TFK BPW 41 N
Abstract: IR diodes TFK BPW 41 N TFK 162 -12 TFK 705 TFK BPW 83 TFK diodes TFK 451 tfk bpw 77 TFK bpw 21 705 TFK
Text: . Tfk Type Group Tape code (see figure 153) Production code Quantity Code for taped , shown above. Example: TSAL6200 AS12 (reel packing) or TSAL6200 ASZ (fan-fold packing) BPW 85 AS12 , 355 52 max. 90 30 48 45 Identification Label : Tfk / Type / Group / Tape Code , Identification Label: Tfk Type Group Tape Code Production Code Quantity 94 8667 C A B Figure , 5.75 5.25 3.6 3.4 8.3 7.7 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9 0.25 2.05 1.95
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TFK BPW 41 N
IR diodes TFK BPW 41 N
TFK 162 -12
TFK 705
TFK BPW 83
TFK diodes
TFK 451
tfk bpw 77
TFK bpw 21
705 TFK
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IR diodes TFK 4
Abstract: TFK diodes IR diodes TFK BPW 41 N tfk 19 TFK 451 TFK 705 tfk 605 TSAL6200 TFK BPW 41 N TFK 52
Text: . Tfk Type Group Tape code (see figure 48) Production code Quantity Code for taped , above. Example: TSAL6200 AS12 (reel packing) or TSAL6200 ASZ (fan-fold packing) BPW 85 AS12 (reel , Reel Package, Dimensions in mm 52 max. 355 90 30 48 45 Identification Label : Tfk , Diodes: anode before cathode Phototransistors: emitter before collector Identification Label: Tfk , 2.0 4.0 3.6 5.75 5.25 3.6 3.4 8.3 7.7 1.85 1.65 1.6 1.4 4.1 3.9 4.1 3.9
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T-13/4
IR diodes TFK 4
TFK diodes
IR diodes TFK BPW 41 N
tfk 19
TFK 451
TFK 705
tfk 605
TSAL6200
TFK BPW 41 N
TFK 52
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tfk bpw 77
Abstract: TFK BPW 83 TFK diodes TFK 705 tfk 605 IR diodes TFK 4 TFK 451 TFK BPW 41 N BPW 83 TFK IR diodes TFK BPW 41 N
Text: of the tape to enable tape insertion. Tfk Type Group Tape code (see figure 2) , AS12 (reel packing) or TSIP 5200 AS12Z (fan-fold packing) BPW 85 AS12 (reel packing) TEKS5400EGZ , Reel Package, Dimensions in mm 355 52 max. 90 30 48 45 Identification Label : Tfk , Diodes: anode before cathode Phototransistors: emitter before collector Identification Label: Tfk , Figure 8. Blister tape 3.5 3.1 2.2 2.0 4.0 3.6 5.75 5.25 3.6 3.4 8.3 7.7 1.85
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tfk bpw 77
TFK BPW 83
TFK diodes
TFK 705
tfk 605
IR diodes TFK 4
TFK 451
TFK BPW 41 N
BPW 83 TFK
IR diodes TFK BPW 41 N
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TFK diodes
Abstract: TFK 03 diodes TFK BPW 83 IR diodes TFK 4 IR diodes TFK BPW 41 N Vishay DaTE CODE tantal tfk s 220 TFK BPW 24 TFK BPW 75 2.5/TFK BPW 83
Text: contain the following information: Tfk Type Group Tape code (see figure 66) Production code , AS12 (reel packing) or TSAL6200 ASZ (fan-fold packing) BPW 85 AS12 (reel packing) www.vishay.com , mm 355 52max. 90 30 Identification Label : Tfk /T ype / Group / Tape Code/Production , Semiconductors 3.5 3.1 2.2 2.0 4.0 3.6 5.75 5.25 8.3 7.7 3.6 3.4 1.85 1.65 1.6 1.4 , Semiconductors 10.0 9.0 120 ° 4.5 3.5 2.5 1.5 13.00 12.75 63.5 60.5 Identification Label: Tfk
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T-13/4
14-Aug-03
TFK diodes
TFK 03 diodes
TFK BPW 83
IR diodes TFK 4
IR diodes TFK BPW 41 N
Vishay DaTE CODE tantal
tfk s 220
TFK BPW 24
TFK BPW 75
2.5/TFK BPW 83
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Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Text: 82 351 BPW 83 129 135 TSIP 760. 509 289 TSIP 440. TSIP 520. IrDA Evaluation , 100 1000 BPW 83 * 7.5 65_ 50(>41) 870 100 1000 BPV 20 NFL 7.5 65 , 58 59 59 59 TELEFUNKEN Semiconductors 8. Assembly instructions 8.1 8.2 8.3 8.4 , guide 1.1 Alpha-numeric index BPW 97 B BP 104 233 BPV 10 245 BPV 10 F 237 BPV , . 119 TSHF 5400 125, 499 BPV 22 NF BPV 23 F BPV 23 NF 281 285, 507 I BPW 13 293
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IR diodes TFK 4
Abstract: TFK 225 tfk 635 TFK diodes tfk 605 TSIP 5200 TFK BPW 41 N IR diodes TFK BPW 41 N tfk smd TFK BPW 20
Text: boxes. Each reel and each box is marked with labels which contain the following information: - Tfk -T y , 5200 AS12Z (fan-fold packing) BPW 85 AS12 (reel packing) n n Figure 2. Taping code Z: only for , Telefunken Reel Package, Dimensions in mm 355 52 max. VISHAY Identification Label : Tfk / Type , before emitter Identification Label: Tfk Type Group Tape Code Production Code Quantity Tape Feed , L a b e l: Tfk Type Group Tape Code Production Code Quantity 14.4 max. Figure 11. Dimensions of
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T-13/4
IR diodes TFK 4
TFK 225
tfk 635
TFK diodes
tfk 605
TSIP 5200
TFK BPW 41 N
IR diodes TFK BPW 41 N
tfk smd
TFK BPW 20
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TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: 1982 il CE 30 30 BD 644 WT-80/CSMI/A- 83 p-n-p 45 5-750 e 62,5 1 3D 644- Tfk n ti CE 30 2 5 ' , ukladach m.cz. CE 30 32 BD 646 WT-80/CEMI/A- 83 p-n-p 60 >750 8 62,5 1 BD 646 - Tfk n ti CE 30 33 BD 647 WT-80/CEMI/A-82 n-p-n 80 >750 8 62,5 BD b47m- Tfk n « CE 30 34 BD 648 WT-80/CEMI/A- 83 p-n-p 80 , it CE 30 36 BD 650 WT-80/CEMI/A- 83 p-n-p 100 >750 8 62,5 1 BD 650 - Tfk ti H CE 30 2.3. Tranzystory , n n CO 04 3 BPWP 34 - 32 150*/ 150x/ , 0,6 400 - 1150 BPW 34- Tfk 1983 ii PIN CO 32 4 BPP 356 - 32
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1997 - Photo diode TFK S 186 P
Abstract: IR diodes TFK S 186 P TFK S153P TFK BPW 41 N IR diode TFK 186 TFK BPW 20 TFK S 186 P monocrystalline solar cell power crest audio pro 8200 GERMANIUM phototransistor
Text: No file text available
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1995 - BPW83
Abstract: LARGE SURFACE AREA PHOTODIODE filter BPW 61
Text: BPW 83 TELEFUNKEN Semiconductors Silicon PIN Photodiode Description BPW83 is a high speed , Applications High speed photo detector Rev. A1: 01.09.1994 1 BPW 83 TELEFUNKEN Semiconductors , Unit V nA pF pF mV mA mA deg nm nm W/ Hz ns ns Rev. A1: 01.09.1994 BPW 83 , BPW 83 TELEFUNKEN Semiconductors S rel Relative Sensitivity 0° 10 ° 20 ° 30 , : 01.09.1994 TELEFUNKEN Semiconductors BPW 83 We reserve the right to make changes to improve
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BPW83
lpy800nm)
870nm
D-74025
LARGE SURFACE AREA PHOTODIODE filter
BPW 61
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2011 - Not Available
Abstract: No abstract text available
Text: BIAS 1/2 Watt Power Supply BPW 0.5 Series Data Sheet Single (Vo) or Dual (Vo & Vr) output BPW 0.5-08-00, -08-33, -08-50 BPW 0.5-14-00, -15-33, -14-50 The BPW Power Supply Module is an ideal solution , VAC > 500 Khr MTBF BIAS Power BPW 0.5 Series Data Sheet, Page 1 of 3 Revised 01/26/2011 Specifications subject to change www.biaspower.com BIAS 1/2 Watt Power Supply BPW 0.5 Series Data Sheet Single (Vo) or Dual (Vo & Vr) output BPW 0.5-08-00, -08-33, -08-50 BPW 0.5-14-00, -15-33, -14-50 No
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2011 - AT814
Abstract: No abstract text available
Text: 8.3 BPW 4 Series Data Sheet, Page 2 of 3 Revised 08/22/2011 Specifications subject to change , BIAS Power Supply Module BPW 4 Series Data Sheet Single (Vo) or Dual (Vo & Vr) output BPW 4-08-00, -08-33, -08-50 BPW 4-14-00, -14-33, -14-50 BPW 4-24-00 The BPW 4 Power Supply Module is an , only. See V-I curve on page 2 for Vo in constant power range. BPW 4 Series Data Sheet, Page 1 of 3 , BPW 4 Series Data Sheet Single (Vo) or Dual (Vo & Vr) output BPW 4-08-00, -08-33, -08-50 BPW
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AT814
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diode tfk s 220
Abstract: tfk s 220 diode 12A3 rg4 77 diode tfk s 92 TFK diode tfk 3b tfk transistor Tfk 237 TCA 321
Text: Trlpleton Power Transistor TFK 3080 D telefunken electronic [ Preliminary specifications | r , connectable ⢠Triple diffusion technique ⢠Glass passivation Case variations TFK 3080 D TFK 3080 DA Terminal connections TI.2/1997.O888E 2796 Dâ05 275 TELEFUNKEN ELECTRONIC TFK 3080 D 17E D â ÃTSQOTb OOD^bbO T â ALGG T-33-35 Dimensions in mm TFK 3080D à * ur s»i 1 M»>1 1 Vr 1 i i -1- 1 4.1-, f 2rti 1 1 1 1 - 1 î t 3l«wi 3« HI N ii a EI TFK 3080 DA
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S1000
O888E
T0126
15A3DIN
diode tfk s 220
tfk s 220
diode 12A3
rg4 77 diode
tfk s 92
TFK diode
tfk 3b
tfk transistor
Tfk 237
TCA 321
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2011 - Not Available
Abstract: No abstract text available
Text: BIAS 1 Watt Power Supply BPW 1 Series Data Sheet Single (Vo) or Dual (Vo & Vr) output BPW 1-08-00, -08-33, -08-50 BPW 1-14-00, -14-33, -14-50 The BPS Power Supply Module is an ideal solution for numerous , BPW 1 Series Data Sheet, Page 1 of 5 Revised 01/26/2011 Specifications subject to change www.biaspower.com BIAS 1 Watt Power Supply BPW 1 Series Data Sheet Single (Vo) or Dual (Vo & Vr) output BPW 1-08-00, -08-33, -08-50 BPW 1-14-00, -14-33, -14-50 No Load Pow e r VS Input Voltage 150 Input P ower (m
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TFK diode
Abstract: diode tfk TRANSISTOR BC 277 diode s .* tfk tfk 045 TFK 220 transistor bf 244 76 TFK 244 tfk diode 12A3
Text: Trlpleton Power Transistor ⢠i ? â TFK 3080 D telefunken electronic | Preliminary specifications | r , 1 and base 2 connectable ⢠Triple diffusion technique ⢠Gless passivation TFK 3080 D Terminal connections TFK 3080 DA â¢I «tas 5l c li -300 D âKâ ~2000 -M- 100 01 3 b2 c E Bt T1 , TFK 3080 D 17e d â fitsodtb oocìbbo t â algg T-33-35 Dimensions in mm TFK 3080D , tawMMIEWm. II a EI TFK 3080 DA Plastic case Weight max. 30.0 g 276 2797 Bâ06 This Material
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S1000
2/1997-0888E
T0126
15A3DIN
TFK diode
diode tfk
TRANSISTOR BC 277
diode s .* tfk
tfk 045
TFK 220
transistor bf 244
76 TFK
244 tfk
diode 12A3
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diode B14A
Abstract: B14A diode TFK 03 Diode TFK3070D TFK 001 B14A 23 TFK 001 TFK u 269 TFK 03 TFK3070
Text: 00CHb51 1 TFK 3070 D ] NPN Silicon Darlington Power Transistor Applications: ⢠Motor-control (380 , ⢠Base 1 and base 2 connectable ⢠Triple diffusion technique ⢠Glass passivation TFK 3070 D Terminal connections TFK 3070 DA T1,2/1451.0888 E 2788 C-li 267 TELEFUNKEN ELECTRONIC TFK 3070 D 17E , XL TFK 3070D 1 c am 1 »»Ml j ' UJ 1 1 1 -1- *. i â ⢠4». L-. , îm | 1 1 i 1 { t 2&4ui 316 hi MW Fa IT 268 2789 II 1 OlCOil TFK 3070 DA Ptastic case Weight max
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00CHb51
000Rb52
T0126
15A3DIN
diode B14A
B14A diode
TFK 03 Diode
TFK3070D
TFK 001
B14A
23 TFK 001
TFK u 269
TFK 03
TFK3070
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2011 - BPW 40 pin connection in circuit
Abstract: No abstract text available
Text: BIAS 2 Watt Power Supply BPW 2 Series Data Sheet Single (Vo) or Dual (Vo & Vr) output BPW 2-08-00, -08-33, -08-50 BPW 2-14-00, -14-33, -14-50 The BPW Power Supply Module is an ideal solution for numerous , BIAS Power BPW 2 Series Data Sheet, Page 1 of 5 Revised 01/26/2011 Specifications subject to change www.biaspower.com BIAS 2 Watt Power Supply BPW 2 Series Data Sheet Single (Vo) or Dual (Vo & Vr) output BPW 2-08-00, -08-33, -08-50 BPW 2-14-00, -14-33, -14-50 No Load Pow e r VS Input Voltage 150 Input Power (mW
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BPW 40 pin connection in circuit
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2007 - Not Available
Abstract: No abstract text available
Text: Range Lead (Pb) Free Product - RoHS Compliant BPW 21 Wesentliche Merkmale Features â , Typ Type Bestellnummer Ordering Code BPW 21 Q62702P0885 2007-02-12 1 BPW 21 , 5 V VR = 10 mV 2007-02-12 2 BPW 21 Kennwerte (TA = 25 ° C, Normlicht A, T = 2856 K , -W BPW 21 Relative Spectral Sensitivity Srel = f (λ) Photocurrent IP = f (Ev), VR = 5 V , Srel = f (Ï) 2007-02-12 4 Dark Current BPW 21 MaÃzeichnung Package Outlines 1.55
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350nm
820nm
350nm
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Not Available
Abstract: No abstract text available
Text: sichtbaren Spektralbereich Version 1.1 BPW 21 Features: Besondere Merkmale: ⢠Especially , BPW 21 Q62702P0885 2014-01-10 1 Version 1.1 BPW 21 Maximum Ratings (TA = 25 °C , 2.73 x 2.73 mm x mm 0.34 ° A/W Version 1.1 BPW 21 Parameter Symbol Values , Version 1.1 BPW 21 Relative Spectral Sensitivity Relative spektrale Empfindlichkeit Srel = f(Π, Version 1.1 BPW 21 Dark Current Dunkelstrom IR = f(TA), VR = 5 V, E = 0 Capacitance Kapazität
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1995 - bpw 104
Abstract: BPW96 BPW96A BPW96B BPW96C
Text: 8.3 0.7 max 1.5 12.5 12.1 35.7 34.7 1 BPW 96 TELEFUNKEN Semiconductors , BPW 96 TELEFUNKEN Semiconductors Silicon NPN Phototransistor Description BPW96 is a high , 4.5 8 15 mA Rev. A1: 01.09.1994 BPW 96 TELEFUNKEN Semiconductors Typical , l=950nm 1.6 1.4 1.2 1.0 0.8 0.6 0 20 40 60 80 1 BPW 96 A 0.1 VCE=5V l , ( pF ) Ee=1 mW/cm2 BPW 96 B 0.1 Ee Irradiance ( 94 8296 10 BPW 96 B BPW 96 C
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BPW96
D-74025
bpw 104
BPW96A
BPW96B
BPW96C
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tfk 19
Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750
Text: TFK 5070 D IALGà NPN Silicon Darlington Power Transistor Applications: ⢠Motor-control (380 , ⢠Base 1 and base 2 connectable ⢠Triple diffusion technique ⢠Glass passivation TFK 6070 D TFK 5070 DA Terminal connections 4B2 ÃE b2 Bl 0 0 0 Q( T1.2/1453.0888 E 2802 o-ii 281 TELEFUNKEN ELECTRONIC TFK 5070 D 17E D â â^EQOIb OOCHbbb P T-33-35 " IAL6G Dimensions in mm TFK 5070 , rrr SawiriM4 DW&34. 282 2 8 0 3 D-12 E Trn TFK 5070 DA Plastic esse Weight max. 30.0 g
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T0126
15A3DIN
tfk 19
TFK 102
TFK 19 001
TFK 105
5070d
TFK 282
TFK diode
tfk 3b
diode s .* tfk
telefunken ta 750
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1995 - BPW43
Abstract: photodiode bpw 46 BPW 43
Text: TELEFUNKEN Semiconductors BPW 43 Silicon PIN Photodiode Description BPW43 is a very high , 1 BPW 43 TELEFUNKEN Semiconductors Absolute Maximum Ratings Tamb = 25_C Parameter , . A1: 01.09.1994 BPW 43 TELEFUNKEN Semiconductors Typical Characteristics (Tamb = 25_C unless , Wavelength ( nm ) Figure 6 : Relative Spectral Sensitivity vs. Wavelength 3 BPW 43 TELEFUNKEN , drawings according to DIN specifications 94 8090 4 R 2.4 7.75 7.45 1.2 max 8.9 8.3
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BPW43
78mm2
D-74025
photodiode bpw 46
BPW 43
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fototransistor BPW 39
Abstract: fototransistor BPX 81 opto P180 marking s4 diode smt SFH 300-3/4 datasheet OSRAM IR emitter IRL P3596 foto transistor SFH 229 foto sensor
Text: PHOTODETECTORS, OPTICAL SENSORS) 2.2. SMT Photodiodes BP 104 S / BPW 34 S BPW 34 S RG BP 104 FS / BPW 34 FS / BPW 34 FAS BPW 34 FS RG / BPW 34 FAS RG SFH 2400 SFH 2400 FA SFH 2500 SFH 2500 , 4.3. in Miniature Package / Arrays BPX 81 BPX 83 7 SI-FOTODETEKTOREN TYPENÜBERSICHT (S , BPW 33 6. Sehr schnelle PIN-Fotodioden BPX 63 6. High-Speed PIN Photodiodes BPW 34 BPW 34 F / BPW 34 FA / BP 104 F SFH 229 SFH 229 FA SFH 203 / SFH 213 / SFH 214 SFH 203 FA / SFH 213
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EN60825-1
GETY6091
GPLY6899
GPLY6880
fototransistor BPW 39
fototransistor BPX 81
opto P180
marking s4 diode smt
SFH 300-3/4 datasheet
OSRAM IR emitter IRL
P3596
foto transistor
SFH 229
foto sensor
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near IR sensors with daylight filter
Abstract: near IR photodiodes with daylight filter BPW 23 nf Telefunken Phototransistor photodiode application luxmeter Vishay Telefunken Phototransistor pin diodes radiation detector APPLICATION NOTE BpW34 photo voltaic cell BPW34 osram
Text: , BPW 41 N, S 186 P, pn diode BPW 21 R BPW 20 R epi-pin diode BPV 23 NF, BPW 82, BPW 83 , elements. Searching for the right detector diode type The photodiode BPW 20 R is a pn diode based on , 8609 Figure 38. Open circuit voltage vs. irridiance, parameter: dark reverse current, BPW 20 R , photodiode BPW 20 R However, for the pin diodes (BPW34/ S153P family) similar results with shifted time , 2 0 104 94 8616 105 106 107 108 3 dB - Bandwidth ( Hz ) Figure 45. BPW 41
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near IR sensors with daylight filter
Abstract: luxmeter osram BPW20 photoconductive cells characteristic dc voltmeter circuit diagrams photodiode application luxmeter BPW 23 nf application luxmeter short distance measurement ir infrared diode luxmeter detector
Text: R epi-pin diode BPV 23 NF, BPW 82, BPW 83 BPV10NF BPW 34, BPW 46, BPV 10 frequencies , right detector diode type The photodiode BPW 20 R is a pn diode based on rather highly doped n-silicon , ( mW ) Figure 123. Open circuit voltage vs. irridiance, parameter: dark reverse current, BPW 20 R , 129. Switching times vs. wavelength for photodiode BPW 20 R However, for the pin diodes (BPW34 , dB - Bandwidth ( Hz ) Figure 130. BPW 41-family, bandwidth vs. reverse bias voltage, parameter
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w10MW)
near IR sensors with daylight filter
luxmeter osram
BPW20
photoconductive cells characteristic
dc voltmeter circuit diagrams
photodiode application luxmeter
BPW 23 nf
application luxmeter
short distance measurement ir infrared diode
luxmeter detector
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transistor bf 244
Abstract: BF311 TFK U 2510 B TFK 241 a1241 transistor BF 245 transistor BF 243 tfk 2510 tfk 4 241 TFK 311
Text: ° KurzschluÃ-Ausgangsadmittanz g 83 (jS Short circuit output admittance q " -I 2 pF 244 BF 311 245 BF 311 10 10 7 2 016 Tfk , 20 30 mA 7 20 1 t Tfk | | ^CB = 10 V / = 36
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