SI4434DY Search Results

Contextual Info: New Product Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • PWM-Optimized TrenchFET Power MOSFET • 100 % Rg Tested • Avalanche Tested

Si4434DY

Abstract: Si4434DY-T1-E3 Si4434DY-T1-GE3
Contextual Info: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET

Contextual Info: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET

72562

Contextual Info: Si4434DY Vishay Siliconix New Product N-Channel 250-V D-S MOSFET FEATURES D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested PRODUCT SUMMARY VDS (V) 250 rDS(on) (W) ID (A) 0.155 @ VGS = 10 V 3.0 0.162 @ VGS = 6.0 V 2.9 APPLICATIONS

G 1754 diode

Contextual Info: SPICE Device Model Si4434DY www.vishay.com Vishay Siliconix N-Channel 250 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Si4434DY

Abstract: Si4434DY-T1 72562
Contextual Info: Si4434DY Vishay Siliconix New Product N-Channel 250-V D-S MOSFET FEATURES D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested PRODUCT SUMMARY VDS (V) 250 rDS(on) (W) ID (A) 0.155 @ VGS = 10 V 3.0 0.162 @ VGS = 6.0 V 2.9 APPLICATIONS

Contextual Info: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET

Si4434DY

Contextual Info: SPICE Device Model Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET

Contextual Info: Si4434DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter

74096

Abstract: AN609 Si4434DY
Contextual Info: Si4434DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RrDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • Halogen-free According to IEC 61249-2-21 Definition • PWM-Optimized TrenchFET Power MOSFET

Si4434DY

Contextual Info: SPICE Device Model Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Contextual Info: Si4434DY Vishay Siliconix New Product N-Channel 250-V D-S MOSFET FEATURES D PWM-OptimizedTrenchFETr Power MOSFET D 100% Rg Tested D Avalanche Tested PRODUCT SUMMARY VDS (V) 250 rDS(on) (W) ID (A) 0.155 @ VGS = 10 V 3.0 0.162 @ VGS = 6.0 V 2.9 APPLICATIONS

Si4434DY

Abstract: Si4434DY-T1-E3 V1506
Contextual Info: New Product Si4434DY Vishay Siliconix N-Channel 250-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 250 ID (A) 0.155 at VGS = 10 V 3.0 0.162 at VGS = 6.0 V 2.9 • PWM-Optimized TrenchFET Power MOSFET • 100 % Rg Tested • Avalanche Tested

BS250KL-TR1-E3

Abstract: si6435adq-t1-e3 TP0610KL Si9435BDY-T1-e3ct SI6467BDQ-T1-E3 SI1024X-T1-E3 SI5855DC-T1-E3 SIA411DJ-T1-E3 SUM110P06-07L-E3 D2PAK SI1903DL-T1-E3
Contextual Info: NEW! Siliconix MOSFETs Multiple pinout configurations available, see Digi-Key website for data sheet. Fig. Package VDSS V ID (A) RDS(on) (Ω) Digi-Key Part No. Cut Tape Price Each 1 25 100 Tape and Reel ‡ Qty. Pricing Vishay Part No. Fig. 1 — 1206-8

FSQ510 Equivalent

Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178

q406 transistor

Abstract: SI9120 equivalent Q406 q406 SUM65N20-30 Si3456BDV SPICE Device Model sud*50n025 Si4304DY 0038 tsop Si2325DS
Contextual Info: Power MOSFETS for DC/DC Applications Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585

Diode SOT-23 marking 15d

Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477
Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs

gs 069

Abstract: PowerPACK 1212-8 Si4946BEY Si2314EDS SI4430BDY tsop6 marking 345 TN2404K 1206-8 chipfet layout Si4630DY SUM110N04-04
Contextual Info: N-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no