S1417 Search Results
S1417 Price and Stock
Amgis Toroids SH50S-1.4-176FIXED IND 176UH 1.4A 140MOHM SMD |
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SH50S-1.4-176 | Cut Tape | 1,173 | 1 |
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Festo DARQ-R-A-S17-S14-17REDUCING SLEEVE |
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DARQ-R-A-S17-S14-17 | Bulk | 10 | 1 |
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Amgis Toroids SWS-1.4-176INDUCTOR 176UH 1.4A 50KHZ SMD |
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SWS-1.4-176 | Reel |
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OMRON Industrial Automation MS4800S-14-1720LIGHT CURTAIN FINGER 14MM |
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MS4800S-14-1720 | Bulk |
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OMRON Industrial Automation MSF4800S-14-1760LIGHT CURTAIN FINGER 14MM |
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MSF4800S-14-1760 | Bulk |
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S1417 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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s1409
Abstract: murata REEL label lot number SKY65050-372LF
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SKY65050-372LF: SC-70 J-STD-020) SKY65050-372LF 200967D s1409 murata REEL label lot number | |
Contextual Info: SPICE Device Model SiS413DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SiS413DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
lm 8446
Abstract: FIN-02231 IR-58001 mt 6680 76S722333
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1258Kurobon-Dong lm 8446 FIN-02231 IR-58001 mt 6680 76S722333 | |
W157
Abstract: mn 6912 bc 5578 Nanjing Micro One Electronics
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SKY65050-372LF
Abstract: S1408 S1410 VT47 S1417
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SKY65050-372LF: SKY65050-372LF 200967E S1408 S1410 VT47 S1417 | |
026135
Abstract: eltron Nanjing Micro One Electronics
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CA95134 026135 eltron Nanjing Micro One Electronics | |
STR 6765
Abstract: kona 132 ir58 a1876 elmwood 3100 CA92123 Viking Tech Corporation b2800 CZ-186-00
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S8534-5 STR 6765 kona 132 ir58 a1876 elmwood 3100 CA92123 Viking Tech Corporation b2800 CZ-186-00 | |
G 1754 diodeContextual Info: SPICE Device Model Si4434DY www.vishay.com Vishay Siliconix N-Channel 250 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si4434DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 G 1754 diode | |
HX8369
Abstract: S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A
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HX8369-A00-DS HX8369-A00 480RGB 285October, HX8369 S1129 Himax 23 PIN TFT MOBILE DISPLAY HX5186-A | |
Contextual Info: SiC620, SiC620A www.vishay.com Vishay Siliconix 60 A VRPower Integrated Power Stage DESCRIPTION FEATURES The SiC620 and SiC620A are integrated power stage solutions optimized for synchronous buck applications to offer high current, high efficiency, and high power density |
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SiC620, SiC620A SiC620 MLP55-31L 2002/95/EC. 2002/95/EC 2011/65/EU. | |
SKY65052-372LF
Abstract: S1509 VT47 GRM015 S1408 S1511 S1417 GRM01
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SKY65052-372LF: SKY65052-372LF 01088A S1509 VT47 GRM015 S1408 S1511 S1417 GRM01 | |
schematic diagram receiver satellite
Abstract: SKY65050-372LF murata REEL label RF TRANSISTOR 2.5 GHZ s parameter S1410 sc-70 package pcb layout schematics power supply satellite receiver VT47 S1408 transistor c9
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SKY65050-372LF: SKY65050-372LF 200967F schematic diagram receiver satellite murata REEL label RF TRANSISTOR 2.5 GHZ s parameter S1410 sc-70 package pcb layout schematics power supply satellite receiver VT47 S1408 transistor c9 | |
Contextual Info: SPICE Device Model SUP53P06-20 www.vishay.com Vishay Siliconix P-Channel 60 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SUP53P06-20 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
MDM 6600
Abstract: mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918
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9800-OERF-007 9800-OERF-005 MDM 6600 mt 1389 de 2061 D nikko AR9344 bosch AL 1115 CV denso alternator 7805/3A bosch al 1450 dv CATERPILLAR 207-1560 ba 4918 | |
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Contextual Info: SPICE Device Model SUP90P06-09L www.vishay.com Vishay Siliconix P-Channel 60 V D-S 175 °C MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SUP90P06-09L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model SUP90N04-3m3P www.vishay.com Vishay Siliconix N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SUP90N04-3m3P 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Contextual Info: SPICE Device Model Si7846DP www.vishay.com Vishay Siliconix N-Channel 150 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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Si7846DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Nanjing Micro One Electronics
Abstract: 186642
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SKY65050-372LFContextual Info: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications x Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations x Test instrumentation x LNA for GPS receivers x Satellite receivers Figure 1. SKY65050-372LF Block Diagram |
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SKY65050-372LF: SKY65050-372LF 200967F | |
ta 8446 cp
Abstract: OVERLAND IC 741 cn utah g 12 r
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35TEL ta 8446 cp OVERLAND IC 741 cn utah g 12 r | |
STR 6765
Abstract: 44202 TEL 721 TEL721
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CA95134 Su34-5 STR 6765 44202 TEL 721 TEL721 | |
SKY65050-372LFContextual Info: DATA SHEET SKY65050-372LF: 0.45-6.0 GHz Low Noise Transistor Applications • Wireless infrastructure: WLAN, WiMAX, broadband, cellular base stations Test instrumentation LNA for GPS receivers Satellite receivers Figure 1. SKY65050-372LF Block Diagram |
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SKY65050-372LF: SC-70 J-STD-020) SKY65050-372LF 200967E | |
Contextual Info: SPICE Device Model SUD20N10-66L www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SUD20N10-66L 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
NL-4823
Abstract: semelec CHEROKEE INTERNATIONAL sunbank corp pr ste 1205 G Samsung Praha SRI Rev 1_0
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1-04-00A NL-4823 semelec CHEROKEE INTERNATIONAL sunbank corp pr ste 1205 G Samsung Praha SRI Rev 1_0 |