ST160 Search Results

ST160NF3LL

Abstract: STB160NF3LL ISD 1720
Contextual Info: STB160NF3LL N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE ST160NF3LL • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V <0.003 Ω 160 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE

ST160NF3LL

Abstract: STB160NF3LL ISD 1720
Contextual Info: STB160NF3LL N-CHANNEL 30V - 0.0026 Ω - 160A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA TYPE ST160NF3LL • ■ ■ ■ ■ ■ V DSS RDS on ID 30 V <0.003 Ω 160 A TYPICAL RDS(on) = 0.0026 Ω LOW THRESHOLD DRIVE ULTRA LOW ON-RESISTANCE LOGIC LEVEL DEVICE

ST1609

Abstract: SCM12 LED standard data book electronique
Contextual Info: R Strömungswächter ST1609 83 20 SCM12ABBFPKG/US 41 27 M12x1 72 60 Kompaktbauform 7,7 12 M12 x 1 27 Steckverbindung POTI M12x1 Einsatzbereich M12x1 LED Standard Elektrische Ausführung Ausgangsfunktion DC PNP Schließer / Öffner programmierbar Gehäusewerkstoff Elektronik

st 339

Abstract: st339 diode 937 ke SLOTTED OPTICAL SWITCH for C3 937 ke ST1131-11 KE 34A
Contextual Info: SLOTTED OPTICAL SWITCH op fiE L tm yics H21A1/2/3 SVM BQi MiUIMETERS MAX. MIN. •D 1 - S I ±y _ ^ 3 *1 SECTION X - X~T~ LEAD PROFILE ST?339*01 INCHES MIN, A W .7 11.0 ,422 433 A- 3.0 a? 119 .125 At 3.0 32 .113 125 <8*> b, .SCO .750 .50 NOM. .024 ,030

Contextual Info: HIGH-SPEED AIGaAS SCHMITT TRIGGER OPTOCOUPLERS OPTOELECTRONICS H11N1 H11N2 H11N3 PACKAGE DIMENSIONS DESCRIPTION The H11N series has a medium-to-high speed integrated circuit detector optically coupled to a gallium-aluminumarsenide infrared emitting diode. The output incorporates

Contextual Info: PHOTOFET OPTOCOUPLERS OPTOELECTRONICS H11F1 H11F2 H11F3 The H11F series has a gallium-aluminum-arsenide infrared emitting diode coupled to a symmetrical bilateral silicon photodetector. The detector is electrically isolated from the input and performs like an ideal isolated FET

C1847

Contextual Info: I HIGH-PERFORMANCE AIGaAs PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 1 I I MCT5210 MCT5211 PACKAGE DIMENSIONS DESCRIPTION The MCT-521X are high performance CMOS/LSTTL logic compatible phototransistor type optically coupled isolator products. They are constructed using a very low

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS CQX14, CQX16 DESCRIPTION The CQX14/16 are 940nm LEDs in narrow angle, TO-46 packages. SEATING /fth X. FEATURES ST1332 Good optical to mechanical alignment SYMBOL INCHES MIN. A MILUMETERS MAX. MIN. NOTES Mechanically and wavelength matched to TO-18

MQC3023

Abstract: MOC3020 P
Contextual Info: I NON-ZERO-CROSSING TRIACS OPTOELECTRONI CS MOC3020 MOC3Û21 MOC3Q22 MOC3Q23 PACKAGE DIMENSIONS DESCRIPTION The MOC3020, MOC3021, M003022 and MOC3023 are optically isolated triac driver devices. These devices contain a GaAs infrared emitting diode and a light activated silicon bilateral

STI-430

Abstract: DTS-411 DTS-804 Transistor DTS801 DTS-430 DTS-423 transistor MJ 15024 STI801 DTS-723 transistor st 431
Contextual Info: SEMICONDUCTOR TECHNOLOGY OSE D J fll3bM5fl D G 0 0 2 S b NPN & PNP HIGH VOLTAGE SILICON HIGH POWER TRANSISTORS STI Type ST-13071 ST-13080 ST-13081 ST-13090 ST-13091 Industry Type MJ-13071 MJ-13080 MJ-13081 MJ-13090 MJ-13091 Power Dissipation @25 °C watts

Contextual Info: GaAs INFRARED EMITTING DIODE OPTOELECTRONICS 1N6264 PACKAGE DIMENSIONS DESCRIPTION The 1N6264 is a 940nm LED in a narrow angle, TO-46 package. S E A T IN G g ST1332 G ood optical to m echanical alignm ent SYMBOL INCHES MIN. MAX. A <f>b MILLIMETERS MIN. .255

Contextual Info: EO HERMETIC SILICON PHOTOTRANSISTOR OPTOELECTRONICS L14P1/2 PACKAGE DIMENSIC The L14P series is a silicon phototransister mounted in a narrow angle, TO-18 package. 3 FEATURES SYMBOL INCHES MILLIMETERS MIN. MAX. MIN. MAX. 6.47 A .225 .255 5.71 èb .016 .021

2N5417

Abstract: A 14U UD3008 2N5292 BD263 BD264A CI44 transistor t05 BC412 KIS434
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2N1103

Abstract: 2SC167 2SC166 CK26A CI44 BC412 KIS434 NS435 NS436 NS438
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

2sc113

Abstract: CI44
Contextual Info: SYMBOLS & CODES EXPLAINED IN TYPE No. CROSS-INDEX & TECHNICAL SECTIONS A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol (assigned by D.A.T.A.) is an integral part of the type number (in Type No. Cross Index,

Contextual Info: FQ B GaAs INFRARED EMITTING DIODE wmm* OPTOELECTRONICS CQX15, CQX17 PACKAGE DIMENSIONS DESCRIPTION The CQX15/17 are 940nm LEDs in wide angle, TO-46 packages. SEATING FEATURES Good optical to mechanical alignment SYM BO L IN C H E S MIN. A M ILLIM ETER S MAX.

Contextual Info: csxa PHOTODARUNGTON OPTOCOUPLERS s m E u m s iic s H11B1 H11B2 H11B3 The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodarlington transistor in a dual in-fine package High current transfer ratio H1181 -500% mtn.

Contextual Info: E H PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS 4N25 4N27 4N26 4N28 PACKAGE DIMENSIONS DESCRIPTION The 4N25, 4N26, 4N27, and 4N28 series of optocouplers have an NPN silicon planar phototransistor optically coupled to a gallium arsenide diode. t 1 8-3 6.86

NS437

Abstract: NS435 NS438 A 14U CS3402 2N2222BT ST162t BC412 PT886 TZ7000
Contextual Info: SY M B O L S & C O D ES E X P L A IN E D IN T Y P E No. CROSS-IND EX & T EC H N IC A L SEC T IO N S A \ Indicators of separate manufacturers producing same type number non-JEDEC whose characteristics are not the same. i This manufacturer-identifying symbol

switch H11B

Abstract: optocouplers H11B1 ST1736 H11B2 H11B ST1723
Contextual Info: PHOTODARLINGTON OPTOCOUPLERS B m E u tm M c s H11B1 H11B2 H11B3 PACKAGE DIMENSIONS E&] DESCRIPTION Si [ft The H11B series consists of a gallium arsenide infrared emitting diode, coupled with a silicon photodariington transistor in a dual in-line package.

C1959

Abstract: C1957 transistor c1959 transistor IN5060 diode C1957 St1602 C1958 c1959 Y transistor transistor c1959 in5060
Contextual Info: [*u PHOTO SCR OPTOCOUPLERS OPTOELECTRONICS 4N394N40 DESCRIPTION The 4N39 and 4N40 have a gallium-arsenide infrared emitting diode optically coupled with a light activated silicon controlled rectifier in a dual in-line package. FEATURES & APPLICATIONS High efficiency, low degradation, liquid epitaxial LED

ST-2124

Abstract: ST2122 varistor xf 040 SC160B 3kw triac GE SC160B triac C2079 varistor xf H11AG1 H11AG2
Contextual Info: PHOTOTRANSISTOR OPTOCOUPLERS OPTOELECTRONICS H11AG1 H11AG2 H11AG3 DESCRIPTION PACKAGE DIMENSIONS ft The H11AG series consists of a gallium-aluminumarsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device

st2506

Abstract: CNY36 ST1609 TIP 422 transistor 0302B
Contextual Info: C s O SLOTTED OPTICAL SWITCH OPTO E L E C T R O N I C S CNY36 PACKAGE DIMENSIONS SYMBOL MILLIMETERS MIN. S E C T IO N X - X L E A D P R O F IL E INCHES MIN. MAX. A 10.7 11.0 .422 .433 A, 3.0 3.2 .119 .125 .024 .030 @b 3 MAX. b, .600 .750 .50 NOM. .020 NOM.

ja1238b22h

Abstract: f80em-012ck-0 JF0825S2HN JF0625S1M JA1238S22H JA0925S22H JF0825S1M YW03010012BH YW04010012BM F75EM-024CK-0
Contextual Info: Flat Axial Fan Range Features :Sizes - From 20mm to 254mm sq ● DC Voltages - 5, 12, 24, 48 & 53V ● AC Voltages - 110 & 220V ● ● Long life - Up to 160k hrs MTTF Airflow - up to 850 CFM ● Noise - as low as 13 dBA ● 3rd wire options available ●