPW 47 BPW 48 BPW , e e lin g d ir e c tio n Designation is attached w ith code GS 08 in case of standard taping for , component is oriented to the bottom of the tape. — D e - r e e li n g d ir e c t io n "O - o , IR-Filter E C T-%, 0 BPW 17 N 1.8, Fig. 7 I BPW 39 A B TO 92 side view. Fig. 8 I


    OCR Scan     		PDF 10x10 led 7 segment anode TIL 702 trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150

    cqx 87

    Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
    Text: BPW 17 N BPW 20 BPW 2 1 0 BPW 24 BPW 28 BPW 34 BPW 35 BPW 39 BPW 40 BPW 41 Y BPW 42 Y BPW , CQX 38 CQX 39 CQX 40 CQX 41 N CQX 42 N CQX 43 N CQX4 6 ▼ C Q X 86 A CQX8 6 K C Q X 87 A , 41 N CQY 72 L CQY 73 N CQY 74 L CQY 75 N CQY 80 0 CQY8 5 N CQY8 6 N CQY8 7 N CQY 98 CQY 99 , plem entary transistors 19 O p to -e le c tro n ic devices Light em itting diodes Red light , 39 CQX 41 N CQX 42 N CQX 43 N CQX 40 BPX 99 24 24 24 24 24 24 Green light LED’s


    OCR Scan     		PDF AA113 AA117 AA119 BAV17 BAV18 BAV19 BAV20 BAV21 cqx 87 germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: MC Roh Roh Roh Roh Roh Roh Roh Mot MC Phi Phi MC Roh Roh Roh Tfk MC Roh Roh Roh Base CX J N N AZ J R , Mot IR Sie Phi Phi Phi Phi Mot IR Phi Phi Phi Phi Sie Sie Roh Mot Phi Phi Phi Phi Phi Phi Phi Zet N , : · · · · 1A BC846A Phi ITT N BC546A 1A FMMT3904 Zet N 2N3904 1A MMBT3904 Mot N 2N3904 1A IRLML2402 IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , Ir jfet MAG max amplifier attenuator anode base cathode common anode common cathode complement drain


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    1995 - BPW41N

    Abstract: bpw41 BPW41N IR DATA bpw photodiode bpw 41
    Text: TELEFUNKEN Semiconductors BPW 41 N Silicon PIN Photodiode Description BPW41N is a high , : 01.09.1994 1 BPW 41 N TELEFUNKEN Semiconductors Absolute Maximum Ratings Tamb = 25_C Parameter , mV/K mA %/K mA deg nm nm W/ Hz ns ns Rev. A1: 01.09.1994 BPW 41 N TELEFUNKEN , BPW 41 N TELEFUNKEN Semiconductors S rel ­ Relative Sensitivity 0° 10 ° 20 ° 30 , Semiconductors BPW 41 N We reserve the right to make changes to improve technical design without further


    Original     		PDF BPW41N D-74025 bpw41 BPW41N IR DATA bpw photodiode bpw 41

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: IR Sie Phi Phi Phi Phi Mot IR Phi Phi Phi Phi Sie Sie C N C C N C N C C C N C C C N N C C C N N N , Tfk Nat Phi Nat Roh Roh Roh Sil Phi Base I I CX I X N X C O AZ N N N C O N N N N N C N N N N N N C O K , : · · · · 1A BC846A Phi ITT N BC546A 1A FMMT3904 Zet N 2N3904 1A MMBT3904 Mot N 2N3904 1A IRLML2402 IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , Ir amplifier attenuator anode base cathode common anode common cathode complement drain dual gate


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: BC846A Phi ITT N BC546A FMMT3904 Zet N 2N3904 MMBT3904 Mot N 2N3904 IRLML2402 IR F n-ch mosfet 20V 0.9A , MC Sil SGS Phi Mot Roh MC Phi Phi MC Mot MC Phi Phi MC Tfk MC Phi Phi Sil Sil SGS Mot Mot Mot Mot Mot Mot Mot Mot Mot Mot Mot Mot Base CX J N N AZ J R M X N AZ N N AZ X AZ N N AZ WQ AZ N N J J R DO DO DO , Base CX I I X A C O X DP N N N A C C O DP N N K A D C O N C C C DP D A A C O D D DQ N DP B B B N DP N A A C O N N A A DP N C Package SOD523 SOD323 SOT143 SOT346 SOT346 SOT89 SOT143 SOT363 SOT416 SOT23


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    08/TBA 2800

    Abstract: TBA 2800
    Text: Characteristics at V3 = 5 V, TA = 25 °C, photo diode BPW 41 , in the circuit Fig. 1 Current Consumption Gain , DIN 41 866 The amplifier II further amplifies the signal, and amplifier III separates the , 14 Input -C D 100 BPW r - TBA 2800 -pos. , transistor Output Low Voltage pins 7 and 8 at I0l = 1.6 mA IR Transmission Range using the S A A 1250 IR , Transmitter Diodes CQY 99 L1 L2 19 - three Transmitter Diodes CQY 99 L3 26 - - m


    OCR Scan     		PDF 50-Hz-modulated 4bfl2711 08/TBA 2800 TBA 2800

    2011 - BPW 40 pin connection in circuit

    Abstract: No abstract text available
    Text: 16.6 24.9 33.2 Time, mSec 41 .5 49.8 100% Load 50% Load 25% Load BIAS Power BPW 2 Series Data , BIAS 2 Watt Power Supply BPW 2 Series Data Sheet Single (Vo) or Dual (Vo & Vr) output BPW 2-08-00, -08-33, -08-50 BPW 2-14-00, -14-33, -14-50 The BPW Power Supply Module is an ideal solution for numerous , 8V, Ir out 160mA max, Io+Ir 250mA* For Vo = 14V, Ir out 70mA max, Io+Ir 143mA* For Vo = 8V, Ir out 250mA max, Io+Ir 250mA* For Vo = 14V, Ir out 83mA max, Io+Ir 143mA* 30 mW typical @ Vin=120 VAC 3000


    Original     		PDF 277VAC BPW 40 pin connection in circuit

    2004 - Q62702-P1602

    Abstract: Q62702-P1790 Q62702-P73
    Text: Photointerrupters IR remote controls Industrial electronics For control and drive circuits BPW 34, BPW 34 S , Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S (R18R) BPW 34 BPW 34 S BPW 34 S (R18R , Kurze Schaltzeit (typ. 20 ns) · DIL-Plastikbauform mit hoher Packungsdichte · BPW 34 S/(R18R , packing density · BPW 34 S/(R18R): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4 , Industrieelektronik · ,Messen/Steuern/Regeln" · · · · Typ Type Bestellnummer Ordering Code BPW 34


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    cqy 17

    Abstract: infrared emitters and detectors opto coupler array DATASHEET npn tr array
    Text: INFRARED DIODES Ga/As-IR-Emitting Diodes in Miniature (T-3/4) Package OPTICAL & ELECTRICAL CHRACTERISTICS , /Ambient +40° +12° p Peak Wavelength VALUE BPW 16N BPW 17N SYMBOL 100mA Rise , Light Current BPW 16N Ee=1mW/cm , =950nm, Vce=5V 2 BPW 17N Collector Emitter Voltage Collector , ON REQUEST. OTHER BOT PRODUCTS LED BARGRAPHS LED CIRCUIT BOARD INDICATORS LED STAND-OFF'S I.R . TRANSMISSIVE SWITCHES I.R.REFLECTIVE SWITCHES CUSTOM I.R . ASSEMBLIES CUT AND POLISHED OPTICAL FIBRE SURFACE


    Original     		PDF SSA-005/2 SSA-005/2 SSA005/2A SSA005/2B SSA005/2C SSA005/2D cqy 17 infrared emitters and detectors opto coupler array DATASHEET npn tr array

    IN5363B

    Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
    Text: . I.R . TOSHIBA TOSHIBA TOSHIBA TOSHIBA TOSHIBA TOSHIBA TOSHIBA TOSHIBA TOSHIBA FAGOR Part N um ber Ì , MOTOROLA MOTO/ TFK MOTOROLA MOTO/ TFK MOTOROIA MOTO/ TFK 396 Cross R eference Com petitor Part N um , ./ I.R . G.I./ I.R . G.I. G.I. G.I./ TFK G.I./ TFK G.I. G.I. G.I. G.I. G.I GI g : GI G.I. G.I. G.I. G.I , ROHM ROHM ROHM ROHM ROHM ROHM ROHM ROHM I.R I.R . IR . I.R . I.R . I.R . I.R . I.R . I.R . I.R . FAGOR Part N um , . I.R . I.R . I.R . I.R I.R I.R I.R . I.R . I.R . IR . IR . I.R . I.R . I.R . I.R . I.R . I.R . FAGOR Part N um ber


    OCR Scan     		PDF 03NH45 05NH46 05NU41 05NU42 0R8GU41 5KE10 5KE10Û 5KE100A 5KE100CA 5KE10CCF IN5363B IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A

    2003 - bpw 104

    Abstract: E9087 Q62702-P1602 Q62702-P1790 Q62702-P73 BPW34S
    Text: Photointerrupters IR remote controls Industrial electronics For control and drive circuits BPW 34, BPW 34 S , Reverse Gullwing BPW 34, BPW 34 S, BPW 34 S (E9087) BPW 34 BPW 34 S BPW 34 S (E9087 , Kurze Schaltzeit (typ. 20 ns) · DIL-Plastikbauform mit hoher Packungsdichte · BPW 34 S/(E9087 , packing density · BPW 34 S/(E9087): suitable for vapor-phase and IR-reflow soldering (JEDEC level 4 , Industrieelektronik · ,Messen/Steuern/Regeln" · · · · Typ Type Bestellnummer Ordering Code BPW 34


    Original     		PDF E9087) bpw 104 E9087 Q62702-P1602 Q62702-P1790 Q62702-P73 BPW34S
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