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    SI4143DY Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4143DY-T1-GE3
    		Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CHANNEL 30V 25.3A 8SO Original PDF 247.24KB
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    SI4143DY Price and Stock

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    Vishay Intertechnologies SI4143DY-T1-GE3

    Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -25.3A; Idm: -70A
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    TME SI4143DY-T1-GE3 2,500
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    Avnet Americas SI4143DY-T1-GE3 Tape & Reel 52 Weeks 2,500
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    Arrow Electronics SI4143DY-T1-GE3 65,000 52 Weeks 1
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    Newark () SI4143DY-T1-GE3 Cut Tape 8,611 5
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    Vishay Huntington SI4143DY-T1-GE3

    MOSFET P-CHANNEL 30V 25.3A 8SO
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    Win Source Electronics SI4143DY-T1-GE3 17,022
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    SI4143DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) MAX. ID (A) d 0.0062 at VGS = -10 V -25.3 VDS (V) -30 0.0074 at VGS = -6 V -23.2 0.0092 at VGS = -4.5 V -20.8 Qg (TYP.) 54 nC SO-8 Single D 8 D 7 D 6


    Original     		si4143dysi4143dy-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Contextual Info: Si4143DY_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		si4143dyan6092643m6512m+68170m4792m2540m1945m5612m26-feb-2014 PDF

    Contextual Info: SPICE Device Model Si4143DY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		si4143dy2002/95/ec2011/65/eujs709a+102-oct-12 PDF