SIS413DN Search Results
SIS413DN Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIS413DN-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 18A PPAK 1212-8 | Original | 13 |
SIS413DN Price and Stock
Vishay Intertechnologies SIS413DN-T1-GE3MOSFET P-CH 30V 18A PPAK 1212-8 |
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SIS413DN-T1-GE3 | Tape & Reel | 24,000 | 3,000 |
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SIS413DN-T1-GE3 | Tape & Reel | 51,000 | 28 Weeks | 3,000 |
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SIS413DN-T1-GE3 | 11,119 |
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SIS413DN-T1-GE3 | 21,000 | 3,000 |
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| SIS413DN-T1-GE3 | 2,984 | 148 |
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SIS413DN-T1-GE3 | 21,000 | 28 Weeks | 3,000 |
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SIS413DN-T1-GE3 | Tape & Reel | 3,000 |
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| SIS413DN-T1-GE3 | Cut Tape | 1 |
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SIS413DN-T1-GE3 | Reel | 21,000 | 3,000 |
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SIS413DN-T1-GE3 | 9,220 |
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SIS413DN-T1-GE3 | 760 |
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SIS413DN-T1-GE3 | 2,984 | 1 |
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SIS413DN-T1-GE3 | 25 Weeks | 3,000 |
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SIS413DN-T1-GE3 | 29 Weeks | 3,000 |
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SIS413DN-T1-GE3 | 23,000 | 1 |
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Vishay Siliconix SIS413DN-T1-GE3-30V 9.4MOHM@10V -18A P-CH G-III |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS413DN-T1-GE3 | Bulk | 3,000 |
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Vishay Dale SIS413DN-T1-GE3 |
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SIS413DN-T1-GE3 | 191 |
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Vishay Huntington SIS413DN-T1-GE3 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS413DN-T1-GE3 | 21,000 |
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SIS413DN-T1-GE3 | 30,001 |
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SIS413DN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SPICE Device Model SiS413DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SiS413DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiS413DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0094 at VGS = - 10 V - 18d 0.0132 at VGS = - 4.5 V - 18d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization: |
Original |
SiS413DN SiS413DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiS413DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0094 at VGS = - 10 V - 18d 0.0132 at VGS = - 4.5 V - 18d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization: |
Original |
SiS413DN SiS413DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |