S1409 Search Results

Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)

s1409

Abstract: murata REEL label lot number SKY65050-372LF
Contextual Info: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65050-372LF Block Diagram

Contextual Info: SPICE Device Model SiR640ADP www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: SPICE Device Model Si8461DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

UTM ceramic RESISTOR 212-3

Abstract: AD2033 rs 380sh NyQuist 3 axis DAX 3S OP27GN IC BD 540 LYS HTC Desire 816 Dual SIM HTC A5 12SmV cmos cookbook Monsanto 7 segment displays
Contextual Info: General Information ANALOG DEVICES DATA-ACQUISITION DATABOOK 1984 VOLUME I INTEGRATED CIRCUITS Table of Contents Ordering Guide Q Operational Amplifiers Instrumentation & Isolation Amplifiers c Analog Signal Processing Components m a Voltage References Temperature Measurement Components

SKY65050-372LF

Abstract: S1408 S1410 VT47 S1417
Contextual Info: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram

Contextual Info: SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) (Ω) at VGS = 10 V 0.0267 RDS(on) (Ω) at VGS = 4.5 V 0.0290 ID (A) per leg 23 Configuration Dual TrenchFET power MOSFET

Contextual Info: Si2392ADS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) MAX. ID (A) a 0.126 at VGS = 10 V 3.1 0.144 at VGS = 6 V 2.9 0.189 at VGS = 4.5 V 2.6 Qg (TYP.) 2.9 nC SOT-23 (TO-236) • TrenchFET power MOSFET

Contextual Info: SPICE Device Model Si8469DB www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

crimper CT 3508

Abstract: 490-040 1555.N0375.08 g2206 THERMAL Fuse m20 tf 115 c MC3050
Contextual Info: American Electrical, Inc. Full Line Catalog COMPANY HISTORY American Electrical, Inc. was founded in 1997 by Thomas McCormick, former Vice President of Sales for Weidmuller, Inc. The Company concept was born over lunch with fellow associates literally on a napkin.

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

HX8369

Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
Contextual Info: DOC No. HX8369-A00-DS HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver Version 02 October, 2010 HX8369-A00 480RGB x 864 dot, 16.7M color, with internal GRAM, TFT Mobile Single Chip Driver List of Contents October, 2010

Contextual Info: B U R R - B R O W N <i [ OPA689 ] Wideband, High Gain VOLTAGE LIMITING AMPLIFIER APPLICATIONS FEATURES • FAST RECOVERY FROM OVERDRIVE: 2.4ns TRANSIMPEDANCE WITH FAST OVERDRIVE RECOVERY • LIMITING VOLTAGE ACCURACY: ±15mV FAST LIMITING ADC INPUT DRIVER

Contextual Info: SQJ956EP www.vishay.com Vishay Siliconix Automotive Dual N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • 60 RDS(on) (Ω) at VGS = 10 V 0.0267 RDS(on) (Ω) at VGS = 4.5 V 0.0290 ID (A) per leg 23 Configuration Dual TrenchFET power MOSFET

Contextual Info: Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) d 0.0062 at VGS = -10 V -25.3 VDS (V) -30 0.0074 at VGS = -6 V -23.2 0.0092 at VGS = -4.5 V -20.8 Qg (TYP.) 54 nC SO-8 Single D 8 D 7 D 6

s2513

Abstract: MSM 7225 S1709 E146370 S1113 s1716 SLR-16 s2311 sm 314 1040 D1 S2438
Contextual Info: Patent #: P-2631996 Patented Security: International Approvals: UL # E146370 CSA # LR50370-10 VDE # 57986 SEV # 100989 Protection: Material: Rated Temperature: Seal: Resistant to: Up to 70 PSI Polyamide - flame retardant, self-extinguishing nylon with neoprene bushing

SKY65052-372LF

Abstract: S1509 VT47 GRM015 S1408 S1511 S1417 GRM01
Contextual Info: PRELIMINARY DATA SHEET SKY65052-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations • Test instrumentation • LNA for GPS receivers • Satellite receivers Figure 1. SKY65052-372LF Block Diagram

schematic diagram receiver satellite

Abstract: SKY65050-372LF murata REEL label RF TRANSISTOR 2.5 GHZ s parameter S1410 sc-70 package pcb layout schematics power supply satellite receiver VT47 S1408 transistor c9
Contextual Info: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram

Contextual Info: Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) g 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 VDS (V) 200 Qg (TYP.) 34 D 5 D 6 • Low thermal resistance PowerPAK package • 100 % Rg and UIS tested

Contextual Info: Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) g 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 VDS (V) 200 Qg (TYP.) 34 D 5 D 6 • Low thermal resistance PowerPAK package • 100 % Rg and UIS tested

MDM 6600

Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
Contextual Info: No. 9800-OERF-007 Replaces • Remplace • Substituye No. 9800-OERF-005 Dixie Electric Ltd. OEM CROSS REFERENCE GUIDE DE RÉFÉRENCE GUÍA DE REFERENCIA 2007 Index • Índice AGCO .1

S14020G

Abstract: S14025G S14030G S14035G S14045G S14050G S14055G S14060G S14065G S14070G
Contextual Info: S14 SERIES GENERAL PURPOSE LP FILTER STEEPNESS FACTOR 1.40 This range of 7-pole Elliptical Function Low Pass Filters is intended for bandwidth limitation with minimal distortion of the transmitted signal. The filters are corrected for Group Delay distortion over approx. 92% of

SI8821EDB

Contextual Info: Si8821EDB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -30 RDS(on) (Ω) Max. ID (A) a, e 0.128 at VGS = -4.5 V -2.3 0.143 at VGS = -3.7 V -2.1 0.215 at VGS = -2.5 V -1.8 MICRO FOOT 0.8 x 0.8 S 3 xxx xx 5.2 nC

Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.)