SIS407ADN Search Results
SIS407ADN Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SIS407ADN-T1-GE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 20V 18A 1212-8 PPAK | Original | 634.5KB |
SIS407ADN Price and Stock
Vishay Siliconix SIS407ADN-T1-GE3MOSFET P-CH 20V 18A PPAK1212-8 |
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SIS407ADN-T1-GE3 | Cut Tape | 13,421 | 1 |
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Vishay Intertechnologies SIS407ADN-T1-GE3Power MOSFET, P Channel, 20 V, 18 A, 9 mOhm, PowerPAK 1212, 8 Pins, Surface Mount - Tape and Reel (Alt: SIS407ADN-T1-GE3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS407ADN-T1-GE3 | Reel | 19 Weeks | 3,000 |
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SIS407ADN-T1-GE3 | 5,006 |
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SIS407ADN-T1-GE3 | 6,000 | 3,000 |
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SIS407ADN-T1-GE3 | 6,000 | 19 Weeks | 3,000 |
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SIS407ADN-T1-GE3 | Reel | 6,000 |
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SIS407ADN-T1-GE3 | Reel | 12,000 | 3,000 |
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SIS407ADN-T1-GE3 | 21 Weeks | 6,000 |
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SIS407ADN-T1-GE3 | 16,855 |
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SIS407ADN-T1-GE3 | 27,000 | 20 Weeks | 3,000 |
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SIS407ADN-T1-GE3 | 21,000 | 1 |
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SIS407ADN-T1-GE3 | 9,848 |
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Vishay Intertechnologies SIS407ADN-T1-GE3 (TRENCHFET SERIES)Mosfet, P-Ch, 20V, 18A, Powerpak 1212; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:18A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SIS407ADN-T1-GE3 |
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SIS407ADN-T1-GE3 (TRENCHFET SERIES) | Cut Tape | 50 | 1 |
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Vishay Dale SIS407ADN-T1-GE3SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 18A I(D), 20V, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS407ADN-T1-GE3 | 1,988 |
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Vishay Siliconix SIS407ADNT1GE3Small Signal Field-Effect Transistor, 18A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SIS407ADNT1GE3 | 1,035 |
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SIS407ADN Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.) |
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SiS407ADN SiS407ADN-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C |
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SiS407ADN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SiS407ADN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) f, g 0.009 at VGS = -4.5 V -18 0.0122 at VGS = -2.5 V -18 0.0190 at VGS = -1.8 V -18 VDS (V) -20 • TrenchFET power MOSFET Qg (TYP.) |
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SiS407ADN SiS407ADN-T1-GE3electronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 |