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    SI4143DY Search Results

    SI4143DY Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4143DY-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 25.3A 8SO Original PDF 247.24KB
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    SI4143DY Price and Stock

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    Vishay Siliconix SI4143DY-T1-GE3

    MOSFET P-CHANNEL 30V 25.3A 8SO
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    DigiKey () SI4143DY-T1-GE3 Cut Tape 12,645 1
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    SI4143DY-T1-GE3 Reel 12,500 2,500
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    Vishay Intertechnologies SI4143DY-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI4143DY-T1-GE3)
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    Avnet Americas SI4143DY-T1-GE3 Reel 35 Weeks 5,000
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    Mouser Electronics SI4143DY-T1-GE3 130,828
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    Newark () SI4143DY-T1-GE3 Cut Tape 21,012 5
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    EBV Elektronik SI4143DY-T1-GE3 2,500 36 Weeks 2,500
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    Vishay Huntington SI4143DY-T1-GE3

    MOSFET P-CHANNEL 30V 25.3A 8SO
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    Win Source Electronics SI4143DY-T1-GE3 20,139
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    SI4143DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) d 0.0062 at VGS = -10 V -25.3 VDS (V) -30 0.0074 at VGS = -6 V -23.2 0.0092 at VGS = -4.5 V -20.8 Qg (TYP.) 54 nC SO-8 Single D 8 D 7 D 6


    Original     		Si4143DY Si4143DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: Si4143DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		Si4143DY AN609, 2643m 6512m 8170m 4792m 2540m 1945m 5612m 26-Feb-2014 PDF

    Contextual Info: SPICE Device Model Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si4143DY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF