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    ir diodes tfk 4 Datasheets

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    IR diodes TFK 4

    Abstract: TFK diodes IR diodes TFK BPW 41 N tfk 19 TFK 451 TFK 705 tfk 605 TSAL6200 TFK BPW 41 N TFK 52
    Text: Diodes : anode before cathode Phototransistors: emitter before collector Identification Label: Tfk , Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 (3 mm) and T-13/ 4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC , . ­ Tfk ­ Type ­ Group ­ Tape code (see figure 48) ­ Production code ­ Quantity Code for taped , Reel Package, Dimensions in mm 52 max. 355 90 30 48 45 Identification Label : Tfk


    Original     		PDF T-13/4 IR diodes TFK 4 TFK diodes IR diodes TFK BPW 41 N tfk 19 TFK 451 TFK 705 tfk 605 TSAL6200 TFK BPW 41 N TFK 52

    IR diodes TFK 4

    Abstract: TFK 225 tfk 635 TFK diodes tfk 605 TSIP 5200 TFK BPW 41 N IR diodes TFK BPW 41 N tfk smd TFK BPW 20
    Text: Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 (3 mm) and T-13/ 4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC , boxes. Each reel and each box is marked with labels which contain the following information: - Tfk -T y , ,I 22.5 21.5 0.9 max Figure 4 . Tape dimensions 0 5 mm devices 07.98 71 Vishay Telefunken Reel Package, Dimensions in mm 355 52 max. VISHAY Identification Label : Tfk / Type


    OCR Scan     		PDF T-13/4 IR diodes TFK 4 TFK 225 tfk 635 TFK diodes tfk 605 TSIP 5200 TFK BPW 41 N IR diodes TFK BPW 41 N tfk smd TFK BPW 20

    tfk bpw 77

    Abstract: TFK BPW 83 TFK diodes TFK 705 tfk 605 IR diodes TFK 4 TFK 451 TFK BPW 41 N BPW 83 TFK IR diodes TFK BPW 41 N
    Text: Diodes : anode before cathode Phototransistors: emitter before collector Identification Label: Tfk , Vishay Telefunken Tape and Reel Standards Vishay Telefunken offers T-1 (3 mm) and T-13/ 4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC , of the tape to enable tape insertion. ­ Tfk ­ Type ­ Group ­ Tape code (see figure 2) ­ , 0.9 max 12.9 12.5 Figure 4 . Tape dimensions 5 mm devices 02.00 93 Vishay Telefunken


    Original     		PDF T-13/4 tfk bpw 77 TFK BPW 83 TFK diodes TFK 705 tfk 605 IR diodes TFK 4 TFK 451 TFK BPW 41 N BPW 83 TFK IR diodes TFK BPW 41 N

    TFK BPW 41 N

    Abstract: IR diodes TFK BPW 41 N TFK 162 -12 TFK 705 TFK BPW 83 TFK diodes TFK 451 tfk bpw 77 TFK bpw 21 705 TFK
    Text: Vishay Semiconductors Tape and Reel Standards Vishay Semiconductor offers T-1 (3 mm) and T-13/ 4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following specification is based on IEC , . ­ Tfk ­ Type ­ Group ­ Tape code (see figure 153) ­ Production code ­ Quantity Code for taped , 355 52 max. 90 30 48 45 Identification Label : Tfk / Type / Group / Tape Code / Production Code / Quantity 94 8641oshf Figure 156. Dimensions of the reel Diodes : Anode before


    Original     		PDF T-13/4 TFK BPW 41 N IR diodes TFK BPW 41 N TFK 162 -12 TFK 705 TFK BPW 83 TFK diodes TFK 451 tfk bpw 77 TFK bpw 21 705 TFK

    TFK diodes

    Abstract: TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83
    Text: VISHAY Vishay Semiconductors Tape and Reel Standards IR Emitters Vishay Semiconductors offers T-1 (3 mm) and T-13/ 4 (5 mm) LEDs, IR emitters and detectors packaged on tape. The following , mm 355 52max. 90 30 Identification Label : Tfk /T ype / Group / Tape Code/Production Code / Quantity 48 45 948641 Figure 4 . Dimensions of the reel Diodes : Anode before Cathode , contain the following information: ­ Tfk ­ Type ­ Group ­ Tape code (see figure 66) ­ Production code


    Original     		PDF T-13/4 14-Aug-03 TFK diodes TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83

    IN5363B

    Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
    Text: ./ I.R . G.I./ I.R . G.I. G.I. G.I./ TFK G.I./ TFK G.I. G.I. G.I. G.I. G.I GI g : GI G.I. G.I. G.I. G.I , /SEMI G I./MICR'MOTO/SEMI/THOM THOMSON THOMSON THOMSON THOMSON I.R I.R I.R . I.R . IR . : r. I.R . I.R . I.R . I.R . I.R . I.R . I.R . I.R I.R I.R . IR . :r. I.R . I.R . I.R , I.R , I.R . I.R . I.R I.R . IR . IR . I.R . I.R . I.R . I.R . TOSHIBA TOSHIBA TOSHIBA TOSHIBA TOSHIBA TOSHIBA TOSHIBA TOSHIBA TOSHIBA FAGOR Part N um ber Ì , 1SMZG06GP DF04M 1SMZG06GP DFD6M lSKGGOGGP DF08M EGP10D EGP10D W04F ra ? 0 4 DF04M FUF4004 FUF4004 EGP10G


    OCR Scan     		PDF 03NH45 05NH46 05NU41 05NU42 0R8GU41 5KE10 5KE10Û 5KE100A 5KE100CA 5KE10CCF IN5363B IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A

    SMD Codes

    Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
    Text: IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , Ir jfet MAG max amplifier attenuator anode base cathode common anode common cathode complement drain , signal current gain input drain current gate current reverse leakage current ( diodes ) junction field , ) Toko Inc. Zetex Agi Fch HP Inf ITT MC Mot Nat Nec NJRC ON Phi Roh SGS Sie Sil Tem Tfk Tok Zet , DTC114TE DTC114TUA DTC114TKA MRF5211L Gali- 4 PMSS3904 PMBS3904 Gali- 4 DTC124TE DTC124TUA DTC124TKA


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 SMD Codes TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101

    MMBD2103

    Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
    Text: IR F n-ch mosfet 20V 0.9A This has been a problem in the past, however recently manufacturers have , Ir amplifier attenuator anode base cathode common anode common cathode complement drain dual gate , current gain input drain current gate current reverse leakage current ( diodes ) jfet MAG max min mmic , Phi Roh SGS Sie Sil Tem Tfk Tok Zet Agilent (was HP) Fairchild Hewlett-Packard (Now Agilent , MRF5211L Gali- 4 PMSS3904 Manufacturer Nec Sil Phi Phi MC Sil SGS Phi Mot Roh MC Phi Phi MC Roh Roh Roh Roh


    Original     		PDF BZV49 BZV55 500mW BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 MMBD2103 ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N

    MMBD2104

    Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
    Text: , usually these are 3/ 4 pin devices or RF circuits I'm interested in. How to use the SMD Codebook To , BC846A Phi ITT N BC546A FMMT3904 Zet N 2N3904 MMBT3904 Mot N 2N3904 IRLML2402 IR F n-ch mosfet 20V 0.9A , SO2369R BST82 MRF5711L DTCC114T Gali-2 PDTC143ET PDTC143ET Gali-3 MRF5211L Gali- 4 PMSS3904 PMBS3904 Gali- 4 , MC Sil SGS Phi Mot Roh MC Phi Phi MC Mot MC Phi Phi MC Tfk MC Phi Phi Sil Sil SGS Mot Mot Mot Mot Mot , MMBT2222 Phi Sie Sie Phi Phi Tfk Phi Phi Phi Phi Phi Phi Phi Phi Sil Phi Phi Phi Phi Phi Phi Phi Phi Phi


    Original     		PDF BAS32, BAS45, BAV105 LL4148, LL4448 BB241 BB249 LL914 LL4150, MMBD2104 Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932

    smd code book

    Abstract: transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes
    Text: ) diodes Plastic Melf/miniMelf Coloured SOD123/323 diodes SMD Electrolytics SMD Ceramic Capacitors SMD , -223, SOT-89 SOT-143, SOT-363 Diodes http://www.marsport.org.uk/smd/mainframe.htm (1 of 2)27/5/2007 18:18 , DTC143TKA DTC114TCA DTC114TE DTC114TUA DTC114TKA MRF5211L Gali- 4 PMSS3904 PMBS3904 Manf Base Package Leaded , 0C 0D 0E 0F 0G 0H 0J 0K 0L 0M Gali- 4 DTC124TE DTC124TUA DTC124TKA EDZ10B VDZ10B TSDF1205R Gali , Phi Phi Phi Sie Sie Roh Roh Phi Phi Phi Sie Sie Phi Phi Tfk Phi Phi Phi Vis Vis Phi Phi Phi Rho Rho


    Original     		PDF OD-80 OD123/323 OT-23, OT346 OT-323, OT-416 OT-223, OT-89 OT-143, OT-363 smd code book transistor SMD P1f marking code W16 SMD Transistor TRANSISTOR SMD MARKING CODE jg smd transistor WW1 Transistor SMD a7s DIODE SMD L4W smd diode zener code pj 78 smd transistor wv4 Motorola transistor smd marking codes

    TFK 680 CNY 70

    Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
    Text: /typ obudov^/ 1 2 3 4 5 6 7 8 1 3A 157 WT-80/CEMI/A-67 400x/ 0, 4 1,5 1 BA 157 - Tfk obecnie , -67 0, 4 1,5 1 BA 158 - Tfk n n CE 01 3 BA 159 WT-80/CEMI/A-67 1000*/ 0, 4 1.5 1 BA 159 - Tfk it ti CE 01 , produk- eji czenie 4 5 6 7 8 n-p-n • 45 110 - 480 100 300 150 BC 107 - Tfk obecnie produ , 150 15 125 4 21-16247- RCA n . tt CE 20 29 BD 643 WT-80/CEMI/A-82 n-p-n 45 >750 3. 62,5 1 BD 643- Tfk , n n CO 04 3 BPWP 34 - 32 150*/ 150x/ , 0,6 400 - 1150 BPW 34- Tfk 1983 ii PIN CO 32 4 BPP 356 - 32


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    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: . 4 . 'W i i IFWCCIRQ electronic ry Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 , 10 -0 .0 1 Fig. 4 Diodes Z-Diodes with Pv = 1.3 W Type Notes and case Dimensions see , 0 .2 5 < 0 .1 56 < ± 0 .0 9 8 Pi a h 14 Fig. 4 Diodes Fast Rectifiers -


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    transistor bf 244

    Abstract: BF311 TFK U 2510 B TFK 241 a1241 transistor BF 245 transistor BF 243 tfk 2510 tfk 4 241 TFK 311
    Text: stg 35 25 4 40 3 360 150 V V V mA mA mW °C -55 . +150 B 2/V.2.510/0875 A 1 241 BF 311 , (BR)EBO 4 ^be') 50 nA 780 mV hFE ') 40 79 Dynamische Kenngrößen AC characteristics 'amb 25 , KurzschluB-Eingangsadmlttanz gje 6,1 mS Short circuit input admittance c, 50 pp Kurzschluß-Rückwärtssteilheit I y I 89, 4 , 7 2 016 Tfk , 20 30 mA 7 20 1 t Tfk | | ^CB = 10 V / = 36


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    Photo diode TFK S 186 P

    Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
    Text: near IR silicon photodetectors Silicon photodiodes The physics of silicon detector diodes Properties , TELEFUNKEN Semiconductors 1.2 IR emitters Infrared emitting diodes Package Type Characteristics + , 100 1.4(<1.7) 1 4 (<1 7) 100 100 1.4(<1.8) 100 IR emitter GaAs (950 nm) in , Semiconductors 4 . Physics and technology 4.1 Emitters 4.1.1 Materials Infrared emitting diodes (IREDs , Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission 2. Explanation


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    1997 - Photo diode TFK S 186 P

    Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
    Text: . . . . . . . . . . . . . Infrared Emitting Diodes . . . . . . . . . . . . . . . . . . . . . . . . , . . . . . . . . . . . . . . UV, Visible, and Near IR Silicon Photodetectors . . . . . . . . . . . . , 2 2 4 7 7 8 9 17 18 18 21 31 31 31 36 37 38 38 38 44 47 47 47 49 50 50 51 , ., 950 nm F = Fast, 830 nm S = Side view IR Emitter 8 F F F Internal Classification Package design U 2 = 1.8 mm H 3 = 3 mm I with stand offs F 4 = 3 mm without stand offs 5 = 5 mm


    Original     		PDF

    MS3E800FME

    Abstract: No abstract text available
    Text: · Mobile Cellular. SMR. Data 800/900 MHz Enclosed coil m ini m ag m ount gain antenna w/cable a nd connector Retail pa antenna nclosed coil m ini m ag m ount gain able a nd connector Medium m ag m ount open coil gain antenna w/cable and connector M O D tl MS3E800FME MS3E80QMPL MS 3E 800 TfK MS 3E 900 FME ttS 3E 900 MPL MS M 900 THC V H M GAIN TYPE VSWR COLOR WHIP COAX BASE SIZE POW , WHIP COAX BASE SIZE POWER RATING PUL l STRENGTH MAX HEIGHT IR E Q U E N C Y ¿06-896 MHz 806-896 MHi


    OCR Scan     		PDF MS3E800FME MS3E80QMPL MM3800TNC 90CFME MM39001NC 890-96G RG-174 RG-58A/U

    TFK U 111 B

    Abstract: tfk 114 L200C XL-2000 xl2000 XL200 V/TFK U 111 B
    Text: f t ¡ t £ a éí A. j¡¡ > 4 'f r T f 'l X 't f . fe &£ XL2000-1 S . X ¡&tt Æ XLzooo-1 rt N tfK c s = > 1 - 4 own2 o = > 1,2 Nm C H S ) 0 ,7 5 - 2 ,5 mm* c s oe c s = > II 13 |5 !t l . 1 IT R , e s e g u ir e le o p erazio n i di se g u ito riportate. Su« avviatore XL20Q 01 possono essere , m * C £ = > C Ê = » 1 Nm c i> ~ ' r 02 2/ 4 02/98- AW A 121*1651 02/99 AW A


    OCR Scan     		PDF XL200 XL2000-1 XL2000-1 -NH111 NH111 TFK U 111 B tfk 114 L200C XL-2000 xl2000 V/TFK U 111 B

    TFK um 175

    Abstract: tfk 635
    Text: (5 mm) IR em itters and detectors packaged on tape. The follow ing specifica tion is based on IEC , contain the follow ing inform ation: Tfk Type G roup Tape code ( see figure 49) Production code Quantity , * 19.0 17.5 3.11 0 .9 r 5.78 4 .3 8 2 .5 4 7 .0 5 5 .6 5 12.9 12.5 Figure 50. Tape , ': CS T 1 4 .5 '¿ T X 0.5 0.1 16.5 15.5 i - J* * 9.5 8.5 2_ 1 2 _1 1 22.5 2 1 .5 4 .2 3.8 \ \ 12.3 1 1.7 1 9 .0 17.5 T o o o o TM o ; o cn r


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    sn76447

    Abstract: 7B449 20 TFK diodes
    Text: SN7S446 THRU SN75449 DUAL PERIPHERAL DRIVERS D 2 4 8 1 . DECEMBER 1 9 7 8 -R E V IS E D DECEMBER 1 , ) D OR P P AC KA G E ITO P V IE W ) sC U s Dvcc 1AC 2 7 D 2A 1YC 3 6 U2Y gndQ 4 5 U CLAMP FU N C TIO N TA BLE S SN 76446 (EACH A N D DRIVER) INPUTS A S H X L O U TP U T Y H L L Output Clamp Diodes , diodes on the outputs. Series SN75446 drivers are characterized for operation from 0 °C to 70°C . schem , ts s p e e tfk a tiM i per tfc t te rn s t f Taxes lastram eets standard w a rra n ty . Pre dactbe


    OCR Scan     		PDF SN7S446 SN75449 SN75446 sn76447 7B449 20 TFK diodes

    diode tfk s 220

    Abstract: TFK BP 3 TFK 140 TFK S KJ SMD DIODE MARKING
    Text: j < - i P · mm. tf-k s o a h ^ i 1Switching Regulator 1DC/DC Converter 1Home Appliance, Game , CO cn Ir Cj <9jc f = 1M H z, V r = Junction to case 10V, n m m Thermal , *g«tiSpapiS A < D t«> (cis»f»J 4 U t z m 106 (J532) m tz z ttf& v i t o All specifications are , 4 6 8 10 12 14 16 B e n ts 2 Number of Cycles [cycle] 5 1 0 20 , sine wave is used for measurements. * < £ 6 9 ^ ^ 7 7 ^ ir ^ F o - r is * Sine wave ii 50Hz "C'iHUmL


    OCR Scan     		PDF STO-220 DF10SC4M diode tfk s 220 TFK BP 3 TFK 140 TFK S KJ SMD DIODE MARKING

    diode tfk s 220

    Abstract: TFK 490 tfk 123 7 TFK S
    Text: C o y j < - i P · m m . tf-k s o a h ^ i 1Switching Regulator 1DC/DC Converter 1Home Appliance , I± S fm 7 iW e b ^ -f h x & ( y 4 t - K t f 9 ? - · « « » * * > *#.B3 t^]i#7St;ov , - _ _ ^ p e _ N a DF25SC6M - 4 0 -1 5 0 150 60 -f.fi Unit °C °C V V A A W l) i! i , Reverse Pow er Ifsm P rrsm Electrical Characteristics ( i H®« 4 HMÄEE Forward Voltage Reverse , measurement, Per diode Pulse measurement, Per diode 0.58 10 490 1.6 V mA pF °C/W Ir Vp vR Vpm v


    OCR Scan     		PDF DF25SC6M diode tfk s 220 TFK 490 tfk 123 7 TFK S

    TFK E 1024

    Abstract: No abstract text available
    Text: OEC 7 1992 1Meg X 4 Monolithic DRAM molate MDM41000-80/10/12 Issue 3.1 : D ecem ber 1992 S e m ic o n d u c to r inc. Pin Definition Package Type: 1,048,576 X 4 CMOS High Speed , C 2n 3 0 4 q 5 c c L u r D O Row Access Time of 80,100,120 ns 5 Volt Supply  , 30 30 0 25 0 ns 2,3,11 ns 3, 4 ,11 ns 5.12 ns 5,12 ns 6,12 11 ns ns 11 ns ns ns 7 , value shown. 3. Measured with a load current equivalent to two TTL loads and 10OpF. 4 . Assumes that t


    OCR Scan     		PDF MDM41000-80/10/12 MIL-STD-883 TFK E 1024

    TFK E 1024

    Abstract: TFK 351
    Text: : December 1992 ADVANCE PRODUCT INFORMATION S e m ic o n d u c to r Inc. 4 ,194,304 x 1 CMOS High , GND WE 2 c : 19 Dout RAS 3 c i 18 CAS NC 4 c i 17 NC A10 5 , referenced to RAS Ir h r Refresh Period (1024 Cycles) w Read-Modify-Write Cycle Time ^W RC RAS to WE , ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 2,3 3, 4 6 7 9 13 8 ns ns 3, 4 ,10 ns ns ns ns 11 ns 11 ns ns 13 10 10 10 13 13 13 13 13 M D M 14001-8Â


    OCR Scan     		PDF MDM14001-80/10/12 MIL-STD-883 TFK E 1024 TFK 351

    TFK um 175

    Abstract: TFK Taiwan Semiconductor TFK 175 hal 506
    Text: l=ftM 1R9M v= Ir 2.0 0.75 0.65 O.fiC 0.75 SO '.C 1 1.0 0.77 0.67 0.3*1 0.74 A V mA t iA , \ C ASE TE V P iR A T U R s. f t ) NIJVRFROFCYS FS 4T t/.t-/ FIÔ.3- TYPICAL INSTANTANEOUS FORWARD CHARACTFRISTTICS PFR I FG riG 4 -T V P IC A I R F V F R Ç F CHARACTFRISTTICS P E R LEG , IC N . tfK > V e rs io n : COS


    OCR Scan     		PDF MBR4035PT MBR40100PT O-3P/TO-247AD 260JC/10 TFK um 175 TFK Taiwan Semiconductor TFK 175 hal 506

    bt 13 g

    Abstract: No abstract text available
    Text: 2 5 ° C ) M A X . T E M P . R A T IN G I U L I . D . S T R A N D E D C O P P E R W IR E O N L Y . E , IB D N F I4 - 2 5 0 F IB D N F I4 - 2 0 5 F IB D N F I4 - 2 0 6 F IB D N F I 4 - I8 7 F I B D N F I 4 - I8 8 F I B D N F 1 0 - 2 5 0 F IB TR AN SLU C EN T PART NUM BER PK TAB S IZ E W IR E RANGE AW G , 1 0 .5 - 1 .5 ) 16 - 1 4 1 1 .5 - 2 .5 ) 16- 14 1 1 .5 - 2 .5 ) 16- 14 1 1 .5 - 2 .5 ) 16- 14 1 1 .5 - 2 .5 ) 16- 14 1 1 .5 - 2 .5 ) 12- 10 1 4 .0 - 6 .0 ! D 1M E N S I O N S A * '03 A I.B ) .8 4 (2 1


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